Abstract: One embodiment shows a method for producing porous cellulose particles, including: (a) dissolving cellulose diacetate into a solvent to prepare a cellulose diacetate solution; (b) dispersing the cellulose diacetate solution into a medium immiscible with the cellulose diacetate solution to obtain a dispersed system; (c) cooling the dispersed system; (d) adding a poor solvent to the cooled dispersed system to precipitate cellulose diacetate particles; and (e) saponifying the cellulose diacetate particles.

Abstract: One embodiment shows a method for producing porous cellulose particles, including: (a) dissolving cellulose diacetate into a solvent to prepare a cellulose diacetate solution; (b) dispersing the cellulose diacetate solution into a medium immiscible with the cellulose diacetate solution to obtain a dispersed system; (c) cooling the dispersed system; (d) adding a poor solvent to the cooled dispersed system to precipitate cellulose diacetate particles; and (e) saponifying the cellulose diacetate particles.

Abstract: A catalyst for ester production which comprises zirconium oxide, copper, and at least one oxide selected from the group consisting of zinc oxide, chromium oxide, aluminum oxide and silicon oxide, and is obtainable by reducing with hydrogen a catalyst precursor prepared by the reaction of a salt containing at least one of metals constituting the oxides, a zirconium salt and a copper salt with an alkali hydroxide; and a process for producing an ester which comprises bringing either an alcohol or an alcohol and an aldehyde into contact with this catalyst in a gas phase.

Abstract: A catalyst for ester production which comprises zirconium oxide, copper, and at least one oxide selected from the group consisting of zinc oxide, chromium oxide, aluminum oxide and silicon oxide, and is obtainable by reducing with hydrogen a catalyst precursor prepared by the reaction of a salt containing at least one of metals constituting the oxides, a zirconium salt and a copper salt with an alkali hydroxide; and a process for producing an ester which comprises bringing either an alcohol or an alcohol and an aldehyde into contact with this catalyst in a gas phase.

Abstract: The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layer 3 consisting of an epitaxial single crystal layer on the main surface 2 of substrate 1, the channel layer 4 with thickness 1000 ? or less on the drain layer, the source layer 5 consisting of an epitaxial single crystal layer on the channel layer 4, and the insulated-gates 6 and 7 on the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 ? or less is accurately controlled using the molecular layer epitaxial method and the channel layer 4 is grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.

Abstract: The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layer 3 consisting of an epitaxial single crystal layer on the main surface 2 of substrate 1, the channel layer 4 with thickness 1000 ? or less on the drain layer, the source layer 5 consisting of an epitaxial single crystal layer on the channel layer 4, and the insulated-gates 6 and 7 on the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 ? or less is accurately controlled using the molecular layer epitaxial method and the channel layer 4 is grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.

Abstract: A catalyst for ester production which comprises zirconium oxide, copper, and at least one oxide selected from the group consisting of zinc oxide, chromium oxide, aluminum oxide and silicon oxide, and is obtainable by reducing with hydrogen a catalyst precursor prepared by the reaction of a salt containing at least one of metals constituting the oxides, a zirconium salt and a copper salt with an alkali hydroxide; and a process for producing an ester which comprises bringing either an alcohol or an alcohol and an aldehyde into contact with this catalyst in a gas phase.

Abstract: The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layer 3 consisting of an epitaxial single crystal layer on the main surface 2 of substrate 1, the channel layer 4 with thickness 1000 Å or less on the drain layer, the source layer 5 consisting of an epitaxial single crystal layer on the channel layer 4, and the insulated-gates 6 and 7 on the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 Å or less is accurately controlled using the molecular layer epitaxial method and the channel layer 4 is grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.

Abstract: A base catalyst, obtained by formulating at least one alkali metal compound selected from the group consisting of alkoxides, hydroxides and oxides of alkali metals and an alkaline-earth metal oxide in a ratio of “the weight of alkaline metal compound/the weight of alkaline-earth metal oxide”=0.005 to 1, is used in a reaction of an aldehyde to produce a glycol monoester, thereby providing a base catalyst with an improved efficiency which can be applied to aldol reaction or the like and which has high activity to give target product in a high selectivity.

Abstract: A base catalyst, obtained by formulating at least one alkali metal compound selected from the group consisting of alkoxides, hydroxides and oxides of alkali metals and an alkaline-earth metal oxide in a ratio of “the weight of alkaline metal compound/the weight of alkaline-earth metal oxide”=0.005 to 1, is used in a reaction of an aldehyde to produce a glycol monoester, thereby providing a base catalyst with an improved efficiency which can be applied to aldol reaction or the like and which has high activity to give target product in a high selectivity.

Abstract: A semiconductor device includes a substrate crystal of a type for epitaxial growth thereon. The substrate crystal has a (111)A face and a (111)B face. Also provided are at least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition, thereby providing a structure having a source and a drain. A gate side includes the (111)B face of the substrate crystal. A gate insulating layer is deposited by way of epitaxial growth on the gate side according to molecular layer epitaxy. Alternatively, the at least two semiconductor regions may be deposited on the (111)B face of the substrate crystal according to molecular layer epitaxy, and the gate insulating layer may be deposited on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition.

Abstract: An apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gases are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gases are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

Abstract: In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

Abstract: In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The crystal compound gasses and the reaction gas may be overlapped with each other. In a doping method in the above-described epitaxial growth method, the crystal component gasses and the compound gas of dopant are directed onto the substrate crystal and, subsequently, reaction gas, which chemically reacts with the compound gasses, is directed onto the substrate crystal. Also in this case, the reaction gas may be in overlapped relation to the component gas of dopant.

Abstract: A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the substrate crystal according to either metal organic chemical vapor deposition (MO-CVD) or molecular layer epitaxy (MLE), thereby providing a source-drain structure, a gate side formed by etching the semiconductor regions of the source-drain structure, the gate side comprising either a (111)A face or a (111)B face, and a semiconductor region deposited as a gate by way of epitaxial growth on the gate side according to either MO-CVD or MLE.

Abstract: Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.