Patents by Inventor Toru Tajima

Toru Tajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5976626
    Abstract: A method of manufacturing a semiconductor device is provided superior in planarization, crack resistance, and moisture resistance, and with no corrosion in wiring while the manufacturing cost is suppressed without increasing the number of manufacturing steps in forming an interlayer film therein. This method includes the step of forming a silicon oxide film on a substrate so as to cover a first wiring formed with a silicon oxide film therebetween. A thick-film inorganic SOG film is coated on the silicon oxide film, and then a thermal treatment is applied. Next, a silicon oxide film is formed, and a via hole is formed according to a predetermined mask. By carrying out a thermal treatment at the temperature of 150.about.550.degree. C. and at the pressure of not more than 10.sup.-3 Torr with a portion of the thick-film inorganic SOG film exposed at a side surface of the via hole, residual gas such as CO.sub.2, and H.sub.2 O adsorbed to the side surface of the via hole is released.
    Type: Grant
    Filed: August 1, 1996
    Date of Patent: November 2, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Junko Matsubara, Toru Tajima, Shigeru Harada
  • Patent number: 5889330
    Abstract: In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: March 30, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiroyuki Nishimura, Hiroshi Adachi, Etsushi Adachi, Shigeyuki Yamamoto, Shintaro Minami, Shigeru Harada, Toru Tajima, Kimio Hagi
  • Patent number: 5728630
    Abstract: In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
    Type: Grant
    Filed: November 5, 1996
    Date of Patent: March 17, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiroyuki Nishimura, Hiroshi Adachi, Etsushi Adachi, Shigeyuki Yamamoto, Shintaro Minami, Shigeru Harada, Toru Tajima, Kimio Hagi
  • Patent number: 5604380
    Abstract: In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
    Type: Grant
    Filed: March 10, 1995
    Date of Patent: February 18, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiroyuki Nishimura, Hiroshi Adachi, Etsushi Adachi, Shigeyuki Yamamoto, Shintaro Minami, Shigeru Harada, Toru Tajima, Kimio Hagi