Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens to generate electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein: the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along a direction of an optical axis of the microlens.

Abstract: An image sensor having a plurality of pixels along a first direction includes: a first pixel having a first photoelectric conversion unit that generates an electric charge through photoelectric conversion and a reflecting portion disposed at least in a part of an area located in the first direction relative to a center of the first photoelectric conversion unit, which reflects part of light having been transmitted through the first photoelectric conversion unit toward the first photoelectric conversion unit; and a second pixel having a second photoelectric conversion unit that generates an electric charge through photoelectric conversion and a second reflecting portion disposed at least in a part of an area located in a direction opposite from the first direction relative to a center of the second photoelectric conversion unit, which reflects part of light having been transmitted through the second photoelectric conversion unit toward the second photoelectric conversion unit.

Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

Abstract: A polarization property image measurement device includes: a first radiation unit that radiates light beams in different polarization conditions onto a target object after subjecting the light beams to intensity modulation at frequencies different from one another; a light receiving unit including first photoelectric conversion units that photoelectrically convert the light beams having been radiated from the first radiation unit and scattered at the target object in correspondence to each of the different polarization conditions, and second photoelectric conversion units that photoelectrically convert visible light from the target object; and a processor that detects signals individually output from the first photoelectric conversion units at the different frequencies and differentiates each signal from other signals so as to determine an origin of the signal as one of the light beams; and creates an image of the target object based upon signals individually output from the second photoelectric conversion un

Abstract: An image sensor includes a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit, and a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit.

Abstract: An image-capturing element manufacturing method includes: preparing a first substrate having a plurality of pixels that are two-dimensionally continuously arrayed; preparing a second substrate having a plurality of circuit blocks that respectively have connection terminals to a power supply and a reference potential and that are electrically independent from each other, each of the plurality of circuit blocks having at least some of circuits to read out signals from the plurality of pixels; laminating the first substrate and the second substrate to electrically couple the plurality of circuit blocks and the plurality of pixels overlapping therewith; and cutting circuit blocks around at least one of the plurality of circuit blocks and pixels overlapping therewith to form a laminate in which the plurality of pixels are laminated onto the at least one of the plurality of circuit blocks.

Abstract: A polarization property image measurement device includes: a first radiation unit that radiates light beams in different polarization conditions onto a target object after subjecting the light beams to intensity modulation at frequencies different from one another; a light receiving unit including first photoelectric conversion units that photoelectrically convert the light beams having been radiated from the first radiation unit and scattered at the target object in correspondence to each of the different polarization conditions, and second photoelectric conversion units that photoelectrically convert visible light from the target object; and a processor that detects signals individually output from the first photoelectric conversion units at the different frequencies and differentiates each signal from other signals so as to determine an origin of the signal as one of the light beams; and creates an image of the target object based upon signals individually output from the second photoelectric conversion un

Abstract: An image sensor includes: a micro lens; a photoelectric conversion unit that photoelectrically converts light passing through the micro lens and generates electric charge; and a reflecting portion that reflects a portion of light passing through the photoelectric conversion unit in a direction parallel to an optical axis of the micro lens and passing through the photoelectric conversion unit, and in a direction toward the photoelectric conversion unit.

Abstract: An image sensor includes a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit, and a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit.

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light and generates electric charge; a reflection prevention portion that prevents reflection of at least a portion of light passing through the photoelectric conversion unit; and a reflecting portion that reflects a portion of light passing through the photoelectric conversion unit toward the photoelectric conversion unit.

Abstract: A failure diagnostic device for performing a failure diagnosis on a multi-axis robot includes a position detector that detects a movement position of each of joint shafts included in the multi-axis robot, a torque detector that detects a disturbance torque applied to the joint shaft, a routine-operation determination circuit that determines whether or not the multi-axis robot is executing a predefined routine operation, from the movement position detected by the position detector, a reference-value calculation circuit that calculates a disturbance-torque reference value from the disturbance torque detected during execution of the routine operation, a torque correction circuit that corrects the disturbance torque detected while the multi-axis robot executes an operation different from the routine operation by using the disturbance-torque reference value, calculated by the reference-value calculation circuit, to thereby acquire a corrected disturbance torque, and a failure diagnostic circuit that performs a fai

Abstract: An image sensor includes: a first pixel including a first micro lens, a first photoelectric conversion unit that photoelectrically converts light that has passed through the first micro lens, and a reflective unit that reflects light that has passed through the first photoelectric conversion unit back to the first photoelectric conversion unit; and a second pixel including a second micro lens and a second photoelectric conversion unit that photoelectrically converts light that has passed through the second micro lens, wherein: positions of condensation of incident light in the first pixel and the second pixel are different.

Abstract: An image sensor includes a plurality of pixels each including: a photoelectric conversion unit that photoelectrically converts incident light and generates electric charge; a reflective unit that reflects light that has passed through the photoelectric conversion unit back to the photoelectric conversion unit; and an output unit that outputs electric charge generated by the photoelectric conversion unit, wherein: an area of the reflective unit possessed by each of the plurality of pixels varies.

Abstract: An image sensor includes pixels arranged in a first direction. Each of first and second pixels has a photoelectric conversion unit converting incident light and generating electric charge, a reflective unit reflecting light, and an output unit. In a plane intersecting the incident light direction, the first pixel reflective unit is in a region more toward the first direction than the first pixel photoelectric conversion unit center. In a plane intersecting the incident light direction, the second pixel reflective unit is in a region more toward the direction opposite to the first direction than the second pixel photoelectric conversion unit center. First and second pixel output unit portions are respectively upon optical paths along which light having passed through the first and second pixel photoelectric conversion units are incident upon the first and second pixel reflective units.

Abstract: An image sensor includes a plurality of pixels each including: a photoelectric conversion unit that photoelectrically converts incident light and generates electric charge; a reflective unit that reflects light that has passed through the photoelectric conversion unit back to the photoelectric conversion unit; and an output unit that outputs the electric charge generated by the photoelectric conversion unit, wherein: a position of the reflective unit possessed by each of the plurality of pixels varies.

Abstract: Management device 100 includes reservation receiver 103 that receives reservation conditions including an identifier for identifying network appliance 10 that can be electrically controlled through a communication network and reservation time information indicating a time of controlling network appliance 10, that generates reservation information based on the reservation conditions, and that outputs address information for accessing a user screen corresponding to the reservation information that is generated; usability determiner 104 that determines usability of network appliance 10 based on the reservation information, when an instruction to operate network appliance 10 is issued from the user screen that is accessed by using the address information; and appliance controller 105 that controls network appliance 10 based on the instruction, in a case where the usability determiner determines that network appliance 10 is usable.

Abstract: An image-capturing device allowing skew reduction, and an image-capturing system allowing skew reduction are provided. An image-capturing device is provided, including a plurality of photoelectric converting units; and a plurality of light-receiving units that are arranged corresponding to a plurality of blocks each constituted by one or more photoelectric converting units, and receive drive light instructing driving of the photoelectric converting units to output a drive signal to a corresponding photoelectric converting unit among the photoelectric converting units. In addition, an image-capturing system is provided, including the image-capturing device; and a light-emitting unit that is spaced apart from the plurality of light-receiving units, and emits the drive light to the plurality of light-receiving units.

Abstract: Provided is an image processing apparatus including as image acquiring section that acquires a plurality of images obtained by imaging, at different times, a subject irradiated with lights intensity-modulated with a plurality of modulation frequencies or modulation frequency bands; and a demodulating section that demodulates pixel values of the plurality of images with a plurality of demodulation frequencies or demodulation frequency bands based on the plurality of modulation frequencies or modulation frequency bands, for each pixel, thereby generating a plurality of pieces of pixel information indicating subject light amounts from the subject caused by each of the lights intensity-modulated with the plurality of modulation frequencies or modulation frequency bands, for each pixel.

Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

Abstract: An image sensor having a plurality of pixels along a first direction includes: a first pixel having a first photoelectric conversion unit that generates an electric charge through photoelectric conversion and a reflecting portion disposed at least in a part of an area located in the first direction relative to a center of the first photoelectric conversion unit, which reflects part of light having been transmitted through the first photoelectric conversion unit toward the first photoelectric conversion unit; and a second pixel having a second photoelectric conversion unit that generates an electric charge through photoelectric conversion and a second reflecting portion disposed at least in a part of an area located in a direction opposite from the first direction relative to a center of the second photoelectric conversion unit, which reflects part of light having been transmitted through the second photoelectric conversion unit toward the second photoelectric conversion unit.