Abstract: The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

Abstract: The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

Abstract: The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

Abstract: Two wafers are properly brought into contact with each other. The first wafer is supported by a wafer support table (3) having an annular peripheral portion (3d). The substrate support table (3) is in contact with only the peripheral portion (3d) of the first wafer. While the second wafer opposing the first wafer is supported, the lower surface of the second wafer is pressed near its central portion, so the first and second wafers come into contact with each other outward from the central portion. The central portion (3c) of the wafer support table (3) is not in contact with the first wafer. Even when particles adhere to the central portion, unevenness on the supported first wafer can be prevented. Therefore, no gas is left between the wafers. This invention also provides a wafer support table formed by fabricating a silicon wafer. A commercially available silicon wafer is fabricated by lithography to prepare a wafer support table (31).

Abstract: The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

Abstract: Two wafers are properly brought into contact with each other. The first wafer is supported by a wafer support table (3) having an annular peripheral portion (3d). The substrate support table (3) is in contact with only the peripheral portion (3d) of the first wafer. While the second wafer opposing the first wafer is supported, the lower surface of the second wafer is pressed near its central portion, so the first and second wafers come into contact with each other outward from the central portion. The central portion (3c) of the wafer support table (3) is not in contact with the first wafer. Even when particles adhere to the central portion, unevenness on the supported first wafer can be prevented. Therefore, no gas is left between the wafers. This invention also provides a wafer support table formed by fabricating a silicon wafer. A commercially available silicon wafer is fabricated by lithography to prepare a wafer support table (31).

Abstract: One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180° to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.

Abstract: An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for supporting a peripheral portion of the semiconductor substrate such that a surface portion of a semiconductor substrate remains exposed, a support jig which includes a tapered hollow portion for supporting the sealing member, and a device for introducing a fluid of gas or liquid into the tapered hollow portion. When the fluid is introduced, the sealing member is pressed against and brought into hermetic contact with the tapered hollow portion and with the entire peripheral portion of the semiconductor substrate such that the electrolytic solution is separated into electrically isolated parts by coordination between the semiconductor substrate, the sealing member, and the support jig.