Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.

Abstract: A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20° or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20° or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.

Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.

Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

Abstract: A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20° or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20° or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.

Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.

Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.

Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

Abstract: An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.

Abstract: A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.

Abstract: A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.

Abstract: Provided is a crystal producing apparatus capable of producing a single crystal having excellent quality. The crystal producing apparatus for growing a single crystal on a crystal growth surface of a seed crystal in a raw material solution by a liquid phase growth method, includes: a liquid tub which accommodates a raw material solution; a crystal holding element which holds a seed crystal; and a solution flowing element which allows the raw material solution in the liquid tub to flow. Among these, the crystal holding element is able to hold the seed crystal in the liquid tub and is movable in at least a partial region on an xy plane perpendicular to a z-axis that extends in a depth direction of the liquid tub.