Abstract: A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.

Abstract: A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

Abstract: A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

Abstract: A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.

Abstract: A display capable of reducing an electric effect of a color filter on a pixel circuit, and thereby suppressing degradation in display quality is provided. The display includes a pixel drive substrate having a color filter, a display function layer provided on the pixel drive substrate, a first electrode and a second electrode to supply a drive voltage to the display function layer, and a third electrode disposed to face the color filter.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode.

Abstract: Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

Abstract: There is provided an image log management apparatus. The apparatus includes a rule storage unit that stores a rule for determining whether or not a log image is recorded at a time when each processing operation is performed by one or more image-processing units according to a program in which a procedure for using the one or more image-processing units is described; an acceptance unit that accepts the program in which the procedure for using the one or more image-processing units is described; a program execution unit that executes the program accepted in the acceptance unit; and a log controller that, by reference to a rule applicable to each of the image-processing units used in the program, performs control as to whether or not a log image relating to execution of the program in the program execution unit is recorded.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

Abstract: The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

Abstract: There is provided a computer readable medium storing a program causing a computer to execute a function for an image processing. The function comprises: executing a job; creating a log image from an image handled in the job; setting a creation guarantee level of the log image; and controlling the execution of the job to be completed after the log image is created, if the creation guarantee level is set to a high level.

Abstract: A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: A particle for a display medium that can be used in an information display panel in which a display medium having an optical reflectivity and an electrification property is sealed between two substrates, at least one of which substrates is transparent; electrification is applied to the display medium to move the display panel, thereby to display an information image, in which an external additive is attached to a surface of a mother particle serving as a main body of a particle, and, the external additive has a first external additive particle having a smaller particle diameter formed such that an average particle diameter falls in a range of 7 nm to 8 nm and 80 wt % or more of the entire first external additive particle has a particle diameter falling within ±2 nm from the average particle diameter, and a second external additive particle having a larger particle diameter formed such that 10 wt % or lower of the entire second external additive particle has a particle diameter of 10 nm or lower.

Abstract: When a preceding vehicle (Vb) starts during deceleration of a vehicle (Va) which is trying to stop following the stopped preceding vehicle (Vb), if the vehicle (Va) accelerates following the preceding vehicle (Vb), the driver possibly mistakes that the vehicle is equipped with an automatic start function. A virtual preceding vehicle (Vb?) is set at the stop position of the preceding vehicle (Vb), so that the vehicle (Va) is temporarily stopped following the stopping virtual preceding vehicle (Vb?) even if the actual preceding vehicle (Vb) is started. As a result, the vehicle (Va) is not started until the driver indicates the intention to start by operating a start switch, and the driver can be prevented from mistaking that the vehicle is equipped with an automatic start function.

Abstract: When a start-up operation by a driver is detected while a vehicle is maintained at a stopped state, a target driving force for suppressing the movement of the vehicle on the road to be driven is calculated, based on the grade obtained regarding the road to be driven on. After the vehicle is driven by the target driving force, the braking force is released so as to terminate the maintaining of the stopped state of the vehicle. Preferably, the state of being driven by the target driving force is maintained until the releasing of the braking force is completed. When the releasing of the braking force is completed, the driving force is increased to start-up the vehicle. With such a start-up control, vehicles are prevented from moving temporarily in a direction opposite from the traveling direction, and a smooth star-up can be achieved.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: [Object] To increase the speed of copy processing from an online computer 101 to a standby computer 102. [Solution] When copying copy target information from the online computer 101 to the standby computer 102, a status copy processing unit 110: recognizes, as a synchronous point, a point in time when execution of a first application (AP #1), from among applications 108, is completed; extracts only information stored in a use area 401 of an OS 106 and a use area 403 of a second application (AP #2) from a storage area 400 of a memory at this synchronous point; and transfers the extracted information, as the copy target information necessary to continue the processing, from the online computer 101 to the standby computer 102. [Selected Drawing] FIG.