Abstract: In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.

Abstract: A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.

Abstract: In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.

Abstract: A plasma processing apparatus includes a process chamber having a ceiling with an opening, a supporting frame member placed along the periphery of the ceiling and including a ring-shaped supporting shelf protruding toward the center of the process chamber, and an insulating plate having its peripheral portion supported by the supporting shelf of the supporting frame member and airtightly covering the opening of the ceiling of the process chamber. The plasma processing apparatus is characterized in that the supporting shelf has an inner periphery which includes a corner portion shaped into a curve.

Abstract: A microwave plasma processing apparatus prevents the component parts of a process chamber from being influenced by heat associated with plasma, thereby improving the quality of plasma processing performed in the process chamber. A wavelength reducing member reduces a wavelength of a microwave transmitted therethrough. A slot electrode guides the microwave exiting the wavelength reducing member, the slot electrode provided adjacent to the wavelength reducing member. A first temperature control device controls a temperature of at least one of the slot electrode and component parts including the wavelength reducing member provided in the vicinity of the slot electrode. The microwave exiting the slot electrode is introduced to the process chamber so that plasma is generated by the microwave within the process chamber.

Abstract: A plasma processing apparatus for supplying radio-frequency power into a process chamber so as to generate plasma, to thereby treat an object to be processed with the plasma. In the plasma processing apparatus, the process chamber has a top plate which is disposed opposite to the object to be processed, through the medium of a region for generating the plasma, and a radio-frequency antenna is disposed in the inside and outside of the process chamber so that the radio-frequency antenna is wound around the top plate.

Abstract: A plasma processing apparatus for supplying microwaves into a process chamber so as to generate plasma, to thereby treat an object to be processed with the plasma. In the plasma processing apparatus, the process chamber has a top plate which is disposed opposite to the object to be processed, through the medium of a region for generating the plasma; and the top plate has at least one antenna which is disposed so that the antenna penetrates the top plate into the inside of the process chamber.

Abstract: A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.

Abstract: A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

Abstract: In a microwave plasma processing apparatus that uses a radial line slot antenna, abnormal discharges are suppressed and the excitation efficiency of microwave plasma is improved simultaneously. In the joint between the radial line slot antenna and the coaxial waveguide, the point part of the power supplying line of the coaxial waveguide is separated from the slot plate constructing a radiation face.

Abstract: In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Abstract: In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Abstract: A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

Abstract: A plasma processing apparatus includes a process chamber having a ceiling with an opening, a supporting frame member placed along the periphery of the ceiling and including a ring-shaped supporting shelf protruding toward the center of the process chamber, and an insulating plate having its peripheral portion supported by the supporting shelf of the supporting frame member and airtightly covering the opening of the ceiling of the process chamber. The plasma processing apparatus is characterized in that the supporting shelf has an inner periphery which includes a corner portion shaped into a curve.

Abstract: In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Abstract: A microwave plasma processing apparatus has a process chamber in which an object to be processed is subjected to plasma processing under a predetermined negative pressure environment. A susceptor holding the object thereon is provided in the process chamber. The susceptor is moved by a susceptor moving member which is moved by a susceptor moving mechanism located outside the process chamber. The susceptor moving member extends from the process chamber via a bellows provided to a bottom of the process chamber. The bellows allows a vertical movement of the susceptor moving member while providing a hermetic seal to the process chamber to maintain the predetermined negative pressure environment in the process chamber. A vacuum pump is provided to the bottom of the process chamber so that an inlet opening of the vacuum pump aligns with the susceptor in the vertical direction.

Abstract: A flat antenna is used for introducing a microwave into a process chamber so as to generate plasma within the process chamber. The flat antenna has a front surface to which the microwave is supplied and a back surface opposite to the front surface. The microwave is supplied to a center portion of the front surface and propagates in radial directions within the flat antenna. A plurality of openings are provided in the flat antenna so that each of the openings extends between the front surface and the back surface of the flat antenna. The contour of each of the openings is curved so as to prevent generation of an abnormal electrical discharge.

Abstract: A flat antenna radiates a microwave toward a process chamber so as to generate a plasma within the process chamber. The flat antenna has a front surface to which the microwave is supplied and a back surface opposite to the front surface. The microwave is supplied to a center portion of the front surface and propagates in radial directions within the flat antenna. A plurality of openings extend between the front surface and the back surface of the flat antenna. A conductive member is located in each of the openings so that a circularly polarized microwave is radiated by each of the openings.

Abstract: A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma.

Abstract: A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.