Abstract: A pickup and delivery or selling apparatus is transportable, and includes: a reserving section in which an article can be reserved; a receiving part in which the article to be reserved in the reserving section is received; a delivering part in which the article is delivered; a plurality of support members each used for supporting the article in the reserving section; a transfer unit configured to transfer the support members each supporting the article between the reserving section and either the receiving part or the delivering part; and an abnormality-managing unit configured to perform a predetermined response to an abnormality occurring in the support members.

Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: [Task] Provided is a proton conductor and a manufacturing method thereof that are suitable for the use in a temperature range between 200° C. and 600° C. [Solution] A proton conductor has electric conductivity of 0.01 S/cm or more at 300° C., wherein a portion of lithium ions of Li14?2xZn1+x(GeO4)4 is substituted with protons. The x is a number equal to or more than 0. 40% to 70% inclusive of movable lithium ions contained in Li14?2xZn1+x(GeO4)4 may be substituted with the protons. 50% to 60% inclusive of movable lithium ions contained in Li14?2xZn1+x as (GeO4)4 may be substituted with the protons. A manufacturing method of a proton conductor comprises a process of substituting a portion of lithium ions with protons by immersing Li14?2xZn1+x(GeO4)4 in a non-aqueous organic solvent containing acid.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: The damper device is equipped with: a cylinder unit having a sliding inner wall surface; a piston unit, having a piston head, which has an outer diameter part that slides on the sliding inner wall surface of the cylinder unit, and divides the interior space of the cylinder unit into a first gas chamber and a second gas chamber, a rod extending from the second gas chamber side of the piston head, and a closed-end hole which opens toward the first air chamber side of the piston head and extends through the interior of the rod in the direction of the second air chamber; and a guide shaft affixed to the first gas chamber side of the cylinder unit and equipped with a tip part having an outer circumferential surface that slides on the inner wall surface of the closed-end hole of the piston unit.

Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.

Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: This inventive wireless communication system comprises a plurality of wireless communication devices (101) each including a radiating oscillator (1), a baseband signal generating unit (4) and a reception signal detecting unit (7).

Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.

Abstract: A microwave/millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.

Abstract: A wireless communication device having extremely simple constitution is used, and a low-cost and low power consumption wireless network system with high-quality signals is provided. The wireless network system comprises a plurality of wireless communication devices (101) each comprising a radiating oscillator (1) configured to integrate a transistor into a microwave oscillating resonator to generate a negative resistance and to commonly use a function of an antenna (11), an intermediate frequency signal generating section (4) and a receiving signal detecting section (7).

Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.

Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.

Abstract: It is possible to improve the negative resistance characteristic that can be expected when an SNS (superconductor-normal conductor-superconductor) structure is used as a structure unit for series connection. On the top of a first superconducting electrode, a second superconducting electrode is superimposed so as to sandwich an insulation film between the first and second superconducting electrodes, with parts of cross sections of the second superconducting electrode and insulation film placed on the top. A normal superconducting line electrically connects the first and second superconducting electrodes passing along the cross section of the insulation film, thereby constituting a structure unit having a single weak link. A plurality of such structure units connected in series are prepared. At the both ends of the series the first or second superconducting electrode is an element connected to a leading line.

Abstract: 8-(3-pentylamino)-2-methyl-3-(2-chloro-4-methoxyphenyl)-6,7-dihydro-5H-cyclopenta[d]pyrazolo[1,5-a]pyrimidine methanesulfonate of the structural formula (I) has Corticotropin Releasing Factor (CRF) antagonist activity and is useful in treating neuropsychiatric and digestive system diseases.