Patents by Inventor Toshiaki Ono
Toshiaki Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200105542Abstract: Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.Type: ApplicationFiled: June 12, 2018Publication date: April 2, 2020Applicant: SUMCO CorporationInventors: Kazuhisa Torigoe, Shigeru Umeno, Toshiaki Ono
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Publication number: 20200091089Abstract: Provided is a silicon wafer manufacturing method capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer manufacturing method according to the present invention is provided with calculating a target thickness of the silicon wafer required for ensuring a warpage reduction amount of a silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness thereof occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.Type: ApplicationFiled: June 6, 2018Publication date: March 19, 2020Applicant: SUMCO CORPORATIONInventors: Bong-Gyun KO, Toshiaki ONO
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Publication number: 20200083060Abstract: A silicon wafer having a BMD density of 5×108/cm3 or more and 2.5×1010/cm3 or less in a region of 80 ?m to 285 ?M from the wafer surface when the silicon wafer is heat-treated at a temperature X (° C., 700° C.?X?1000° C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88×1067×X?22.5.Type: ApplicationFiled: June 19, 2018Publication date: March 12, 2020Applicant: SUMCO CORPORATIONInventors: Toshiaki ONO, Shigeru UMENO
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Publication number: 20200051817Abstract: A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film formation step for forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and a nitrogen-concentration setting step for setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film through the epitaxial-film formation step to a heat treatment in a nitrogen atmosphere.Type: ApplicationFiled: September 12, 2017Publication date: February 13, 2020Applicant: SUMCO CORPORATIONInventors: Kazuya KODANI, Toshiaki ONO, Kazuhisa TORIGOE
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Publication number: 20200020817Abstract: A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm3) and an initial oxygen concentration X (×1017 atoms/cm3) satisfy the expression X??4.3×10?19Y+16.3.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO
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Publication number: 20190352796Abstract: Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.Type: ApplicationFiled: January 11, 2018Publication date: November 21, 2019Applicant: SUMCO CORPORATIONInventors: Masataka HOURAI, Wataru SUGIMURA, Toshiaki ONO, Toshiyuki FUJIWARA
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Publication number: 20190037160Abstract: At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.Type: ApplicationFiled: October 1, 2018Publication date: January 31, 2019Inventors: Toshiaki Ono, Masatsugu Itahashi, Naoki Inatani, Yu Maehashi, Hidekazu Takahashi
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Patent number: 10192754Abstract: A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.Type: GrantFiled: April 21, 2015Date of Patent: January 29, 2019Assignee: SUMCO CORPORATIONInventors: Jun Fujise, Toshiaki Ono
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Publication number: 20180337306Abstract: A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.Type: ApplicationFiled: November 1, 2016Publication date: November 22, 2018Applicant: SUMCO CORPORATIONInventors: Koji MATSUMOTO, Toshiaki ONO, Hiroshi AMANO, Yoshio HONDA
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Patent number: 10136091Abstract: At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.Type: GrantFiled: July 27, 2015Date of Patent: November 20, 2018Assignee: Canon Kabushiki KaishaInventors: Toshiaki Ono, Masatsugu Itahashi, Naoki Inatani, Yu Maehashi, Hidekazu Takahashi
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Patent number: 10110797Abstract: Provided is an imaging device that includes a pixel unit in which each of a plurality of pixels includes m photoelectric conversion units and each of at least a part of the plurality of pixels outputs a first signal based on signal charges of n photoelectric conversion unit or units, where n is less than m; an adder unit configured to add a plurality of first signals output from a plurality of pixels different from each other; a determination unit configured to compare each of the plurality of first signals and a predetermined threshold to determine whether or not the plurality of first signals added by the adder unit include a signal larger than a predetermined threshold; and an output unit configured to output a determination result and the added signal.Type: GrantFiled: July 6, 2016Date of Patent: October 23, 2018Assignee: CANON KABUSHIKI KAISHAInventor: Toshiaki Ono
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Publication number: 20180294307Abstract: Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel and a plurality of second pixels. At least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and a configuration between the counter electrode and the microlens of the first pixel is the same as a configuration between the counter electrode and the microlens of each of the plurality of second pixels.Type: ApplicationFiled: June 11, 2018Publication date: October 11, 2018Inventors: Masatsugu Itahashi, Toshiaki Ono, Hidekazu Takahashi, Naoki Inatani, Yu Maehashi
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Patent number: 10084980Abstract: A solid-state image sensor includes an image sensing unit in which a plurality of pixels are arrayed, a plurality of readout units configured to read out signals from the image sensing unit, a detector configured to detect an occurrence of a latch-up in each of the plurality of readout units, and a controller configured to control power supply to the plurality of readout units. The plurality of readout units are configured to read out signals from a same pixel in the image sensing unit. The controller is configured to shut off power supply to at least part of a readout unit in which the occurrence of the latch-up has been detected out of the plurality of readout units and thereafter supply power to the at least part.Type: GrantFiled: March 15, 2016Date of Patent: September 25, 2018Assignee: Canon Kabushiki KaishaInventors: Takashi Moriyama, Kazuaki Tashiro, Tatsuhito Goden, Toshiaki Ono
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Publication number: 20180204960Abstract: An epitaxial silicon wafer is provided with a boron-doped silicon substrate and an epitaxial layer formed on a surface of the silicon substrate, wherein the boron concentration in the silicon substrate is 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less, and an initial oxygen concentration in the silicon substrate is 11×1017 atoms/cm3 or less. When an oxygen precipitate evaluation heat treatment, such as a heat treatment at 700° C. for 3 hours and a heat treatment at 1,000° C. for 16 hours is executed on the epitaxial silicon wafer, the density of oxygen precipitate in the silicon substrate is 1×1010/cm3 or less.Type: ApplicationFiled: July 6, 2016Publication date: July 19, 2018Applicant: SUMCO CORPORATIONInventors: Kazuhisa TORIGOE, Toshiaki ONO
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Publication number: 20180197751Abstract: An epitaxial silicon wafer includes a silicon wafer consisting of a COP region in which a nitrogen concentration is 1×108?3×109 atoms/cm3, and an epitaxial silicon film formed on the silicon wafer. When heat treatment for evaluation is applied, a density of BMD formed inside the silicon wafer is 1×108?3×109 atoms/cm3 over the entire radial direction of the silicon wafer. An average density of the BMD formed in an outer peripheral region of the silicon wafer which is a 1-10 mm range separated inward from an outermost periphery thereof is lower than the average density of the BMD formed in a center region. A variation in the BMD density in the outer peripheral region is 3 or less, and a residual oxygen concentration in the outer peripheral region is 8×1017 atoms/cm3 or more.Type: ApplicationFiled: January 6, 2017Publication date: July 12, 2018Applicant: SUMCO CORPORATIONInventors: Yasuo KOIKE, Tomokazu KATANO, Toshiaki ONO
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Patent number: 10020203Abstract: An epitaxial silicon wafer includes a silicon wafer consisting of a COP region in which a nitrogen concentration is 1×1012?1×1013 atoms/cm3, and an epitaxial silicon film formed on the silicon wafer. When heat treatment for evaluation is applied, a density of BMD formed inside the silicon wafer is 1×108?3×109 atoms/cm3 over the entire radial direction of the silicon wafer. An average density of the BMD formed in an outer peripheral region of the silicon wafer which is a 1-10 mm range separated inward from an outermost periphery thereof is lower than the average density of the BMD formed in a center region. A variation in the BMD density in the outer peripheral region is 3 or less, and a residual oxygen concentration in the outer peripheral region is 8×1017 atoms/cm3 or more.Type: GrantFiled: January 6, 2017Date of Patent: July 10, 2018Assignee: SUMCO CORPORATIONInventors: Yasuo Koike, Tomokazu Katano, Toshiaki Ono
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Patent number: 10020340Abstract: Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel and a plurality of second pixels. At least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and a configuration between the counter electrode and the microlens of the first pixel is the same as a configuration between the counter electrode and the microlens of each of the plurality of second pixels.Type: GrantFiled: July 28, 2015Date of Patent: July 10, 2018Assignee: Canon Kabushiki KaishaInventors: Masatsugu Itahashi, Toshiaki Ono, Hidekazu Takahashi, Naoki Inatani, Yu Maehashi
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Patent number: 9995693Abstract: After determining the precipitated oxygen concentration and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress ?cri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained precipitated oxygen concentration and residual oxygen concentration; and the obtained critical shear stress ?cri and the thermal stress ? applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress ? is equal to or more than the critical shear stress ?cri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress ? is less than the critical shear stress ?cri.Type: GrantFiled: June 22, 2016Date of Patent: June 12, 2018Assignee: SUMCO CORPORATIONInventors: Jun Fujise, Toshiaki Ono
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Patent number: 9991386Abstract: A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).Type: GrantFiled: April 26, 2016Date of Patent: June 5, 2018Assignee: SUMCO CORPORATIONInventors: Toshiaki Ono, Yumi Hoshino
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Patent number: 9838591Abstract: Ones of row addresses and column addresses of pixels in a first group are the same as those of a second group. A range of the others of the row addresses and the column addresses of the first group excludes that of the second group. A range of the others of row addresses and column addresses is included in a range of the others of the row addresses and the column addresses of the first and second groups. A portion of the range of the row addresses and the column addresses of the first group overlaps with that of the third group, and the other portion of the range of the first group does not overlap with that of the third group. Intra-group addition signals of the first, second, and third groups are obtained.Type: GrantFiled: May 6, 2016Date of Patent: December 5, 2017Assignee: CANON KABUSHIKI KAISHAInventor: Toshiaki Ono