Abstract: A semiconductor device includes a first pad, a second pad, a first output driver provided for the first pad and configured to output a first transmission signal to the first pad, a second output driver provided for the second pad and configured to output a second transmission signal to the second pad, a register that stores first and second calibration values, a first reference resistor for the first pad and having a resistance value that is set according to the first calibration value, a second reference resistor for the second pad and having a resistance value that is set according to the second calibration value, a first setting circuit configured to calibrate a resistance value of the first output driver using the first reference resistor, and a second setting circuit configured to calibrate a resistance value of the second output driver using the second reference resistor.

Abstract: A semiconductor memory device includes an output pin configured for connection with a memory controller, an output circuit configured to output through the output pin a voltage signal that changes over time in accordance with one or more bits of data to be output to the memory controller, and a control circuit configured to temporarily change a drive capability of the output circuit each time a voltage signal corresponding to one bit of the data is output through the output pin.

Abstract: A low yield ratio and high-strength hot rolled steel sheet having a composition containing, on a mass percent basis, 0.03% to 0.10% C, 0.10% to 0.50% Si, 1.4% to 2.2% Mn, 0.005 % to 0.10% Al, 0.02% to 0.10% Nb, 0.001% to 0.030% Ti, 0.05% to 0.50% Mo, 0.05% to 0.50% Cr, and 0.01% to 0.50% Ni, in which Moeq preferably satisfies the range of 1.4% to 2.2%; and a microstructure including a main phase that contains bainitic ferrite having an average grain size of 10 ?m or less and a secondary phase that contains massive martensite having an aspect ratio of less than 5.0 in an area ratio of 1.4% to 15%.

Abstract: A method for producing a compound having a deuterated aromatic ring or heterocyclic ring according to the invention includes heating a compound having an aromatic ring or heterocyclic ring in the presence of heavy water, a transition metal and a metal which generates deuterium. As the metal which generates deuterium, at least one metal selected from the group consisting of aluminum, magnesium, zinc, iron, lead and tin is preferred. As the transition metal, at least one metal selected from the group consisting of platinum, palladium, ruthenium and rhodium is preferred. The heating is preferably carried out by microwave irradiation.

Abstract: A method for producing MMA-d8 which includes a step of exchanging D in hydroxyl group of methanol-d4 represented by the formula: CD3OD with H to prepare the methanol-d3 represented by the formula CD3OH and simultaneously recovering a deuterium-containing compound, and a step of reacting methanol-d3 with sulfuric acid salt of methacrylic acid amide represented by the formula CD2=(CD3)CO(NH2.H2SO4) to prepare MMA-d8 represented by the formula: CD2=(CD3)COOCD3.

Abstract: A method for producing MMA-d8 which includes a step of exchanging D in hydroxyl group of methanol-d4 represented by the formula: CD3OD with H to prepare the methanol-d3 represented by the formula CD3OH and simultaneously recovering a deuterium-containing compound, and a step of reacting methanol-d3 with sulfuric acid salt of methacrylic acid amide represented by the formula CD2?(CD3)CO(NH2·H2SO4) to prepare MMA-d8 represented by the formula: CD2?(CD3)COOCD3.