Abstract: Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower.

Abstract: A plasma processing apparatus, which introduces electromagnetic waves having a frequency of the VHF band or higher into a processing container and processes a substrate by using plasma generated from a gas, includes: a stage which is provided inside the processing container and on which the substrate is placed; an electromagnetic wave introducer formed to face an inner wall of the processing container and configured to introduce the electromagnetic waves into the processing container; and a dielectric member provided on the inner wall through which the electromagnetic waves propagate, wherein a first portion of the dielectric member protrudes from the inner wall toward the stage, and wherein a second portion of the dielectric member is inserted into a recess or step portion of the inner wall.

Abstract: A plasma processing apparatus includes: a chamber; an introducer installed such that electromagnetic waves are introduced into the chamber from the introducer; and a choke structure installed on a wall of the chamber and configured to suppress propagation of the electromagnetic waves downstream along an inner wall surface of the chamber from a location at which the choke structure is installed. The choke structure includes: a first portion having a slit shape and connected to a space within the chamber; and a second portion extending from the first portion in the wall of the chamber. A length of the second portion along a direction of an electric field of the electromagnetic waves in the second portion is longer than a length of the first portion along a direction of an electric field of the electromagnetic waves in the first portion.

Abstract: A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

Abstract: A plasma processing apparatus includes: a coaxial tube that extends in a vertical direction and forms a portion of a radio frequency waveguide; a substrate support configured to support a substrate; an electrode including a gas flow path connected to a gas ejection port opened toward a space above the substrate support, wherein the electrode is provided above the substrate support and an inner conductor of the coaxial tube is connected to a center of the electrode; an enlarged diameter portion forming a part of the radio frequency waveguide together with the electrode and connected to an outer conductor of the coaxial tube; and dielectric tubes formed of a dielectric material, wherein each of the dielectric tubes is connected to the electrode and penetrates a space between the electrode and the enlarged diameter portion to supply a gas to the electrode, wherein the dielectric tubes is scatteredly provided.

Abstract: A culture container linkage device according to the present disclosure includes a first actuator configured to advance or retract needles 32, an actuator holder rotatably provided on a frame and configured to hold the first actuator, a second actuator, and a washer configured to wash the needles. The second actuator rotates the needles via the actuator holder. The needles are configured to be positioned, by the second actuator, at a container-facing position at which the needles face a culture container and a washing-facing position at which the needles face the washer.

Abstract: Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower.

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided within the chamber; a shower head made of a metal and including a plurality of gas holes open toward a space within the chamber, the shower head being provided above the substrate support; a gas supply pipe made of the metal and extending vertically above the chamber to be connected to a center of an upper portion of the shower head; an introduction part formed of a dielectric material and provided along an outer circumference of the shower head so as to introduce electromagnetic waves, which are VHF waves or UHF waves, into the chamber; and an electromagnetic wave supply path connected to the gas supply pipe, wherein the gas supply pipe includes an annular flange, and the supply path includes a conductor connected to the flange.

Abstract: Improvement of plasma heat dissipation has been required with respect to a plasma processing apparatus. The plasma processing apparatus includes a dielectric, a conductive film, a heat radiation film, and an electrode. The dielectric has one surface which faces a space for plasma generation. The conductive film is installed on the other surface of the dielectric. The heat radiation film is installed on the conductive film, and has a higher emissivity than the conductive film. The electrode is electrically connected to the conductive film so as to apply electric power for plasma generation.

Abstract: A culture container linkage device according to the present disclosure includes a first actuator configured to advance or retract needles 32, an actuator holder rotatably provided on a frame and configured to hold the first actuator, a second actuator, and a washer configured to wash the needles. The second actuator rotates the needles via the actuator holder. The needles are configured to be positioned, by the second actuator, at a container-facing position at which the needles face a culture container and a washing-facing position at which the needles face the washer.

Abstract: A buffer tank for storing a culture medium for cell culture, includes: a tank main body including a cylindrical inner surface extending in a vertical direction, an inverted conical storage bottom surface formed below the cylindrical inner surface, and a storage space defined by the cylindrical inner surface and the inverted conical storage bottom surface and configured to store the culture medium an injection portion configured to inject the culture medium from the inverted conical storage bottom surface of the tank main body into the storage space; and a discharge portion configured to discharge the culture medium stored in the storage space, wherein the injection portion is configured to inject the culture medium toward a central axis line of the cylindrical inner surface of the tank main body and obliquely upward with respect to the central axis line.

Abstract: A plasma processing system includes: a plasma processing apparatus which processes a substrate in a processing container by turning a processing gas supplied inside the processing container into plasma; and a carrier arm which carries the substrate in and out of the processing container, wherein a loading table is mounted inside the processing container and the substrate is loaded on the top surface of the loading table, and one or more recessed portions are formed on regions of the top surface of the loading table, wherein the regions corresponds to locations on the carrier arm for supporting the substrate. The coating layer is not transferred from the top surface of the loading table to the back of the substrate in the regions corresponding to the locations on the carrier arm for supporting the substrate. Accordingly, the coating layer is not transferred to the top surface of the carrier arm.