Abstract: A wash water processing apparatus of reusing wash water includes: a washing processing part washing a subject to be washed; a wash water accommodation part into which processed water used in a washing process in the washing processing part is once accommodated; a sterilization and purification unit causing, while acting with an ozone supply function, ozone water to be contained in the processed water flowing through the wash water accommodation part in a circular manner; and a filtration mechanism part configured to include a filter and an ion-exchange resin and sequentially filtrating the processed water to be reused as wash water in the washing processing part, as the ozone water is supplied as the processed water is mixed to dilute an ozone concentration in the wash water accommodation part. In a state where the ozone concentration is adjusted, the processed water is passed through the filter and the ion-exchange resin.

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Abstract: An operation switch that is housed in a housing recess of a switch disposition surface located in an operation part main body and between a bending operation knob disposition surface and a universal cable connection surface and that is configured to swing in a longitudinal axis direction is provided, and in a case where the endoscope operation part is viewed from a side facing the switch disposition surface, a position of a top portion of the operation switch in the longitudinal axis direction is located upward of a center position of a universal cable connection portion in a state in which the operation switch is not operated.

Abstract: A wash water processing apparatus of reusing wash water includes: a washing processing part washing a subject to be washed; a wash water accommodation part into which processed water used in a washing process in the washing processing part is once accommodated; a sterilization and purification unit causing, while acting with an ozone supply function, ozone water to be contained in the processed water flowing through the wash water accommodation part in a circular manner; and a filtration mechanism part configured to include a filter and an ion-exchange resin and sequentially filtrating the processed water to be reused as wash water in the washing processing part, as the ozone water is supplied as the processed water is mixed to dilute an ozone concentration in the wash water accommodation part. In a state where the ozone concentration is adjusted, the processed water is passed through the filter and the ion-exchange resin.

Abstract: A wash water processing method and a wash water processing apparatus in a simple structure capable of effectively decomposing organic matters and killing bacteria contained in wash water, extending the life of a filter of a filtration apparatus and an ion-exchange resin and, furthermore, extending a bacteria-killing/washing interval of a washing processing part. In the wash water processing apparatus (11) and the washing method, a wash water accommodation part (12) into which processed water processed in a washing processing part (10) flows and a filtration mechanism part (14) are connected and the wash water accommodation part has connected in a circulatable manner thereto an inflow flow path and an outflow flow path of a sterilization and purification unit which organically couples respective functions of an ozone supply part which supplies ozone, an ultraviolet irradiation part which irradiates with ultraviolet rays, and a photocatalysis part which causes a photocatalyst to act.

Abstract: A wash water processing method and a wash water processing apparatus in a simple structure capable of effectively decomposing organic matters and killing bacteria contained in wash water, extending the life of a filter of a filtration apparatus and an ion-exchange resin and, furthermore, extending a bacteria-killing/washing interval of a washing processing part. In the wash water processing apparatus (11) and the washing method, a wash water accommodation part (12) into which processed water processed in a washing processing part (10) flows and a filtration mechanism part (14) are connected and the wash water accommodation part has connected in a circulatable manner thereto an inflow flow path and an outflow flow path of a sterilization and purification unit which organically couples respective functions of an ozone supply part which supplies ozone, an ultraviolet irradiation part which irradiates with ultraviolet rays, and a photocatalysis part which causes a photocatalyst to act.

Abstract: A welding state inspection method for ultrasonic-welded plate-like members includes the steps of measuring energy that has been transmitted to an anvil when ultrasonic-welding a plurality of plate-like members stacked on the anvil while pressing a horn that vibrates against the plate-like members; and determining a quality of a welding state of the plate-like members on the basis of the energy measured in the measuring step.

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a first insulating film disposed aligned with the second wiring line in the first direction; a first film disposed between the first wiring line and the first insulating film; and a second film disposed between the first insulating film and the first film and configured from a material different from that of the first film.

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing the first direction and a resistance change film provided between the first wiring and the second wiring. The second wiring includes a first conductive layer and a first intermediate layer including a first region provided between the first conductive layer and the resistance change film. The first intermediate layer includes a material having nonlinear resistance characteristics.

Abstract: There is provided an information processing system including an acquisition section configured to acquire a movement direction and a movement purpose from each one of a plurality of terminal devices; and a guide information issuing section configured to issue a guide information which is generate based on the movement direction and the movement purpose of the a plurality of terminal devices.

Abstract: According to one embodiment, a memory device includes a pillar, a first wiring, a second wiring, an insulating film provided between the first wiring and the second wiring, a first layer provided between the first wiring and the pillar in the second direction and including a first metal oxide containing a first metal and oxygen, a second layer provided between the second wiring and the pillar in the second direction and including the first metal oxide containing the first metal and oxygen, and an intermediate film provided between the pillar and the first layer and between the pillar and the second layer in the second direction and including a second metal oxide containing the first metal and oxygen. Concentration of oxygen contained in the first metal oxide is lower than concentration of oxygen contained in the second metal oxide.

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a first insulating film disposed aligned with the second wiring line in the first direction; a first film disposed between the first wiring line and the first insulating film; and a second film disposed between the first insulating film and the first film and configured from a material different from that of the first film.

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.

Abstract: In this semiconductor memory device, the first conducting layers are arrayed laminated in a first direction, and extend in a second direction intersecting with the first direction. The first conducting layers are arrayed in a third direction via interlayer insulating films. The third direction intersects with the first direction and the second direction. The interlayer insulating film is disposed between the first conducting layers arrayed in the third direction, and extends in the first direction. The second conducting layer is disposed between the first conducting layers arrayed in the third direction, and extends in the first direction. The second conducting layer has an approximately circular cross-sectional shape intersecting with the first direction. The variable resistance layer surrounds a peripheral area of the second conducting layer, and is disposed at a position between the second conducting layer and the first conducting layer.

Abstract: According to one embodiment, this semiconductor memory device includes first conducting layers, a memory layer, and second conducting layers. The first conducting layers are laminated at predetermined pitches in a first direction perpendicular to a substrate. The first conducting layers extend in a second direction parallel to the substrate. The second conducting layer extends in the first direction. A memory layer surrounds a circumference of the second conductive layer. The first conductive layers is in contact with a side surface of the second conductive layer via the memory layer. The memory cells are provided at intersections of the first conducting layers and the second conducting layer.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises: a memory cell array; and a control circuit that manages a setting operation and a read operation. The memory cell array comprises: a first wiring line; a second wiring line intersecting the first wiring line; and a memory cell including a variable resistance element and a nonlinear element. The variable resistance element is configured having a first metal film, a first variable resistance film, a second variable resistance film, and a second metal film stacked and disposed therein in this order. A work function of the second metal film is smaller than a work function of the first metal film.