Abstract: Disclosed are a mouse homozygous or heterozygous for the defect of the Noc2 gene, and a tissue and a cell of the mouse. The Noc2 knockout mice, which exhibit stress-related insulin hyposecretion and accumulation of secretory granules of increased size and irregular shape in exocrine cells, provide a test system used in the development of therapeutic drugs for related disorders.

Abstract: Disclosed are a mouse homozygous or heterozygous for the defect of the Noc2 gene, and a tissue and a cell of the mouse. The Noc2 knockout mice, which exhibit stress-related insulin hyposecretion and accumulation of secretory granules of increased size and irregular shape in exocrine cells, provide a test system used in the development of therapeutic drugs for related disorders.

Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer insulating layer which covers said element,a hydrogenation treatment which comprises said interlayer insulating layer provided thereon a capping layer for blocking hydrogen diffusion, so that water entrapped by the interlayer insulating layer may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the capping layer.

Abstract: The present invention provides a color display device in which the shape of an on-chip color filter pattern is improved to remove differences in height on the surface of a driving substrate. In the color display device, normal color filters are formed in alignment with pixel apertures, and a dummy color filter is formed in the spaces between the respective color filters apart from contact holes. Differences in height between the color filters and the spaces between the respective color filters are removed to obtain a color display device having excellent quality of liquid crystal alignment.

Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

Abstract: A synthetic quartz glass substrate (1) supporting active elements is formed of high-purity synthetic quartz glass having, a hydroxyl group content of 200 ppm or below and chlorine group content of 50 ppm or below. The substrate (1) may have an impurity level of 1 ppm or less sodium and 1 ppm or less aluminum. TFTs (6), i.e., active elements, and picture element electrodes (7) are formed on the surface of the synthetic quartz glass substrate (1) to construct a driving panel for a liquid crystal display of an active matrix type. A liquid crystal panel is formed by disposing the driving panel and a counter substrate (2) opposite to each other and sandwiching a liquid crystal layer (3) between the driving panel and the counter substrate (2).