Abstract: To provide a safety joint housing device for preventing a plug of a safety joint or a filling hose from being locked in a lower opening of a casing when the safety joint separates, thereby preventing a filling device from falling over and being damaged. A safety joint housing device 100 according to the present invention houses a safety joint 101 including a plug 10 connected to a filling hose 61 and a socket 20 provided in a filling device 200, the plug 10 and the socket 20 separating from each other when a tensile load exceeding a predetermined level is applied, the safety joint housing device 100 including: a casing 320; a substrate 80 attached to the casing 320 on a main body side of the filling device 200; and a member 30 that is provided at a lower opening 320A of the casing 320 and deforms when in contact with the plug 10 or the filling hose 61.

Abstract: To provide a filling hose guide device for preventing a plug of a safety joint or a filling hose from being locked in a lower opening of a casing when a safety joint separates, thereby preventing a filling device from falling over and being damaged. A filling hose guide device 100 according to the present invention is characterized in that after a plug 10 connected to a filling hose 61 and a socket 20 provided in a filling device 200 in a safety joint 300 separate when a tensile load above a predetermined level is applied to the filling hose 61, the filling hose guide devices 100 include: a rotatable or deformable member 30A, 30B, with which the filling hose 61 contacts, below the safety joint 300; and a support structure 50, through which the filling hose 61 passes, for supporting the rotatable or deformable member 30A, 30B.

Abstract: To provide a safety joint housing device for preventing a plug or a filling hose from being locked in a lower opening of a casing when the safety joint is separated, thereby preventing a filling device from falling over and being damaged.

Abstract: To provide a safety joint housing device for preventing a plug or a filling hose from being locked in a lower opening of a casing when the safety joint is separated, thereby preventing a filling device from falling over and being damaged.

Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.

Abstract: Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixel 101 having an electromagnetic wave detecting element 111 configured to detect an electromagnetic wave; a switch 110 configured to read out a signal from the pixel; a signal generating unit 102 configured to generate a signal 114 having a predetermined period, wherein the pixel is connected to a transmission line 103 for supplying, to the pixel, the signal having the predetermined period, and to a scanning line 106 and 107 for reading out the signal from the pixel through the switch, and the pixel has a frequency converting element 113 configured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.

Abstract: A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.

Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.

Abstract: A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e2 times the electric field intensity of the terahertz wave at the interface.

Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.

Abstract: A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e2 times the electric field intensity of the terahertz wave at the interface.

Abstract: The present invention relates to a terahertz wave generating apparatus including a terahertz wave generating element including a nonlinear optical crystal that generates a terahertz wave in response to light incident on the nonlinear optical crystal, a coupling member to extract the terahertz wave generated from the nonlinear optical crystal, a photodetector to detect light emitted from the nonlinear optical crystal, and an adjusting unit to adjust the light incident on the nonlinear optical crystal based on a result of detection by the photodetector.

Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.

Abstract: A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.

Abstract: A terahertz wave generation element is provided, which includes: an optical waveguide including a core of electro-optic crystal; an optical coupler for extracting a terahertz wave generated from the optical waveguide when light propagates in the optical waveguide to a space; and a reflecting layer disposed on the opposite side to the optical coupler with respect to the core of the optical waveguide, so as to reflect the generated terahertz wave. According to the element, it is possible to provide a generation element that can generate a relatively high intensity terahertz wave efficiently by photoexcitation or generate a terahertz wave having a relatively narrow pulse width, so as to flexibly control waveform shaping of the generated terahertz wave.

Abstract: The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.

Abstract: A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.

Abstract: The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.

Abstract: Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixel 101 having an electromagnetic wave detecting element 111 configured to detect an electromagnetic wave; a switch 110 configured to read out a signal from the pixel; a signal generating unit 102 configured to generate a signal 114 having a predetermined period, wherein the pixel is connected to a transmission line 103 for supplying, to the pixel, the signal having the predetermined period, and to a scanning line 106 and 107 for reading out the signal from the pixel through the switch, and the pixel has a frequency converting element 113 configured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.

Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.