Abstract: A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips are formed in a pattern closely adjacent in a line width orientation, electrically separated from each other. The inter-layer insulating layer is formed the lower conductive film strips. The implanted conductive members are implanted in connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the lower conductive film strips. The upper conductive film strips are formed on the implanted conductive members and the inter-layer insulating layer to connect the lower conductive film strips in series so that the lower conductive film strips, the implanted conductive members, and the upper conductive film strips form an electric coil.

Abstract: A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips are formed in a pattern closely adjacent in a line width orientation, electrically separated from each other. The inter-layer insulating layer is formed the lower conductive film strips. The implanted conductive members are implanted in connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the lower conductive film strips. The upper conductive film strips are formed on the implanted conductive members and the inter-layer insulating layer to connect the lower conductive film strips in series so that the lower conductive film strips, the implanted conductive members, and the upper conductive film strips form an electric coil.

Abstract: A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips are formed in a pattern closely adjacent in a line width orientation, electrically separated from each other. The inter-layer insulating layer is formed the lower conductive film strips. The implanted conductive members are implanted in connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the lower conductive film strips. The upper conductive film strips are formed on the implanted conductive members and the inter-layer insulating layer to connect the lower conductive film strips in series so that the lower conductive film strips, the implanted conductive members, and the upper conductive film strips form an electric coil.

Abstract: A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips are formed in a pattern closely adjacent in a line width orientation, electrically separated from each other. The inter-layer insulating layer is formed the lower conductive film strips. The implanted conductive members are implanted in connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the lower conductive film strips. The upper conductive film strips are formed on the implanted conductive members and the inter-layer insulating layer to connect the lower conductive film strips in series so that the lower conductive film strips, the implanted conductive members, and the upper conductive film strips form an electric coil.

Abstract: A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.