Abstract: A manufacturing method of a semiconductor device includes: a first step of, after joining a wire to an electrode using a capillary, forming a wire part by moving the capillary to a third target pointwhile feeding out the wire; a second step of forming a bent part by moving the capillary to a fourth target point while feeding out the wire; a third step of processing the bent part into a planned cut part by repeating lowering and raising of the capillary for multiple times; and a fourth step of cutting the wire at the planned cut part by raising the capillary with a wire clamper closed to form a pin wire.

Abstract: A wire bonding apparatus of an aspect includes: a clamp apparatus, having a pair of arms; a stage, moving the clamp apparatus in a horizontal direction; a rod member; a contact detection part, detecting contact between the rod member and the clamp apparatus; and a control apparatus, controlling opening and closing of the pair of arms and an operation of the stage and acquiring position information of the clamp apparatus. The control apparatus obtains an opening amount of the pair of arms based on position information of the clamp apparatus at a time when an outer side surface of a first arm contacts the rod member in a state where the pair of arms are closed and position information of the clamp apparatus at the time when the outer side surface of the first arm contacts the rod member in a state where the pair of arms are open.

Abstract: A bump forming method includes: a bonding step of bonding the leading end of a wire extending out of the tip of a bonding tool to a first point (X1); a wire pay-out step of moving the bonding tool in a direction away from the first point; a thin portion forming step of pressing a portion of the wire at a second point (X2) on a reference plane using the bonding tool to form a thin portion (64) in the wire; a wire shaping step of shaping the wire bonded to the first point in a manner rising from the reference plane; and a bump forming step of cutting the wire at the thin portion to form a bump (60) having a shape rising from the reference plane at the first point. It is therefore possible to form a bump having a desired height more easily and efficiently.

Abstract: The invention is to provide a method of manufacturing I-III-VI and I-II-IV-VI compound semiconductor thin-films, wherein a compound semiconductor crystal is efficiently grown to form a large grain diameter and the content of each of the elements contained in the compound semiconductor can be controlled. A substrate in which a I-III-VI or I-II-IV-VI compound semiconductor thin-film formed on the surface is heated such that a first temperature of the substrate is 100° C. to 700° C., then a non-oxidizing gas heated to a second temperature that is higher than the first temperature is flowed within a chamber so that the compound semiconductor thin-film formed on the surface of the substrate is thermally treated.

Abstract: A wire bonding method for bonding a ball 11 which is formed at a tip end of a bonding wire to a pad 2 that is a first bond point to form a first bonding part 12 and bonding the wire 10 to an interconnect wiring 4 that is a second bond point to form a second bonding part, thus connecting the pad 2 and the interconnect wiring with the wire, wherein after the ball is bonded to the first bond point and a capillary 6 is ascended, examination is performed to find any bonding failure of the first bonding part; and when the bonding failure at the first bond point is found, then the capillary is caused to descend to execute bonding to bond the first bonding part to the first bond point.

Abstract: Provided is a wire bonding apparatus including: a wire cutting unit configured to cut a wire by bonding the wire using a capillary and then moving the capillary and a first clamper upward while the first clamper remains closed; and a wire extending unit configured to extend a tail wire from a tip end of the capillary by moving the capillary upward and then moving the capillary and the first clamper upward in a state in which the first clamper is opened and a second clamper is closed. The wire bonding apparatus having such a structure effectively prevents the wire from falling out and bending.

Abstract: Provided is a wire bonding apparatus including: a wire cutting unit configured to cut a wire by bonding the wire using a capillary and then moving the capillary and a first clamper upward while the first clamper remains closed; and a wire extending unit configured to extend a tail wire from a tip end of the capillary by moving the capillary upward and then moving the capillary and the first clamper upward in a state in which the first clamper is opened and a second clamper is closed. The wire bonding apparatus having such a structure effectively prevents the wire from falling out and bending.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A wire bonding method for bonding a ball which is formed at a tip end of a bonding wire to a pad that is a first bonding point to form a first bonding part and bonding the wire to an interconnect wiring that is a second bonding point to form a second bonding part, thus connecting the pad and the interconnect wiring with the wire, wherein after the ball is bonded to the first bonding point and a capillary is ascended, examination is performed to find any bonding failure of the first bonding part; and when the bonding failure at the first bonding point is found, then the capillary is caused to descend to execute rebonding to bond the first bonding part to the first bonding point with applying greater energy comprising a longer period of bonding time than last first bonding while pressing the capillary to the first bonding point.

Abstract: A wire bonding method including the steps of: descending a capillary 5 from above an external lead 1 to press a wire 10 to such an extent that the wire is not completely connected to the external lead 1, thus forming a thin part 16 in the wire; next ascending the capillary 5 and the thin part 16 to substantially the same height as a first bonding point A, then moving the capillary 5 in a direction away from the first bonding point A, thus making a linear wire portion 18 and then cutting the wire at the thin part 16; then connecting the end 19 (thin part) of the linear wire portion 18 and the wire tip end 20 at the lower end of the capillary 5 are connected to the external lead 1; and then separating the wire tip end 20 from the external lead 1.

Abstract: A wire bonding method with the process of performing a first bonding to a pad of a die that is a first bond point, and the process of performing a second bonding to an interconnect wiring (or a lead) that is a second bond point, thus connecting the pad and the interconnect wiring with a wire. A bump is first formed on a pad, and, in a wire cutting step performed during the step of forming the bump, the wire protruding from the tip end of a capillary is bent in the lateral direction to form a bent part, and then the bent part is bonded to the bump, thus completing the first bonding process; after which the wire is bonded to the interconnect wiring, thus completing the second bonding process.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A method for forming stub bumps in, for instance, semiconductor device fabrication, including a bonded ball formation step for bonding a ball formed at a tip end of a wire passing through a capillary to a pad to form a bonded ball on the pad; a scratching step for, next, scratching a portion of the wire above the bonded ball with an interior edge of the capillary by moving the capillary; a bending step for, next, bending the scratched portion of the wire by moving the capillary; and a cutting step for, thereafter, cutting the wire from the scratched portion by closing a damper during an ascending motion of the capillary.

Abstract: A wire bonding method including the steps of: descending a capillary 5 from above an external lead 1 to press a wire 10 to such an extent that the wire is not completely connected to the external lead 1, thus forming a thin part 16 in the wire; next ascending the capillary 5 and the thin part 16 to substantially the same height as a first bonding point A, then moving the capillary 5 in a direction away from the first bonding point A, thus making a linear wire portion 18 and then cutting the wire at the thin part 16; then connecting the end 19 (thin part) of the linear wire portion 18 and the wire tip end 20 at the lower end of the capillary 5 are connected to the external lead 1; and then separating the wire tip end 20 from the external lead 1.

Abstract: A wire bonding method for bonding a ball 11 which is formed at a tip end of a bonding wire to a pad 2 that is a first bond point to form a first bonding part 12 and bonding the wire 10 to an interconnect wiring 4 that is a second bond point to form a second bonding part, thus connecting the pad 2 and the interconnect wiring with the wire, wherein after the ball is bonded to the first bond point and a capillary 6 is ascended, examination is performed to find any bonding failure of the first bonding part; and when the bonding failure at the first bond point is found, then the capillary is caused to descend to execute bonding to bond the first bonding part to the first bond point.

Abstract: A wire bonding method with the process of performing a first bonding to a pad of a die that is a first bond point, and the process of performing a second bonding to an interconnect wiring (or a lead) that is a second bond point, thus connecting the pad and the interconnect wiring with a wire. A bump is first formed on a pad, and, in a wire cutting step performed during the step of forming the bump, the wire protruding from the tip end of a capillary is bent in the lateral direction to form a bent part, and then the bent part is bonded to the bump, thus completing the first bonding process; after which the wire is bonded to the interconnect wiring, thus completing the second bonding process.

Abstract: A wire bonding apparatus equipped with a chip heating assembly which is installed above a heater block that contains heaters so as to heat the chip portion of a device such as a semiconductor device, and a cooling pipe which is installed in the heater block so as to cool the heater block. The temperature of the bonding surface of the device is maintained by the chip heating assembly at a temperature that allows bonding to be executed while the heater block is cooled by cooling water or a cooling air draft that flows through the cooling pipe so that the temperature of the heater block is maintained at a low temperature that cause no softening of the resin substrate of the device.

Abstract: A wire bonding apparatus equipped with a chip heating assembly which is installed above a heater block that contains heaters so as to heat the chip portion of a device such as a semiconductor device, and a cooling pipe which is installed in the heater block so as to cool the heater block. The temperature of the bonding surface of the device is maintained by the chip heating assembly at a temperature that allows bonding to be executed while the heater block is cooled by cooling water or a cooling air draft that flows through the cooling pipe so that the temperature of the heater block is maintained at a low temperature that cause no softening of the resin substrate of the device.