Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.