Abstract: An illuminating apparatus 1 includes a light source 10 and a brightness controller 20. The brightness controller determines a fluctuation amplitude according to a 1/f power spectral model as a function of a fluctuation frequency that is selected to agree with one of human brain wave frequencies, sets the fluctuation amplitude as a brightness modulation amplitude, and modulates brightness of the light source by the brightness modulation amplitude at the fluctuation frequency.

Abstract: An illuminating apparatus 1 includes a first light source 10 to output white light, having a first light emitting diode 11 to emit blue light and a first phosphor layer 12 containing blue excited phosphors M1 that emit light when excited by the blue light from the first light emitting diode 11 and a second light source 20 to output white light, having a second light emitting diode 21 to emit blue light, a second phosphor layer 22 containing blue excited phosphors M2 that emit light when excited by the blue light from the second light emitting diode 21, and a filter layer 23 to partly block blue light that is emitted from the second light emitting diode 21 and is transmitted through the second phosphor layer 22.

Abstract: A capacitive light emitting device includes: a capacitive light emitting device 1 placed between a cathode electrode and an anode electrode opposite to each other on a light-transmitting substrate; a power supply Vin connected to the capacitive light emitting device; drive means 10 for driving the capacitive light emitting device by applying a DC voltage of the power supply between the cathode electrode and the anode electrode; and regeneration means L2, Q3 for returning electric charges to the power supply for regeneration, the electric charges being accumulated in a parasitic capacitance of the capacitive light emitting device while the capacitive light emitting device is driven.

Abstract: A semiconductor device (10) comprises a substrate (11), a semiconductor layer (12), an insulation film (13), a protective film (15), a source electrode (21), a drain electrode (22), a gate electrode (23). The semiconductor device (10) comprises a protective film (15) formed so as to cover at least an upper surface of the insulation film (13). This enables preventing aluminum contained in the source electrode (21) and the drain electrode (22) from reacting with material contained in the insulation film (13). Accordingly, the increase of the resistance of the electrode and the increase of current collapse are prevented. Accordingly, the semiconductor device (10) has a satisfactory electric performance characteristics.

Abstract: A method of manufacturing a silicon carbide semiconductor element by using a chemical vapor growth method is provided. The method includes supplying a source gas comprising silicon and carbon and an impurity radical on a substrate so as to form a silicon carbide layer on the substrate, the silicon carbide layer including silicon carbide and an impurity that binds covalently to the silicon carbide.

Abstract: A semiconductor device (10) comprises a substrate (11), a semiconductor layer (12), an insulation film (13), a protective film (15), a source electrode (21), a drain electrode (22), a gate electrode (23). The semiconductor device (10) comprises a protective film (15) formed so as to cover at least an upper surface of the insulation film (13). This enables preventing aluminum contained in the source electrode (21) and the drain electrode (22) from reacting with material contained in the insulation film (13). Accordingly, the increase of the resistance of the electrode and the increase of current collapse are prevented. Accordingly, the semiconductor device (10) has a satisfactory electric performance characteristics.

Abstract: A PIN photodiode comprising a P-type layer, an N-type layer, and an I-type layer provided between said, P-type layer and said N-type layer, wherein a junction surface between said I-type layer and said N-type layer is formed by joining a high specific resistance wafer preformed as said I-type layer to a high concentration N-type wafer preformed as said N-type layer. The thickness of said high specific resistance wafer has been adjusted in accordance with the peak value of the wavelength of light rays to be accepted. Therefore, N+ carriers do not exist in the I-type layer and the thickness of the I-type layer can be freely defined, causing the frequency characteristic and the wavelength sensitivity characteristic to be satisfying.