Abstract: An aspect of an antenna apparatus according to the present invention is provided with a conductor plate, radiating elements disposed to face the conductor plate and partially short-circuited to the conductor plate, a feeding terminal provided on the conductor plate, and a feeding path connecting the feeding terminal and a feeding portion of the radiating elements to each other.

Abstract: A nonreciprocal circuit device includes a metal lower case made of magnetic metal, a resin terminal case, a central electrode assembly, a metal upper case made of magnetic metal, a permanent magnet, and an electric-circuit-component assembly. The electric-circuit-component assembly is disposed on a side of the permanent magnet, and is formed such that a coil and a capacitor are mounted on a substrate. The electric-circuit-component assembly is disposed in parallel to the thickness direction of the permanent magnet so as to be below the surface of the permanent magnet, and has a portion overlapping with the permanent magnet.

Abstract: A nonreciprocal circuit device includes a metal lower case made of magnetic metal, a resin terminal case, a central electrode assembly, a metal upper case made of magnetic metal, a permanent magnet, and an electric-circuit-component assembly. The electric-circuit-component assembly is disposed on a side of the permanent magnet, and is formed such that a coil and a capacitor are mounted on a substrate. The electric-circuit-component assembly is disposed in parallel to the thickness direction of the permanent magnet so as to be below the surface of the permanent magnet, and has a portion overlapping with the permanent magnet.

Abstract: The magnetostatic wave device comprises a single crystal substrate made of Gd.sub.3 Ga.sub.5 O.sub.12, a magnetic garnet single crystal film provided on the single crystal substrate and at least one transducer provided on the magnetic garnet single crystal film. The magnetic garnet single crystal film has {111} plane and is made of a material expressed by the formula (YR.sub.1).sub.3 (FeR.sub.2).sub.5 O.sub.12, where R.sub.1 is at least one element selected from La, Bi, Lu and Gd, R.sub.2 is at least one element selected from Ga, Al, In and Sc and Y and Fe are the main components with respect to R.sub.1 and R.sub.2. In the magnetostatic wave device, a DC magnetic field is applied to the magnetic garnet single crystal film so that a magnetostatic surface wave propagates on the magnetic garnet single crystal film in a direction of <110> axis on {111} plane of the magnetic garnet single crystal film.

Abstract: A magnetostatic-wave device includes a dielectric substrate on which parallel first electrically conductive lines are formed. A magnetostatic-wave device formed of a gadolinium-gallium-garnet (GGG) substrate on which yttrium-iron-garnet (YIG) thin films are formed is disposed on the first electrically conductive lines. Crossed second electrically conductive lines are formed on a YIG thin film. Lands are formed at both ends of these electrically conductive lines and are connected to each other with bonding wire to form one electrically conductive line. Input and output ends are formed between both ends of this electrically conductive line and the ground.

Abstract: A signal-to-noise enhancer 10 includes a first 90 degree hybrid set 20. A first output end of the first 90 degree hybrid set 20 is connected to an input end of a limiter used a magnetostatic wave element 62a utilized the magnetostatic surface wave mode. Also, a second output end of the first 90 degree hybrid set 20 is connected to an input end of a filter used a magnetostatic wave element 62b similar to the magnetostatic wave element 62a in structure, via a resistor 32 as a first attenuator. Furthermore, an output end of the limiter is connected to a first input end of a second 90 degree hybrid set 40 via a resistor 52 as a second attenuator. Also, an output end of the filter is connected to a second input end of the second 90 degree hybrid set 40.