Patents by Inventor Toshihura Furukawa

Toshihura Furukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DC or AC electric field assisted anneal
    Patent number: 6822311
    Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
    Type: Grant
    Filed: April 15, 2003
    Date of Patent: November 23, 2004
    Assignee: International Business Machines Corporation
    Inventors: Arne W. Ballantine, John J. Ellis-Monaghan, Toshihura Furukawa, Jeffrey D. Gilbert, Glenn R. Miller, James A. Slinkman
  • DC or AC electric field assisted anneal
    Publication number: 20030201515
    Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
    Type: Application
    Filed: April 15, 2003
    Publication date: October 30, 2003
    Applicant: International Business Machines Corporation
    Inventors: Arne W. Ballantine, John J. Ellis-Monaghan, Toshihura Furukawa, Jeffrey D. Gilbert, Glenn R. Miller, James A. Slinkman
  • DC or AC electric field assisted anneal
    Patent number: 6552411
    Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: April 22, 2003
    Assignee: International Business Machines Corporation
    Inventors: Arne W. Ballantine, John J. Ellis-Monaghan, Toshihura Furukawa, Jeffrey D. Gilbert, Glenn R. Miller, James A. Slinkman
  • DC or AC electric field asssisted anneal
    Publication number: 20010026999
    Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
    Type: Application
    Filed: March 16, 2001
    Publication date: October 4, 2001
    Applicant: International Business Machines Corporation
    Inventors: Arne W. Ballantir, John J. Ellis-Monaghan, Toshihura Furukawa, Jeffrey D. Gilbert, Glenn R. Miller, James A. Slinkman