Patents by Inventor Toshiji Taiji
Toshiji Taiji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9478547Abstract: Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).Type: GrantFiled: June 3, 2015Date of Patent: October 25, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Hiroyuki Kunishima, Masashige Moritoki, Toshiji Taiji, Youichi Yamamoto
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Patent number: 9337093Abstract: The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.Type: GrantFiled: July 14, 2011Date of Patent: May 10, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Daisuke Oshida, Ippei Kume, Makoto Ueki, Manabu Iguchi, Naoya Inoue, Takuya Maruyama, Toshiji Taiji, Hirokazu Katsuyama
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Publication number: 20150357335Abstract: Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).Type: ApplicationFiled: June 3, 2015Publication date: December 10, 2015Inventors: Hiroyuki Kunishima, Masashige Moritoki, Toshiji Taiji, Youichi Yamamoto
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Patent number: 8329584Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.Type: GrantFiled: June 2, 2011Date of Patent: December 11, 2012Assignee: Renesas Electronics CorporationInventors: Toshiyuki Takewaki, Manabu Iguchi, Daisuke Oshida, Hironori Toyoshima, Masayuki Hiroi, Takuji Onuma, Hiroaki Nanba, Ichiro Honma, Mieko Hasegawa, Yasuaki Tsuchiya, Toshiji Taiji, Takaharu Kunugi
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Publication number: 20120015517Abstract: The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.Type: ApplicationFiled: July 14, 2011Publication date: January 19, 2012Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Daisuke OSHIDA, Ippei KUME, Makoto UEKI, Manabu IGUCHI, Naoya INOUE, Takuya MARUYAMA, Toshiji TAIJI, Hirokazu KATSUYAMA
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Publication number: 20110230051Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.Type: ApplicationFiled: June 2, 2011Publication date: September 22, 2011Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Toshiyuki TAKEWAKI, Manabu IGUCHI, Daisuke OSHIDA, Hironori TOYOSHIMA, Masayuki HIROI, Takuji ONUMA, Hiroaki NANBA, Ichiro HONMA, Mieko HASEGAWA, Yasuaki TSUCHIYA, Toshiji TAIJI, Takaharu KUNUGI
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Patent number: 7955980Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.Type: GrantFiled: August 18, 2009Date of Patent: June 7, 2011Assignee: Renesas Electronics CorporationInventors: Toshiyuki Takewaki, Manabu Iguchi, Daisuke Oshida, Hironori Toyoshima, Masayuki Hiroi, Takuji Onuma, Hiroaki Nanba, Ichiro Honma, Mieko Hasegawa, Yasuaki Tsuchiya, Toshiji Taiji, Takaharu Kunugi
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Publication number: 20090305496Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.Type: ApplicationFiled: August 18, 2009Publication date: December 10, 2009Applicant: NEC ELECTRONICS CORPORATIONInventors: Toshiyuki TAKEWAKI, Manabu IGUCHI, Daisuke OSHIDA, Hironori TOYOSHIMA, Masayuki HIROI, Takuji ONUMA, Hiroaki NANBA, Ichiro HONMA, Mieko HASEGAWA, Yasuaki TSUCHIYA, Toshiji TAIJI, Takaharu KUNUGI
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Patent number: 7601640Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.Type: GrantFiled: December 10, 2007Date of Patent: October 13, 2009Assignee: NEC Electronics CorporationInventors: Toshiyuki Takewaki, Manabu Iguchi, Daisuke Oshida, Hironori Toyoshima, Masayuki Hiroi, Takuji Onuma, Hiroaki Nanba, Ichiro Honma, Mieko Hasegawa, Yasuaki Tsuchiya, Toshiji Taiji, Takaharu Kunugi
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Publication number: 20080160750Abstract: A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.Type: ApplicationFiled: December 10, 2007Publication date: July 3, 2008Applicant: NEC ELECTRONICS CORPORATIONInventors: Toshiyuki TAKEWAKI, Manabu Iguchi, Daisuke Oshida, Hironori Toyoshima, Masayuki Hiroi, Takuji Onuma, Hiroaki Nanba, Ichiro Honma, Mieko Hasegawa, Yasuaki Tsuchiya, Toshiji Taiji, Takahara Kunugi
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Patent number: 7229570Abstract: The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.Type: GrantFiled: July 11, 2003Date of Patent: June 12, 2007Assignee: NEC Electronics CorporationInventors: Toshiji Taiji, Yasuaki Tsuchiya, Tomoyuki Ito, Kenichi Aoyagi, Shin Sakurai
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Publication number: 20040216389Abstract: This invention relates to a chemical mechanical polishing slurry comprising polishing grains, ammonium nitrate as an oxidizing agent, 1,2,4-triazole as a polishing promoter for a copper metal film and water and having a pH within a range of 3 to 4. The polishing slurry is suitable for forming a damascene copper-based metal interconnection comprising a tantalumr-based metal as a barrier metal film material.Type: ApplicationFiled: February 13, 2004Publication date: November 4, 2004Applicants: NEC ELECTRONICS CORPORATION, TOKYO MAGNETIC PRINTING CO., LTDInventors: Yasuaki Tsuchiya, Toshiji Taiji, Tetsuyuki Itakura, Shin Sakurai, Kenichi Aoyagi, Tomoyuki Ito
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Publication number: 20040021125Abstract: The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.Type: ApplicationFiled: July 11, 2003Publication date: February 5, 2004Applicants: NEC ELECTRONICS CORPORATION, TOKYO MAGNETIC PRINTING CO., LTD.Inventors: Toshiji Taiji, Yasuaki Tsuchiya, Tomoyuki Ito, Kenichi Aoyagi, Shin Sakurai