Abstract: An image processing method includes: acquiring image data; detecting a face region including at least a part of a face of a person from the image data; setting a first region used for detection of an eye of the person in the face region having been detected; setting a second region estimated to include a pupil or an iris by narrowing the first region based on a predetermined criterion; detecting pupil information indicating the pupil or the iris in the second region; and outputting the pupil information having been detected.

Abstract: A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M.

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.

Abstract: According to an exemplary embodiment, a method for manufacturing a tubular body is provided. The method includes maintaining at about 15° C. or lower a heat-curable solution containing a polyimide precursor solution in which a conductive agent having an acidic group is dispersed; coating the heat-curable solution maintained at about 15° C. or lower on a core body to form a coating film of the heat-curable solution, and curing the coating film by heating to obtain a tubular body.

Abstract: A method of manufacturing a thermosetting solution includes a process for preparing a solution having a conductive material having an acid group dispersed in the solution, preparing a polyimide precursor solution, and mixing the solution having the conductive material dispersed therein and the polyimide precursor solution, and stirring the mixed solution using a stirring tank in which a stirring blade is disposed and the minimum gap between the inner surface of the stirring tank and the stirring blade is from about 1 mm to about 15 mm.

Abstract: According to an exemplary embodiment, a method for manufacturing a tubular body is provided. The method includes maintaining at about 15° C. or lower a heat-curable solution containing a polyimide precursor solution in which a conductive agent having an acidic group is dispersed; coating the heat-curable solution maintained at about 15° C. or lower on a core body to form a coating film of the heat-curable solution, and curing the coating film by heating to obtain a tubular body.

Abstract: An image pickup apparatus includes a plurality of pixels and increasing portions increasing charges stored in the pixels, wherein the frequency of increasing the charges is controlled every group of at least one pixel in response to luminance of light incident upon the pixels by the increasing portions.

Abstract: An image sensor according to the present invention includes a charge forming portion forming charges by photoelectric conversion and a charge transfer region including a charge increasing region for increasing the amount of charges. The image sensor is so formed as to increase dark current generated in at least part of the charge forming portion and the charge transfer region in the charge increasing region for calculating an increasing ratio for the charges on the basis of an output value resulting from a charge signal of the increased dark current.

Abstract: An image sensor includes a carrier generating portion having a photoelectric conversion function, a voltage conversion portion for converting signal charges to a voltage, a charge increasing portion for increasing carriers generated by the carrier generating portion and a light shielding film formed to cover at least one part of the charge increasing portion.

Abstract: An image sensor includes a plurality of pixels having a plurality of color sensitivity characteristics and a mixing portion for mixing charges stored in a plurality of the pixels having the same color sensitivity characteristic provided adjacent to a plurality of the pixels having the same color sensitivity characteristic.

Abstract: An image pickup apparatus includes a plurality of pixels and increasing portions increasing charges stored in the pixels, wherein the frequency of increasing the charges is controlled every group of at least one pixel in response to luminance of light incident upon the pixels by the increasing portions.

Abstract: A solid-state image pickup device includes a plurality of optical sensors having different photosensitivity, wherein signals of the optical sensors having prescribed photosensitivity are read in response to object information.