Abstract: In a pattern forming method, a first L & S pattern is formed on a wafer; a first protective layer, a second L & S pattern having a perpendicular periodic direction to that of the first L & S pattern, and a photoresist layer are formed to cover the first L & S pattern; a third pattern having first apertures is formed in the photoresist layer to be overlapped with a part of the second L & S pattern; second apertures are formed in the first protective layer via the first apertures; and a part of the first L & S pattern is removed via the second apertures. Accordingly, a pattern including a non-periodic portion finer than a resolution limit of an exposure apparatus is formed.

Abstract: In a pattern forming method, a first L & S pattern is formed on a wafer; a first protective layer, a second L & S pattern having a perpendicular periodic direction to that of the first L & S pattern, and a photoresist layer are formed to cover the first L & S pattern; a third pattern having first apertures is formed in the photoresist layer to be overlapped with a part of the second L & S pattern; second apertures are formed in the first protective layer via the first apertures; and a part of the first L & S pattern is removed via the second apertures. Accordingly, a pattern including a non-periodic portion finer than a resolution limit of an exposure apparatus is formed.

Abstract: In order to reduce mask pattern transfer error caused by expansion of the mask substrate during transferring the circuit pattern onto the photosensitive substrate, a mask substrate is loosely supported on a plurality of mounts on the mask stage so that the mask substrate can freely expand in response to changes in its temperature. A measuring instrument (such as a temperature sensor or an interferometer) is used to measure a value representing the expansion amount of the mask substrate. Alignment and positioning of the mask substrate and the photosensitive substrate is adjusted in response to the expansion amount of the reticle, based on the measured value.

Abstract: In order to reduce mask pattern transfer error caused by expansion of the mask substrate during transferring the circuit pattern onto the photosensitive substrate, a mask substrate is loosely supported on a plurality of mounts on the mask stage so that the mask substrate can freely expand in response to changes in its temperature. A measuring instrument (such as a temperature sensor or an interferometer) is used to measure a value representing the expansion amount of the mask substrate. Alignment and positioning of the mask substrate and the photosensitive substrate is adjusted in response to the expansion amount of the reticle, based on the measured value.

Abstract: A lithography system comprises an information gathering apparatus for gathering specific information set in each of plural exposure apparatus and variable according to operating conditions of each of the plural exposure apparatus in response to masks to be used in each of the plural exposure apparatus and substrates supplied thereto, or information obtained by measuring or evaluating the process state of a substrate processed by each of the plural exposure apparatus, independently from the control by a process control apparatus for controlling supply of the masks, supply of plural substrates to be exposed in each of the plural exposure apparatus, and operating conditions of each of the plural exposure apparatus in response to the masks and substrates supplied thereto.

Abstract: An exposure apparatus for exposing a pattern on a substrate to be exposed having a predetermined mark formed thereon includes a stage for supporting the substrate to be exposed thereon, moving means capable of moving the stage in a direction along a predetermined surface, mark detecting means for applying a light beam to the substrate to be exposed and detecting the predetermined mark, position detecting means outputting a position signal conforming to the position of the stage on the predetermined surface, producing means for detecting information regarding rotation of the stage along the predetermined surface and producing an information signal, and correcting means for correcting on the basis of the information signal the position signal when the mark detecting means detects the predetermined mark.

Abstract: in the production of semiconductor devices, for example, high-accuracy, high-speed alignment of different exposure areas of a wafer with respect to a reticle is achieved by the use, for each exposure area, of a predetermined number of sampling areas that are selected so as to be adjacent to a selected exposure area. A position detector produces position information signals regarding the positions of a plurality of sampling areas and stores the position information signals in a memory. Design data indicating positions of a plurality of sampling areas are also stored in memory. A calculator calculates a correction value for the selected exposure area on the basis of the position information signals and the design data for the selected sampling areas. The wafer is then displaced relative to the reticle in accordance with the correction value and design data for the selected exposure area.

Abstract: A method for successive alignment of each of a plurality of chip patterns regularly arranged on a substrate to a reference position comprises moving the substrate so as to successively make selected chip patterns correspond to the reference position in accordance with design data representative of the positions of the selected chip patterns, measuring the positions of the selected chip patterns when made to correspond to the reference position, determining on the basis of the measured positions, coefficients of an operational equation so that the sum of the square of deviations between positions of the selected chip patterns determined by use of the operational equation and positions of the selected chip patterns represented by design data may be minimum, determining positions corresponding to the plurality of chip patterns on the basis of the operational equation, and moving the substrate in accordance with the determined positions.