Abstract: A light-emitting device, an electronic device, or a lighting device with low power consumption and high reliability is provided. The light-emitting device includes a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element. The first to fourth light-emitting elements include the same EL layer between an anode and a cathode. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer contains a fluorescent substance. The peak wavelength of an emission spectrum of the fluorescent substance in a toluene solution of the fluorescent substance is 440 nm to 460 nm, preferably 440 nm to 455 nm. The second light-emitting layer contains a phosphorescent substance. The first light-emitting element exhibits blue emission. The second light-emitting element exhibits green emission. The third light-emitting element exhibits red emission.

Abstract: A dry etching system capable of suppressing the effect of reaction products generated in a reaction chamber during an etching process to the edge profile of an etch object such as a semiconductor wafer. This system includes a reaction chamber in which an etching action is performed, a plasma generator for generating plasma in the reaction chamber, a holder for holding an etch object in the reaction chamber, a detector for detecting the quantity of a reaction product contained in the plasma, and a controller for controlling the amount of the reaction products contained in the plasma to be at least one specific value. The etch object is etched by the action of etching species contained in the plasma. The detector detects, for example, the intensity of light emission from the plasma at a specific wavelength.

Abstract: A thin film capacitor which comprises a lower electrode, a dielectric film and an upper electrode is fabricated on a substrate. The lower electrode is not provided by etching process using a photoresist mask, but it is provided by providing an aperture thorough an insulating layer deposited on the substrate, and depositing a conductive film on the bottom of the aperture and connected to a lower interconnection provided on the bottom of the aperture. Consequently, no convex protrusion is found at the processed edge of the lower electrode.