Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A optical disc drive is disclosed. The optical disc drive includes a housing and a tray configured to accommodate a disc therein. The optical disc drive also includes an automatic return-type eject switch, a drive controller, and an eject controller. Mounted in the housing, the automatic return-type eject switch is configured to generate an eject signal. In response to the eject signal, the drive controller ejects the tray. In response to the eject signal, the eject controller supplies an electric power to the optical disc drive, and transmits a pseudo eject signal to the drive controller to eject the tray by way of a line through which the eject signal has been transferred after a predetermined time period from the supply of the electric power has lapsed.

Abstract: A processing apparatus subjects an object to be processed W to a heat process. The processing apparatus comprises: a processing vessel 22 capable of containing a object to be processed W; a coil part for induction heating 104 that is disposed outside the processing vessel 22; a radiofrequency power source 110 configured to apply a radiofrequency power to the coil part for induction heating 104; a gas supply part 90 configured to introduce a gas into the processing vessel 22; a holding part 24 configured to hold the object to be processed W in the processing vessel 22; and a induction heating element N that is inductively heated by a radiofrequency from the coil part for induction heating 104 so as to heat the object to be processed W. The induction heating element N is provided with a cut groove for controlling a flow of an eddy current generated on the induction heating element.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Abstract: A plasma processing apparatus of the batch type includes a tubular process container having a closed end and an open end opposite to each other, and a process field for accommodating target substrates, the process container including a tubular insulating body. The apparatus further includes a holder configured to hold the target substrates at intervals, a loading mechanism configured to load and unload the holder into and from the process container, and a lid member connected to the loading mechanism and configured to airtightly close the open end. A first electrode is disposed at the closed end of the process container, and a second electrode is disposed at the lid member, to constitute a pair of parallel-plate electrodes. An RF power supply is connected to one of the first and second electrodes and configured to apply an RF power for plasma generation.

Abstract: A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

Abstract: A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

Abstract: A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A plasma processing device able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and includes a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

Abstract: The invention comprises a lower electrode which is disposed in a processing chamber and holds a wafer W, and an exhaust ring mechanism disposed between the lower electrode and an inner wall of the processing chamber, wherein the exhaust ring mechanism has an exhaust ring, and a magnetic field forming section which forms a magnetic field parallel to the principal plane of the exhaust ring, and thereby preventing plasma leak from a plasma region to a non-plasma region by the formed magnetic field, and a plasma processing apparatus using the exhaust ring mechanism.

Abstract: In a vehicle rear body structure in which a muffler is disposed below a rear cross member disposed to extend transversely below a rear part of the body of a vehicle, a lower end portion 10 of the rear cross member 7 extends downwardly to substantially the same height of that of a lower end portion 4c of a rear bumper face 4a disposed rearward of the rear cross member. Accordingly, it is possible to prevent the generation of heat deformation by protecting from heat related effects from a muffler a lower end portion of a rear bumper which tends to easily heat deform.

Abstract: The wheel suspension system is dimensioned and positioned so as to be contained within a fore-and-aft profile of the engine assembly so that the wheel suspension system which is considered to be too rigid to define a crush zone in case of a vehicle crash is contained within the profile of the engine assembly, and would not in any way reduce the crush zone of the vehicle body which is effective in absorbing the impact energy of a vehicle crash. A steering gear may also be too rigid to define a crush zone. The engine assembly normally projects toward the passenger compartment at upper and lower parts thereof. Therefore, to avoid the steering mechanism from reducing the effective crush zone, the steering gear unit may be placed so as to oppose the recess thus defined in the engine assembly.

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.