Abstract: A sensor device includes: a sensor element configured to detect a physical quantity in a time-series manner; a data processing part configured to perform filtering on time-series data detected during a predetermined period by the sensor element to extract time-series data having a predetermined frequency component, and compare the extracted time-series data with a predetermined threshold value to determine one or a plurality of significant sections within the predetermined period, the extracted time-series data exceeding the threshold value in each of the significant sections; and a communication part configured to arrange and wirelessly transmit time-series data of each of the significant sections among the time-series data detected during the predetermined period by the sensor element.

Abstract: A sensor device includes: a sensor element configured to detect a physical quantity in a time-series manner; a data processing part configured to perform filtering on time-series data detected during a predetermined period by the sensor element to extract time-series data having a predetermined frequency component, and compare the extracted time-series data with a predetermined threshold value to determine one or a plurality of significant sections within the predetermined period, the extracted time-series data exceeding the threshold value in each of the significant sections; and a communication part configured to arrange and wirelessly transmit time-series data of each of the significant sections among the time-series data detected during the predetermined period by the sensor element.

Abstract: A sensor node for use in a wireless sensor network, includes: a sensor element configured to detect a physical quantity in a time-series manner; a data processing part configured to Fourier-transform time-series data detected by the sensor element and extract a plurality of feature quantities representing features of an obtained spectrum; and a communication part configured to wirelessly transmit only the plurality of feature quantities, rather than transmitting the time-series data.

Abstract: A sensor node includes: a sensor part configured to sense information from a sensor target; a calculation part configured to digitize at least one data of a portion or all of the sensed sensor information and calculate the digitized data to abstracted data indicating a quantity of state; and an internal communication part configured to transmit the abstracted data to a controller node via a network.

Abstract: The semiconductor device includes a substrate, a semiconductor layer which is formed on the substrate and includes a light emitting layer, and a diffraction/scattering film for diffracting or scattering light generated at the light emitting layer. The diffraction/scattering film is formed between the light emitting layer and the substrate, has a side surface slanted with respect to a film thickness direction thereof, and has a composition gradient in the film thickness direction.

Abstract: A semiconductor device includes a semiconductor chip, a die pad including an obverse surface on which the semiconductor chip is bonded, a lead spaced apart from the die pad, a bonding wire electrically connecting the semiconductor chip and the lead to each other, and a resin package that seals the semiconductor chip and the bonding wire. The bonding wire includes a first bond portion press-bonded to the semiconductor chip by ball bonding, a second bond portion press bonded to the lead by stitch bonding, a landing portion extending from the second bond portion toward the die pad and formed in contact with an obverse surface of the lead, and a loop extending obliquely upward from the landing portion toward the semiconductor chip.

Abstract: The semiconductor device includes a substrate, a semiconductor layer which is formed on the substrate and includes a light emitting layer, and a diffraction/scattering film for diffracting or scattering light generated at the light emitting layer. The diffraction/scattering film is formed between the light emitting layer and the substrate, has a side surface slanted with respect to a film thickness direction thereof, and has a composition gradient in the film thickness direction.

Abstract: A semiconductor device includes a semiconductor chip, a die pad including an obverse surface on which the semiconductor chip is bonded, a lead spaced apart from the die pad, a bonding wire electrically connecting the semiconductor chip and the lead to each other, and a resin package that seals the semiconductor chip and the bonding wire. The bonding wire includes a first bond portion press-bonded to the semiconductor chip by ball bonding, a second bond portion press bonded to the lead by stitch bonding, a landing portion extending from the second bond portion toward the die pad and formed in contact with an obverse surface of the lead, and a loop extending obliquely upward from the landing portion toward the semiconductor chip.

Abstract: A plasma processing apparatus includes a first dielectric that is connected to a microwave generating unit, the first dielectric having a section that extends along a surface of a rectangular sample, and that makes an electric field strength distribution of the microwaves generated from the microwave generating unit substantially uniform along the surface of the sample; a slot plate that is provided below the first dielectric and in which a plurality of first slots are formed, the slot plate retaining or further enhancing the uniformity of the electric field strength distribution of the microwaves in the first dielectric; a second dielectric that is provided below the slot plate and that retains or further enhances the uniformity of the electric field strength distribution of the microwaves supplied from the slot plate; and a processing unit that processes the sample using a plasma generated in the reaction vessel by the microwaves.

Abstract: The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing a slicing loss.

Abstract: A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

Abstract: In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

Abstract: A plasma processing apparatus for performing plasma processing with respect to a sample in a reaction vessel includes a first dielectric that is connected to a microwave generating means, the first dielectric having a section that extends along a surface of a sample to be processed that is rectangular, and that makes an electric field strength distribution of the microwaves generated from the microwave generating means substantially uniform along the surface of the sample to be processed; a slot plate that is provided below the first dielectric and in which a plurality of first slots are formed, the slot plate retaining or further enhancing the uniformity of the electric field strength distribution of the microwaves in the first dielectric; a second dielectric that is provided below the slot plate and that retains or further enhances the uniformity of the electric field strength distribution of the microwaves supplied from the slot plate; and processing means that processes the sample using a plasma generated

Abstract: A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

Abstract: An excimer laser gas in a laser tube 2 is excited by a microwave introduced from awaveguide 1, and electric field concentration occurs in a slit-shaped gap 3 provided in a plate member 11c, causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.

Abstract: In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots (10) are formed at a predetermined pitch in a long end face (H plane) of each waveguide (1) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).

Abstract: A plasma is excited uniformly as a whole over the length of each slot. A laser oscillating apparatus is designed to excite a laser gas in a laser tube (2) by introducing electromagnetic waves into the laser tube through a plurality of slots (10) formed in a waveguide wall and generate a laser beam by resonating the light generated from the laser gas. A least one electrode (13) is placed near the slot (10). By giving a predetermined current density to the electrode (13), the intensity distribution of light generated from the laser gas above the slot (10) is controlled.

Abstract: The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing slicing loss.

Abstract: A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

Abstract: A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.