Abstract: A liquid ejecting head including a diaphragm constituting a portion of a wall surface of a pressure chamber that accommodates a liquid, and a piezoelectric element that vibrates the diaphragm. In the liquid ejecting head, the diaphragm includes a plurality of layers, and the plurality of layers include a compressive film that has compressive stress and a tensile film that has tensile stress. The compressive film and the tensile film are two layers adjacent to each other that have a largest tension difference among the plurality of layers, and an absolute value of the tension difference between the compressive film and the tensile film is 400 [N/m] or smaller.

Abstract: A liquid ejecting head including a diaphragm constituting a portion of a wall surface of a pressure chamber that accommodates a liquid, and a piezoelectric element that vibrates the diaphragm. In the liquid ejecting head, the diaphragm includes a plurality of layers, and d/D?0.25 is satisfied where D is a thickness of the diaphragm and d is a distance between a neutral axis of the diaphragm and an interface between two adjacent layers in which a tension difference is the largest in the plurality of layers.

Abstract: A liquid ejecting head including a diaphragm constituting a portion of a wall surface of a pressure chamber that accommodates a liquid, and a piezoelectric element that vibrates the diaphragm. In the liquid ejecting head, the diaphragm includes a plurality of layers, and the plurality of layers include a compressive film that has compressive stress and a tensile film that has tensile stress. The compressive film and the tensile film are two layers adjacent to each other that have a largest tension difference among the plurality of layers, and an absolute value of the tension difference between the compressive film and the tensile film is 400 [N/m] or smaller.

Abstract: A liquid ejecting head including a diaphragm constituting a portion of a wall surface of a pressure chamber that accommodates a liquid, and a piezoelectric element that vibrates the diaphragm. In the liquid ejecting head, the diaphragm includes a plurality of layers, and d/D?0.25 is satisfied where D is a thickness of the diaphragm and d is a distance between a neutral axis of the diaphragm and an interface between two adjacent layers in which a tension difference is the largest in the plurality of layers.

Abstract: A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

Abstract: A method of manufacturing a piezoelectric element includes a piezoelectric layer forming step of sequentially and repeatedly performing a heat treatment step of applying a piezoelectric material containing lead to a lower electrode film at a relative humidity in the range of 30% to 50% Rh and then performing a heat treatment to form a piezoelectric precursor film and a crystallization step of firing the piezoelectric precursor film to form a piezoelectric film on the lower electrode film, thereby forming a piezoelectric layer.

Abstract: A method of manufacturing a piezoelectric element includes a piezoelectric layer forming step of sequentially and repeatedly performing a heat treatment step of applying a piezoelectric material containing lead to a lower electrode film at a relative humidity in the range of 30% to 50% Rh and then performing a heat treatment to form a piezoelectric precursor film and a crystallization step of firing the piezoelectric precursor film to form a piezoelectric film on the lower electrode film, thereby forming a piezoelectric layer.

Abstract: A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

Abstract: A method of manufacturing an actuator device configured to prevent separation of a vibration plate and to enhance durability and reliability, and a liquid-jet apparatus are provided. The method includes the steps of forming a vibration plate on one surface of a substrate, and forming a piezoelectric element having a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate. The step of forming a vibration plate at least includes an insulation film forming step of forming an insulation film made of zirconium oxide by forming a zirconium layer on the one surface side of the substrate in accordance with a sputtering method and subjecting the zirconium layer to thermal oxidation by inserting the substrate formed with the zirconium layer to a thermal oxidation furnace heated to a temperature greater than or equal to 700° C. at a speed greater than or equal to 200 mm/min.

Abstract: A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

Abstract: A step of forming a vibration plate includes a step of forming an insulation film in order to cause the surface roughness Ra of the insulation film to be in the range of 1 nm to 3 nm: the insulation film being made of zirconia which has been obtained by depositing a zirconium layer, and accordingly by the thermally oxidizing the zirconium layer at a predetermined temperature, and the insulation film constituting the uppermost surface of the vibration plate. In addition, a step of forming a piezoelectric elements includes: a step of applying titanium (Ti) onto a lower electrode by use of a sputtering method, and of forming a seed titanium layer thereon; and a step of forming a piezoelectric precursor film by applying a piezoelectric material onto the seed titanium layer, and of forming a piezoelectric layer by baking, and crystallizing, the piezoelectric precursor layer.

Abstract: A method of manufacturing an actuator device configured to prevent separation of a vibration plate and to enhance durability and reliability, and a liquid-jet apparatus are provided. The method includes the steps of forming a vibration plate on one surface of a substrate, and forming a piezoelectric element having a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate. The step of forming a vibration plate at least includes an insulation film forming step of forming an insulation film made of zirconium oxide by forming a zirconium layer on the one surface side of the substrate in accordance with a sputtering method and subjecting the zirconium layer to thermal oxidation by inserting the substrate formed with the zirconium layer to a thermal oxidation furnace heated to a temperature greater than or equal to 700° C. at a speed greater than or equal to 200 mm/min.

Abstract: An object of the present invention is to provide a method of manufacturing an actuator device, and a liquid jet head, which can improve characteristics of a piezoelectric layer constituting piezoelectric elements and can stabilize the characteristics of the piezoelectric layer. A step of forming a vibration plate includes a step of forming an insulation film in order to cause the surface roughness Ra of the insulation film to be in the range of 1 nm to 3 nm: the insulation film being made of zirconia which has been obtained by depositing a zirconium layer, and accordingly by the thermally oxidizing the zirconium layer at a predetermined temperature, and the insulation film constituting the uppermost surface of the vibration plate.

Abstract: A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

Abstract: In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.

Abstract: In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.

Abstract: In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.

Abstract: In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.