Abstract: On a film where an exposure material coating has been formed in a exposure pattern formation region on a film base material, a colored firing material, colored light-curable material, or colored ink is applied to at least one of two widthwise side edges to form a side part application coating, which is irradiated with laser light by an alignment mark formation unit to form an alignment mark. The alignment mark is then used to detect film meandering and adjust the positions of masks. This makes it easy to form the alignment mark and detect the alignment mark thus formed and makes it possible to accurately correct for meandering of a film and stably expose the film in the process of continuous exposure of a film where an exposure material coating has been formed in a exposure pattern formation region on a film base material.

Abstract: An alignment correction method includes: the step of detecting coordinates of a first observation point 14 and a second observation point 15 set in advance on a substrate to be exposed 1 that is being scanned in a scanning direction A, in order to observe an alignment deviation of the substrate to be exposed 1; the step of computing a correction amount based on a deviation between the detected coordinates and a reference line set in advance according to the first observation point 14 and the second observation point 15; and the step of correcting alignment of a subsequent substrate to be exposed 1 based on the computed correction amount.

Abstract: On a film where an exposure material coating has been formed in a exposure pattern formation region on a film base material, a colored firing material, colored light-curable material, or colored ink is applied to at least one of two widthwise side edges to form a side part application coating, which is irradiated with laser light by an alignment mark formation unit to form an alignment mark. The alignment mark is then used to detect film meandering and adjust the positions of masks. This makes it easy to form the alignment mark and detect the alignment mark thus formed and makes it possible to accurately correct for meandering of a film and stably expose the film in the process of continuous exposure of a film where an exposure material coating has been formed in a exposure pattern formation region on a film base material.

Abstract: A scanning exposure apparatus uses a plurality of microlens arrays to project a mask exposure pattern onto a substrate. A CCD line camera detects an image on the substrate at this time, and using a first-layer pattern on the substrate as a reference pattern, detects whether or not the mask exposure pattern matches the reference pattern. In a case in which the patterns do not match, the microlens array is tilted from a direction that is parallel to the substrate, and the mask exposure pattern is made to match the reference pattern by using the microlens array to adjust the exposure area on the substrate. When the exposure pattern deviates from the reference pattern, it is thereby possible to detect the deviation during exposure and to prevent an exposure pattern misregistration, thereby enhancing the precision of the exposure pattern in an overlay exposure.

Abstract: An exposure apparatus and an optical member wherein impurities can be prevented from infiltrating between microlens arrays and a substrate, and microlenses can be prevented from being scratched by the impurities and by getting abnormally close to the substrate. Microlens arrays in which pluralities of microlenses are formed are arranged above a transparent substrate, and the microlens arrays are bonded and the end surfaces to a mask. Alignment mark supports are bonded to the mask at both sides of the microlens arrays, and alignment marks are formed in the surfaces of the alignment mark supports that face the substrate. The spaces between the alignment mark supports and the substrate are smaller than the spaces between the microlens arrays and the substrate.

Abstract: A method for alignment processing including making a substrate 4, coated with an aligned film, closely face the photo mask 7 having a first mask pattern group having a plurality of elongated first openings formed at a fixed array pitch and a second mask pattern group provided in parallel with the first mask pattern group and having a plurality of elongated second openings formed at the same pitch as the array pitch of the first openings and moving the substrate in a direction crossing the first and second mask pattern groups, applying P polarizations with different incidence angles ? to the first and second mask pattern groups of the photo mask, and alternately forming, on the aligned film, first and second slit alignment regions in different aligned states.

Abstract: An exposure method includes a step of moving a photomask by a predetermined distance and switching a first mask pattern group to a second mask pattern group when an exposure to a first exposure area on an object to be exposed by the first mask pattern group of the photomask formed by arranging the first and the second mask pattern groups corresponding to an exposure patterns at predetermined intervals in a conveying direction of the object to be exposed is completed, and a step of performing an exposure on the second exposure area on the object to be exposed by the second mask pattern group, in which a moving speed of the photomask is controlled so that a moving distance of the object to be exposed is longer than a moving distance of the photomask in a period of time when switching the first and the second mask pattern groups.