Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin, (C) a photoacid generator, and optionally, (D) a dissolution rate regulator. The base resin (B) is a hydroxystyrene copolymer having different acid labile groups and Mw of 3,000-300,000. The resist composition is highly sensitive to actinic radiation such as deep-UV, electron beam and X-ray, can be developed with aqueous base to form a pattern, and is thus suitable for use in a fine patterning technique.

Abstract: There is disclosed a cross-linked polymer solid electrolyte and a method of manufacturing the same. A crosslinking agent is added to a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula II; a high energy ray is irradiated to the block-graft polymer in order to crosslink the entire system; and an nonaqueous electrolytic solution is added to the block-graft polymer. There is also disclosed a composite solid electrolyte for use in a solid electrochemical element. The composite solid electrolyte includes an electrically insulating material, an alkali metal salt, a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula II, and an aprotic organic solvent.

Abstract: After forming a resist film by coating a semiconductor substrate with a resist, pattern exposure is conducted by irradiating the resist film with ArF excimer laser with a mask used. A silylation agent of 4-dimethylsiloxy-3-penten-2-one is supplied onto the surface of the resist film having been subjected to the pattern exposure, thereby forming a silylated layer in an unexposed portion of the resist film. The resist film is etched by using the silylated layer as a mask, so as to remove an exposed portion of the resist film. Thus, a resist pattern can be formed out of the resist film.

Abstract: In a silicone polymer having phenolic hydroxyl groups, the hydrogen atoms of some of the phenolic hydroxyl groups are replaced by acid labile groups of at least one type. The silicone polymer is crosslinked at some of the remaining phenolic hydroxyl groups with crosslinking groups having C--O--C linkages within a molecule and/or between molecules. The silicone polymer has a Mw of 5,000 to 50,000. A chemically amplified positive resist composition comprising the silicone polymer as a base resin has a high sensitivity and resolution so that it is suitable for fine patterning with electron beams or deep UV. Because of improved oxygen plasma etching resistance, the composition is suitable for use in the two-layer resist technique.

Abstract: Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.

Abstract: A polymer comprising recurring units of formula (1) is provided wherein some of the hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups are replaced by acid labile groups. The polymer is crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining phenolic hydroxyl groups and/or alcoholic hydroxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group and alcoholic hydroxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, letter x is 0 or a positive integer, y is a positive integer, x+y.ltoreq.5, letters p and q are positive numbers satisfying p+q=1 and 0<q/(p+1).ltoreq.0.9.

Abstract: Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.

Abstract: A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.

Abstract: The invention provides a novel polymer comprising a recurring unit of formula (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition.

Abstract: A feeder of a solid organometallic compound is obtained by filling a container up to 50-80 vol % of the total capacity of the container with stainless steel support whose pore ratio is adjusted to 50-80 vol % and then also filling it with solid granules of an organometallic compound which is solid at room temperature.

Abstract: A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin, and (C) a photoacid generator with a mixture of (1) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of less than 2 Torr at 100.degree. C. and (2) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of 2-100 Torr at 100.degree. C. The resist composition has high sensitivity to actinic radiation and high resolution, is developable with aqueous base to form a pattern without a T-top profile by PED and footing on the substrate surface, and is suitable for fine processing.

Abstract: The invention provides a high molecular weight silicone compound comprising recurring units of the general formula (1) and having a weight average molecular weight of 1,000-50,000. ##STR1## Z is a di- to hexavalent, monocyclic or polycyclic hydrocarbon group or bridged cyclic hydrocarbon group of 5-12 carbon atoms, R.sup.1 is a substituted or unsubstituted alkyl or alkenyl group of 1-8 carbon atoms, R.sup.2 is an acid labile group, m is 0 or an integer, n is an integer, satisfying m+n.ltoreq.5, x is an integer, p1 and p2 are positive numbers, q is 0 or a positive number, satisfying 0<p1/(p1+p2+q).ltoreq.0.9, 0<p2/(p1+p2+q).ltoreq.0.9, 0.ltoreq.q/(p1+p2+q).ltoreq.0.7, and p1+p2+q=1. A chemically amplified positive resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for fine patterning with electron beams or deep UV.

Abstract: An organometallic compound represented by the general formula (I) ##STR1## or the general formula (II)R-M.sup.2 -R (II)is evaporated, and then passed through the inner tube of a heat exchanger to be precipitated. The heat exchanger is then heated to re-evaporate the organometallic compound, and the re-evaporated organometallic compound is then precipitated in a filling container which is connected to said heat exchanger and cooled down to a prescribed temperature to fill the container.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polysiloxane having phenolic hydroxyl groups some of which are protected with alkoxyalkyl groups and having a weight average molecular weight of 2,000-50,000, (C) a photoacid generator, and (D) a vinyl ether group-containing compound. The composition has high sensitivity to actinic radiation, is developable with aqueous base to form a resist pattern, and lends itself to fine patterning.

Abstract: A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polyhydroxystyrene having phenolic hydroxyl groups some of which are protected with alkoxyalkyl groups and having a weight-average molecular weight of 3,000-300,000 and a dispersity of 1.0 to 1.5, (C) a photoacid generator, and (D) a vinyl ether group-containing compound. The composition is sensitive to actinic radiation, especially KrF excimer laser beam, has high sensitivity and resolution, and forms a resist pattern having improved plasma etching resistance and heat resistance.

Abstract: In a chemically amplified positive resist composition comprising an organic solvent, an acid labile group-protected resin and a photoacid generator, a compound having a weight average molecular weight of 100-1,000 and at least two phenolic hydroxyl groups in a molecule wherein the hydrogen atom of the phenolic hydroxyl group is partially replaced by an acid labile group in an overall average proportion of 10-80% is blended as a dissolution controller. The resist composition is highly sensitive to actinic radiation, has improved sensitivity and resolution, and is suitable for use in a fine patterning technique and commercially acceptable.

Abstract: The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.

Abstract: The invention provides a novel polymer comprising a recurring unit of formula. (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition.