Patents by Inventor Toshinobu Ohnishi
Toshinobu Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8021915Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.Type: GrantFiled: January 15, 2009Date of Patent: September 20, 2011Assignee: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
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Patent number: 7960716Abstract: An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2?) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2?) range of 23.0° to 26.0° in X-ray diffraction using CuK? radiation.Type: GrantFiled: March 8, 2005Date of Patent: June 14, 2011Assignee: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Satomi Sugiyama
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Patent number: 7795636Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.Type: GrantFiled: March 24, 2009Date of Patent: September 14, 2010Assignee: Canon Kabushiki KaishaInventors: Tomonari Nakayama, Toshinobu Ohnishi, Daisuke Miura
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Patent number: 7695999Abstract: Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.Type: GrantFiled: August 31, 2006Date of Patent: April 13, 2010Assignee: Canon Kabushiki KaishaInventors: Akane Masumoto, Shintetsu Go, Tomonari Nakayama, Toshinobu Ohnishi
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Patent number: 7605392Abstract: There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.Type: GrantFiled: June 9, 2005Date of Patent: October 20, 2009Assignee: Canon Kabushiki KaishaInventors: Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota
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Publication number: 20090186490Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.Type: ApplicationFiled: March 24, 2009Publication date: July 23, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Tomonari Nakayama, Toshinobu Ohnishi, Daisuke Miura
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Publication number: 20090124040Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.Type: ApplicationFiled: January 15, 2009Publication date: May 14, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
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Patent number: 7511296Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.Type: GrantFiled: March 14, 2006Date of Patent: March 31, 2009Assignee: Canon Kabushiki KaishaInventors: Tomonari Nakayama, Toshinobu Ohnishi, Daisuke Miura
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Patent number: 7491967Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.Type: GrantFiled: March 9, 2005Date of Patent: February 17, 2009Assignee: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
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Publication number: 20080308789Abstract: An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2?) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2?) range of 23.0° to 26.0° in X-ray diffraction using CuK? radiation.Type: ApplicationFiled: March 8, 2005Publication date: December 18, 2008Applicant: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Satomi Sugiyama
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Patent number: 7459338Abstract: A substrate is provided which comprises an organic resin layer on a base material, wherein the base material has an average surface roughness of not less than 1.2 nm but no more than 5 nm and a maximum height of a surface unevenness of not less than 0.1 ?m but no more than 1.0 ?m; the organic resin layer has an average surface roughness of not more than 1 nm and a maximum peak height of a surface unevenness of not more than 30 nm; and at least a part of a surface of the organic resin layer comprises a hydrophilic region.Type: GrantFiled: March 11, 2005Date of Patent: December 2, 2008Assignee: Canon Kabushiki KaishaInventors: Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Daisuke Miura
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Patent number: 7435989Abstract: Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.Type: GrantFiled: September 5, 2006Date of Patent: October 14, 2008Assignee: Canon Kabushiki KaishaInventors: Tomonari Nakayama, Akane Masumoto, Shintetsu Go, Toshinobu Ohnishi
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Patent number: 7394096Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.).Type: GrantFiled: August 22, 2007Date of Patent: July 1, 2008Assignee: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota
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Publication number: 20080048185Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.Type: ApplicationFiled: August 22, 2007Publication date: February 28, 2008Applicant: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota
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Patent number: 7285441Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.Type: GrantFiled: August 17, 2004Date of Patent: October 23, 2007Assignee: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota
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Publication number: 20070096079Abstract: There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.Type: ApplicationFiled: June 9, 2005Publication date: May 3, 2007Applicant: CANON KABUSHIKI KAISHAInventors: Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota
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Publication number: 20070085072Abstract: Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.Type: ApplicationFiled: August 31, 2006Publication date: April 19, 2007Applicant: CANON KABUSHIKI KAISHAInventors: Akane Masumoto, Shintetsu Go, Tomonari Nakayama, Toshinobu Ohnishi
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Publication number: 20070051947Abstract: Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.Type: ApplicationFiled: September 5, 2006Publication date: March 8, 2007Applicant: CANON KABUSHIKI KAISHAInventors: Tomonari Nakayama, Akane Masumoto, Shintetsu Go, Toshinobu Ohnishi
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Publication number: 20070012914Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.Type: ApplicationFiled: March 9, 2005Publication date: January 18, 2007Applicant: Canon Kabushiki KaishaInventors: Daisuke Miura, Tomonari Nakayama, Toshinobu Ohnishi, Makoto Kubota, Akane Masumoto, Hidetoshi Tsuzuki, Makiko Miyachi
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Publication number: 20060214159Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.Type: ApplicationFiled: March 14, 2006Publication date: September 28, 2006Applicant: Canon Kabushiki KaishaInventors: Tomonari Nakayama, Toshinobu Ohnishi, Daisuke Miura