Patents by Inventor Toshio Fujino
Toshio Fujino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230078165Abstract: A light emitting device of an embodiment of the present disclosure includes: a substrate having a first surface and a second surface opposed to each other; semiconductor stacks provided on the first surface of the substrate and each including a first conductivity type layer, an active layer, and a second conductivity type layer that are stacked in order from a side of the first surface, the semiconductor stacks including multiple light emitting regions configured to emit light; and a separation section provided between the multiple light emitting regions and having a top surface at a position higher than the active layer in a direction of a normal to the first surface of the substrate.Type: ApplicationFiled: February 10, 2021Publication date: March 16, 2023Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Akira OHMAE, Toshio FUJINO, Tatsuo OHASHI, Yusuke KATAOKA, Toyoharu OOHATA, Goshi BIWA
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Patent number: 11081028Abstract: A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.Type: GrantFiled: February 17, 2017Date of Patent: August 3, 2021Assignee: SONY CORPORATIONInventors: Akira Ohmae, Yusuke Kataoka, Tatsuo Ohashi, Sayaka Aoki, Hiroki Naito, Ippei Nishinaka, Tsuyoshi Sahoda, Toshio Fujino, Hideyuki Nishioka, Goshi Biwa
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Publication number: 20200302835Abstract: A light-emitting device assembly includes: a light-emitting device 11 including a light-emitting layer, a first electrode 31, and a second electrode 32; and a first connecting portion 41 and a second connecting portion 42 provided on a base 40, in which the first connecting portion 41 and the second connecting portion 42 are separated from each other by a separation portion 43, the base 40 being exposed from the separation portion 43, a wide portion 44 is provided on a first connecting portion side of the separation portion 43, the first electrode 31 includes a first portion 31A and a second portion 31B, the second portion 31B of the first electrode is connected to the first connecting portion 41, the first portion 31A of the first electrode extends from the second portion 31B of the first electrode, and an orthographic projection image of the first portion 31A of the first electrode with respect to the base 40 and the wide portion 44 of the separation portion 43 overlap with each other at least in part.Type: ApplicationFiled: February 17, 2017Publication date: September 24, 2020Inventors: AKIRA OHMAE, YUSUKE KATAOKA, TATSUO OHASHI, SAYAKA AOKI, HIROKI NAITO, IPPEI NISHINAKA, TSUYOSHI SAHODA, TOSHIO FUJINO, HIDEYUKI NISHIOKA, GOSHI BIWA
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Patent number: 9259870Abstract: Metal mold (1) for production of molded article (20) having an undercut portion (22), comprising first die (2) forming of an outer surface of main body part (21) of the molded article (20) and second die (3) composed of a first slide core (11) forming an outer surface of the undercut portion (22) of the molded article (20), a second slide core (12) forming an end (22a) of the undercut portion (22) and movable die (13) forming an inner surface of the shaped article (20), wherein the first die (2) is configured so as to be openable and closable as to the second die (3), and wherein each of the first slide core (11) and the second slide core (12) independently is movable in a direction different from the opening and closing direction of the first die (2), and wherein the second die (3) is provided with a biasing means (51) biasing the second slide core (12) toward the closing direction of the second slide core (12) and the first slide core (11).Type: GrantFiled: December 12, 2006Date of Patent: February 16, 2016Assignee: Toyota Jidosha Kabushiki KaishaInventors: Yuusuke Nakagawa, Toshio Fujino
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Patent number: 8357620Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.Type: GrantFiled: October 6, 2009Date of Patent: January 22, 2013Assignee: Sony CorporationInventors: Katsuji Takagi, Akio Machida, Toshio Fujino, Tadahiro Kono, Norio Fukasawa, Shinsuke Haga
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Patent number: 8278163Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.Type: GrantFiled: July 23, 2009Date of Patent: October 2, 2012Assignee: Sony CorporationInventors: Akio Machida, Toshio Fujino, Tadahiro Kono, Katsuji Takagi, Shinsuke Haga
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Patent number: 8089071Abstract: A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.Type: GrantFiled: March 7, 2007Date of Patent: January 3, 2012Assignee: Sony CorporationInventors: Akio Machida, Toshio Fujino, Tadahiro Kono
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Publication number: 20110033999Abstract: A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.Type: ApplicationFiled: July 30, 2010Publication date: February 10, 2011Applicant: SONY CORPORATIONInventors: Tadahiro Kono, Akio Machida, Toshio Fujino
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Publication number: 20100093112Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.Type: ApplicationFiled: October 6, 2009Publication date: April 15, 2010Applicant: SONY CORPORATIONInventors: Katsuji Takagi, Akio Machida, Toshio Fujino, Tadahiro Kono, Norio Fukasawa, Shinsuke Haga
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Publication number: 20100051830Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.Type: ApplicationFiled: July 23, 2009Publication date: March 4, 2010Applicant: SONY CORPORATIONInventors: Akio Machida, Toshio Fujino, Tadahiro Kono, Katsuji Takagi, Shinsuke Haga
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Publication number: 20100040720Abstract: Metal mold (1) for production of molded article (20) having an undercut portion (22), comprising first die (2) forming of an outer surface of main body part (21) of the molded article (20) and second die (3) composed of a first slide core (11) forming an outer surface of the undercut portion (22) of the molded article (20), a second slide core (12) forming an end (22a) of the undercut portion (22) and movable die (13) forming an inner surface of the shaped article (20), wherein the first die (2) is configured so as to be openable and closable as to the second die (3), and wherein each of the first slide core (11) and the second slide core (12) independently is movable in a direction different from the opening and closing direction of the first die (2), and wherein the second die (3) is provided with a biasing means (51) biasing the second slide core (12) toward the closing direction of the second slide core (12) and the first slide core (11).Type: ApplicationFiled: December 12, 2006Publication date: February 18, 2010Inventors: Yuusuke Nakagawa, Toshio Fujino
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Patent number: 7651928Abstract: A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed. The energy beam is scanned in parallel lines while keeping pitches of not larger than an irradiation radius of the energy beam to grow band-shaped crystal grains in a direction different from a scanning direction of the energy beam.Type: GrantFiled: March 7, 2007Date of Patent: January 26, 2010Assignee: Sony CorporationInventors: Toshio Fujino, Akio Machida, Tadahiro Kono
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Patent number: 7598160Abstract: A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.Type: GrantFiled: June 6, 2008Date of Patent: October 6, 2009Assignee: Sony CorporationInventors: Akio Machida, Toshio Fujino, Tadahiro Kono
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Patent number: 7541615Abstract: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.Type: GrantFiled: May 25, 2007Date of Patent: June 2, 2009Assignee: Sony CorporationInventors: Toshio Fujino, Akio Machida, Tadahiro Kono
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Patent number: 7538014Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations.Type: GrantFiled: October 26, 2006Date of Patent: May 26, 2009Assignee: Sony CorporationInventors: Dharam Pal Gosain, Akio Machida, Kazushi Nakano, Toshio Fujino, Junichi Sato
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Patent number: 7521712Abstract: A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.Type: GrantFiled: March 13, 2007Date of Patent: April 21, 2009Assignee: Sony CorporationInventors: Akio Machida, Toshio Fujino, Tadahiro Kono
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Publication number: 20080241981Abstract: A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.Type: ApplicationFiled: June 6, 2008Publication date: October 2, 2008Applicant: SONY CORPORATIONInventors: Akio Machida, Toshio Fujino, Tadahiro Kono
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Publication number: 20080237711Abstract: A manufacturing method of a thin-film semiconductor apparatus and a thin-film semiconductor apparatus, in which a semiconductor thin film is spot-irradiated with an energy beam in the presence of n-type or p-type impurity to form a shallow diffusion layer in which the impurity is diffused only in a surface layer of the semiconductor thin film.Type: ApplicationFiled: September 18, 2007Publication date: October 2, 2008Applicant: SONY CORPORATIONInventors: Akio Machida, Toshio Fujino, Tadahiro Kono
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Publication number: 20080054266Abstract: A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.Type: ApplicationFiled: March 7, 2007Publication date: March 6, 2008Applicant: SONY CORPORATIONInventors: Akio Machida, Toshio Fujino, Tadahiro Kono
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Publication number: 20070290209Abstract: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.Type: ApplicationFiled: May 25, 2007Publication date: December 20, 2007Applicant: SONY CORPORATIONInventors: Toshio Fujino, Akio Machida, Tadahiro Kono