Abstract: A resin-sealed type semiconductor device comprises a lead frame having a bed and external leads, a semiconductor element mounted on the bed and having electrodes, a fine metal wire for making an electrical connection between the electrode and the lead frame, a resin layer which seals the semiconductor element, fine metal wire and portion of the lead frame therein and a recess formed at a central portion of one surface side of the resin layer and having a controlled depth, whereby the development of cracks in the resin layer as caused by heat load is prevented.

Abstract: A first high-power element chip having high current consumption is mounted and fixed of a first bed portion on a heat radiating fin by soldering. A second high-power element chip is mounted and fixed by high-temperature die bonding on a second bed portion formed by denting a part of one end of a lead frame made of a metal thin plate, and an insulating paste is filled between the lower surface of the second bed portion and the upper surface of the first bed portion. In addition, a logic element chip is mounted and fixed on one end of another lead frame made of a metal thin plate by a conductive adhesive such as a silver paste.