Abstract: Methods and apparatus to perform noise estimation for frequency-domain equalizers of high-speed downlink packet access (HSDPA) receivers are disclosed. An example method comprises measuring a total power associated with a code division multiple access (CDMA) signal received through a plurality of multipaths, measuring a plurality of channel responses for respective ones of the plurality of multipaths, measuring a plurality of noise plus inter-path interference powers for the respective ones of the plurality of multipaths, and estimating an additive noise power for the received CDMA signal based on the total power, the plurality of channel responses and the plurality of noise plus inter-path interference powers.

Abstract: Methods and apparatus to perform closed-loop transmit diversity with frequency-domain equalizers in high-speed downlink packet access (HSDPA) receivers are disclosed. An example method comprises receiving a first signal representative of a first code division multiple access (CDMA) signal received from a first transmit antenna and a second signal representative of a second CDMA signal received from a second transmit antenna, computing a first channel estimate for a first path from the first transmit antenna to the receiver, computing a second channel estimate for a second path from the second transmit antenna to the receiver, and computing a frequency-domain equalizer (FDE) coefficient for the first path based on the first and the second channel estimates.

Abstract: Methods and apparatus to perform fractional-spaced channel estimation for frequency-domain equalizers in high-speed downlink packet access (HSDPA) receivers are disclosed. An example method comprises computing a first fractionally-spaced time-domain channel estimate from an oversampled CDMA signal, and computing a first chip-interval frequency-domain equalizer (FDE) coefficient from the first fractionally-spaced channel estimate.

Abstract: In a first embodiment, Tetraethyl Orthosilicate Si(OC2H5)4 is used at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition. In a second embodiment, annealing is carried out in sparse oxygen gas atmosphere after deposition, to mend crystal defects that occurred during deposition. In a third embodiment, initial temperature of the CVD device is kept at about 400° C., whereby the start of natural oxidation of the deposition surface is prevented and production circumstances of the semiconductor element is not deteriorated. Then, the CVD device is heated up to CVD temperature of about 750° C. or about 650° C., to deposit oxide.

Abstract: Blind transport format detection with sliding window trace-back for evaluating decodings to candidate block lengths together with piecewise linear approximation of the reliability figure (logarithm of ratio of maximum survivor path metric minus minimum survivor path metric divided by 0 state path metric minus minimum survivor path metric) with a small lookup table plus simple logic.

Abstract: Methods and apparatus to facilitate improve code division multiple access (CDMA) receivers are disclosed. An example method disclosed herein comprises: receiving a signal containing first portions that are based on known data and second portions that are based on unknown data; generating a training signal, from the received signal, that substantially represents one or more of the first portions; adapting filter coefficients using the training signal; and equalizing the received signal using the adapted filter coefficients.

Abstract: In a first embodiment, Tetraethyl Orthosilicate Si(OC2H5)4 is used at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition. In a second embodiment, annealing is carried out in sparse oxygen gas atmosphere after deposition, to mend crystal defects that occurred during deposition. In a third embodiment, initial temperature of the CVD device is kept at about 400° C., whereby the start of natural oxidation of the deposition surface is prevented and production circumstances of the semiconductor element is not deteriorated. Then, the CVD device is heated up to CVD temperature of about 750° C. or about 650° C., to deposit oxide.

Abstract: A method of fabricating a semiconductor device includes the steps of forming a first film of silicon nitride or silicon oxynitride on a polysilicon layer, forming a second film of silicon oxide on the first film by chemical vapor deposition, and oxygen-annealing the second film to form a tunnel oxide film. The presence of the silicon nitride or silicon oxynitride film enables an annealing process with a high oxidation capability to be used without oxidizing the polysilicon layer. The leakage of unwanted current through the tunnel oxide film can thereby be reduced, improving the data retention characteristics of devices such as flash memories.

Abstract: A method of fabricating a semiconductor device includes the steps of forming a first film of silicon nitride or silicon oxynitride on a polysilicon layer, forming a second film of silicon oxide on the first film by chemical vapor deposition, and oxygen-annealing the second film to form a tunnel oxide film. The presence of the silicon nitride or silicon oxynitride film enables an annealing process with a high oxidation capability to be used without oxidizing the polysilicon layer. The leakage of unwanted current through the tunnel oxide film can thereby be reduced, improving the data retention characteristics of devices such as flash memories.

Abstract: The present invention protects a thin wire connection from oscillation of a resin protecting an electronic circuit module from vibration, impact, and corrosion. An electronic control unit including an electronic circuit module in which a bare chip is mounted on a circuit board and a case for housing the module, is provided, wherein the case is filled with a potting gel to protect the module. The bare chip, including its wire connection to the circuit board, is sealed in advance with a gelatinous resin having thixotropy prior to hardening. The gelatinous substance cures to form a hardened inner layer which has a penetration that is lower than that of the filled potting gel after hardening, and functions to eliminate or substantially reduce the affect of viscoelastic oscillation of the outer layer on the bare chip and the wire connection.

Abstract: As the first method, provided is using Tetraethyl Orthosilicate Si(OC2H5)4 at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition. As the second method, provided is annealing in sparse oxygen gas atmosphere after deposition, to mend crystal defects occurred during deposition. As the third method, provided is keeping initial temperature of CVD device in the temperature (about 400° C.) in which natural oxidation of deposition starting surface is prevented and production circumstance of semiconductor element is not deteriorated, then, heating up to CVD temperature (about 750° C. or about 650° C.), to deposit oxide.

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

Abstract: Blind transport format detection with sliding window trace-back for evaluating decodings to candidate block lengths together with piecewise linear approximation of the reliability logarithm function with a small lookup table plus simple logic.

Abstract: Blind transport format detection with sliding window trace-back for evaluating decodings to candidate block lengths together with piecewise linear approximation of the reliability logarithm function with a small lookup table plus simple logic.

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere.

Abstract: The present invention protects a thin wire connection from oscillation of a resin protecting an electronic circuit module from vibration, impact, and corrosion. An electronic control unit comprising an electronic circuit module in which a bare chip is mounted on a circuit board and a case for housing the module, is provided, wherein the case is filled with a potting gel to protect the module. The bare chip, including its wire connection to the circuit board, is sealed in advance with a gelatinous resin having thixotropy prior to hardening. The gelatinous substance cures to form a hardened inner layer which has a penetration that is lower than that of the filled potting gel after hardening, and functions to eliminate or substantially reduce the affect of viscoelastic oscillation of the outer layer on the bare chip and the wire connection.

Abstract: An explosion-proof tape is wound on an outer circumference of a panel portion of a cathode-ray tube and a metal band is shrink-fitted on the tape. The tape is composed of a support having at least a layer composed of propylene polymer with a propylene content of not less than 40 weight % or styrene polymer with a styrene content of not less than 50 weight % and an adhesive layer formed on one surface of the support in a manner so that a plurality of fibers with a softening point of not lower than 200° C. are buried in the adhesive layer in a lengthwise direction of the tape. An explosion-proof structure of a cathode-ray tube, wherein a metal band is shrink-fitted on an outer circumference of a panel portion of a cathode-ray tube, through a layer which is formed by winding such an explosion-proof tape as mentioned above, through its adhesive layer.

Abstract: A method of making a semiconductor device comprises forming a gate electrode on a semiconductor substrate, forming a diffusion layer in the semiconductor substrate, forming a first SiO2 film on a bottom surface of the semiconductor substrate and second SiO2 film on an upper surface of the semiconductor substrate, removing the second SiO2 film, forming a CoSi2 film on the diffusion, and removing an undesired cobalt from the first SiO2 film.

Abstract: A method of making a semiconductor device comprises forming a gate electrode on a semiconductor substrate, forming a diffusion layer in the semiconductor substrate, forming a first SiO2 film on a bottom surface of the semiconductor substrate and second SiO2 film on an upper surface of the semiconductor substrate, removing the second SiO2 film, forming a CoSi2 film on the diffusion, and removing an undesired cobalt from the first SiO2 film.

Abstract: A lower capacitor electrode is formed on an interlayer dielectric, and then a resultant specimen is subjected to reduction and thermal nitriding in an ammonia gas atmosphere in a deposition chamber wherein pressure has been reduced to a range from 533 Pa to 1333 Pa. A silicon nitride film is then formed on the lower electrode and the interlayer dielectric. A time for carrying out the reduction and thermal nitriding is longer than a film thickness saturation time of the silicon nitride film formed on the interlayer dielectric.