Patents by Inventor Toshio Okawa

Toshio Okawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5246535
    Abstract: A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal by pulling the silicon single crystal while rotating it relative to a crucible, a comparison between a measured diameter value of the pulled single crystal measured by optical means and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete differential PID processing or the Smith method processing to calculate a pull rate and the pull rate is applied to a motor controller of a crystal pulling apparatus thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate.
    Type: Grant
    Filed: August 26, 1992
    Date of Patent: September 21, 1993
    Assignee: NKK Corporation
    Inventors: Akihiro Kawashima, Tatsuo Sato, Toshio Okawa
  • Patent number: 5176787
    Abstract: A method of measuring the diameter of a silicon single crystal. At intervals of a given rotational period of a pulled single crystal being pulled by the CZ method, optical means samples the luminance distribution of a fusion ring to obtain measured diameter values of the pulled single crystal so that the measured diameter values are processed by a low-pass filter to generate filter output values converted to time series diameter data and the filter output values are subjected to moving averaging to calculate a diameter value.
    Type: Grant
    Filed: April 26, 1991
    Date of Patent: January 5, 1993
    Assignee: NKK Corporation
    Inventors: Akihiro Kawashima, Tatsuo Sato, Toshio Okawa
  • Patent number: 5164039
    Abstract: A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal by pulling the silicon single crystal while rotating it relative to a crucible, a comparison between a measured diameter value of the pulled single crystal measured by optical means and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete differential PID processing or the Smith method processing to calculate a pull rate and the pull rate is applied to a motor controller of a crystal pulling apparatus thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate.
    Type: Grant
    Filed: September 5, 1991
    Date of Patent: November 17, 1992
    Assignee: NKK Corporation
    Inventors: Akihiro Kawashima, Tatsuo Sato, Toshio Okawa