Abstract: A base-attached encapsulant for semiconductor encapsulation, includes a base and encapsulating resin layer on one surface of the base, the base being composed of a fibrous base layer in which a thermosetting resin composition containing a thermosetting resin is impregnated into a fibrous base and cured, a cured material layer A composed of a cured material of the thermosetting resin composition formed on the fibrous base layer at the opposite side to the encapsulating resin layer, and a cured material layer B composed of a cured material of the thermosetting resin composition formed on the fibrous base layer at the encapsulating resin layer side. The thickness Ta of the cured material layer A is 0.5 ?m or more. The ratio Ta/Tb of the thickness Ta of the cured material layer A and the thickness Tb of the cured material layer B is in a range of 0.1 to 10.

Abstract: The purpose of the present invention is to provide a silicone-modified epoxy resin which produces a cured product having excellent low gas permeability and strength; a composition of the resin; and an epoxy resin cured product obtainable by curing the composition. Disclosed is an epoxy resin represented by the following Formula (1): wherein R1 independently represents a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R2 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms; R3 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R4 represents an oxygen atom or a divalent hydrocarbon group having an aliphatic cyclic structure; R5 represents silicone chain having a norbornane epoxy structure at either end; and X represents an organic group having a norbornane epoxy group.

Abstract: A composite oxide particle prepared from raw materials comprising: (1) a finely powdered silica having a BET specific surface area of 50 m2/g or greater or an alkoxysilane, and (2) a liquid metal alkoxide other than an alkoxysilane or a nano order metal oxide powder other than finely powdered silica, one of components (1) and (2) being a solid oxide and the other being a liquid alkoxide, wherein the composite oxide particle is prepared by mixing or kneading the raw materials to obtain a sol or gel-like substance, sintering the sol or gel-like substance at a temperature of 300° C. or higher to form a glass-like substance, and then crushing the glass-like substance is provided. Also, a resin composition containing the composite oxide particle, and a reflector for a light-emitting semiconductor device formed using the resin composition are provided.

Abstract: The present invention provides an encapsulant with a base for use in semiconductor encapsulation, for collectively encapsulating a device mounting surface of a substrate on which semiconductor devices are mounted, or a device forming surface of a wafer on which semiconductor devices are formed, the encapsulant comprising the base, an encapsulating resin layer composed of an uncured or semi-cured thermosetting resin formed on one surface of the base, and a surface resin layer formed on the other surface of the base. The encapsulant enables a semiconductor apparatus having a good appearance and laser marking property to be manufactured.

Abstract: Problem to be Solved The purpose of the invention, in view of the above circumstances, is to provide a silicone-modified epoxy resin composition that offers a cured article excellent in low gas permeability and strength, and an epoxy resin cured article obtained by curing the composition. Solution An epoxy resin represented by the following formula (1) wherein R1 represents an alkylene group having 2 to 6 carbon atoms and optionally containing an ester or ether bond; R2 represents a monovalent aliphatic hydrocarbon group having 1 to 6 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R3 represents an oxygen atom or a phenylene group; k represents 1 to 10 as an average value; m represents an integer of 0 to 2; n represents 0 to 10 as an average value; and a plurality of groups R1, R2, R3, k, or m present in the formula may be the same or different from each other.

Abstract: A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Abstract: An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the connection carrier, wherein the connection carrier configured with a silicone matrix with a fiber reinforcement, at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith, an annular potting body includes a soft silicone on the carrier top and in direct contact with the carrier top, but not in direct contact with the semiconductor chip, and a glass body comprising a glass sheet applied over the semiconductor chip and over sides of the potting body remote from the connection carrier, thereby forming a space between the semiconductor chip and the potting body.

Abstract: A silicone-modified epoxy resin composition that offers a cured product excellent in low permeability to gas, mechanical strength, and heat resistance and transparency and further offers an optical semiconductor sealing material excellent in heat cycle resistance, and a cured epoxy resin product obtained by curing the composition. The epoxy resin composition comprises the following components (A) to (C): (A) a silicone-modified epoxy resin having a cyclic siloxane structure, (B) a silicone-modified epoxy resin having a branched siloxane structure, and (C) an epoxy resin curing agent containing a polyvalent carboxylic acid having a tricyclodecane structure and a carboxylic anhydride compound.

Abstract: A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Abstract: A method for manufacturing a semiconductor-apparatus, including an encapsulating step of a device mounting surface of a substrate having semiconductor-devices mounted thereon with a base-attached encapsulant having a base and a thermosetting resin layer formed on one surface of the base, the semiconductor-devices being mounted by flip-chip bonding, the encapsulating step including a unifying stage of the substrate having the semiconductor-devices mounted thereon and the base-attached encapsulant under a reduced pressure condition with a vacuum of 10 kPa or less and a pressing stage of the unified substrate with a pressure of 0.2 MPa or more.

Abstract: The present invention provides an electromagnetic wave shielding support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, the support base-attached encapsulant including a support base having an electromagnetic wave shielding property of 20 dB or more within a range of 100 MHz to 1,000 MHz, and an encapsulant composed of a thermosetting resin layer laminated on the support base.

Abstract: Support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate or semiconductor device forming surface of a wafer, containing a support base having one fibrous film or a plurality of the fibrous films being laminated, the fibrous film subjected to surface treatment with an organosilicon compound, and a resin layer of thermosetting resin formed on one surface of the support base. The support base-attached encapsulant inhibit the substrate or wafer from warping and semiconductor devices from peeling away from the substrate, and collectively encapsulate the semiconductor device mounting surface of the substrate or the semiconductor device forming surface of the wafer even when a large-diameter wafer or large-area substrate is encapsulated.

Abstract: A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed, including a resin-impregnated fibrous base material which is obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin and has a linear expansion coefficient (ppm/° C.) in an X-Y direction of less than 3 ppm, and an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.

Abstract: A method of manufacturing an optical semiconductor apparatus includes: cutting a UV-curable adhesive silicone composition sheet into small chips; disposing the resulted chip on a surface of an optical semiconductor device; irradiating UV-rays to the chip via a photomask according to lithography; developing an uncured portion of the chip with a solvent; and heat-curing after that. The UV-curable adhesive silicone composition sheet is obtained by forming a UV-curable adhesive silicone composition into sheet-form, the UV-curable adhesive silicone composition including: (A) an organopolysiloxane having a resin structure of R1SiO3/2, R22SiO2/2, and R3aR4bSiO(4-a-b)/2 units, (B) an organohydrogenpolysiloxane having a resin structure of R1SiO3/2, R22SiO2/2, and R3cHdSiO(4-c-d)/2 units, and (C) a photoactive catalyst. The UV-curable adhesive silicone composition is in a plastic solid state or a semi-solid state in an uncured state at room temperature.

Abstract: A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed, including a resin-impregnated fibrous base material which is obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin and has a linear expansion coefficient (ppm/° C.) in an X-Y direction of less than 3 ppm, and an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.

Abstract: The present invention provides an electromagnetic wave shielding sheet including a surface-treated fibrous film and a conductive layer, the surface-treated fibrous film having a conventional bending rigidity 3 to 100 times larger than a conventional bending rigidity of a untreated fibrous film as measured according to a procedure described in Japanese Industrial Standards R 3420, the conductive layer being composed of a metallic mesh. The electromagnetic wave shielding sheet has sufficient electromagnetic wave shielding property, high strength, flexibility, excellent dimensional stability, and high heat resistance and configured to inhibit warp and swell during high temperature heating.

Abstract: Support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate or semiconductor device forming surface of a wafer, containing a support base having one fibrous film or a plurality of the fibrous films being laminated, the fibrous film subjected to surface treatment with an organosilicon compound, and a resin layer of thermosetting resin formed on one surface of the support base. The support base-attached encapsulant inhibit the substrate or wafer from warping and semiconductor devices from peeling away from the substrate, and collectively encapsulate the semiconductor device mounting surface of the substrate or the semiconductor device forming surface of the wafer even when a large-diameter wafer or large-area substrate is encapsulated.

Abstract: A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material.

Abstract: The present invention provides a method for producing a surface-treated glass fiber film comprising steps of: preparing a treatment solution consisting of a mixture of a hydrolysable silane compound and a partially hydrolyzed condensate thereof; coating a glass fiber film with the treatment solution so that the attached amount of the mixture is 2% by mass or more and 90% by mass or less, relative to 100% by mass of the surface-treated glass fiber film and drying the same; and heat-treating the glass fiber film coated. There can be provided a method for producing a surface-treated glass fiber film having high strength, a low average coefficient of linear expansion, a high storage rigidity at high temperature and excellent in heat resistance, flexibility, electric insulation, dimensional stability, and surface homogeneity, with less environmental impact.

Abstract: A wavelength conversion sheet filled with a large amount of phosphor, enabling the phosphor to be easily dispersed uniformly and in a large amount near the surface of an LED element. Specifically, the sheet includes: a layer formed from a heat-curable resin composition, which contains 100 parts by mass of a resin component and 100 to 2,000 parts by mass of a particulate phosphor in which the proportion of particles having a sphericity of 0.7 to 1.0 is not less than 60% of all the particles, and which exists in a plastic solid or semisolid state in an uncured state at normal temperature, wherein the average particle diameter of the phosphor is not more than 60% of the thickness of the layer formed from the heat-curable resin composition, and the maximum particle diameter thereof is not more than 90% thereof.