Abstract: A semiconductor laser device containing a laser oscillation-operating area comprising a superlatticed quantum well region which is composed of layers of GaAs alternating with layers of Al.sub.x Ga.sub.1-x As (0<x.ltoreq.1), where each of the layers has a thickness of several molecular layers or less;optical guiding layers consisting of Al.sub.y Ga.sub.1-y As (x.ltoreq.y.ltoreq.1) sandwiching the quantum well region, where the AlAs mole fraction varies continuously; andcladding layers covering the optical guiding layers.

Abstract: A semiconductor device is formed by sequentially forming a first clad layer, active layer, second clad layer, and cap layer from, for example, an AlGaAs layer with an AlAs mixing ratio of .gtoreq.0.4, on a substrate made of GaAs or the like by MBE, MOCVD or another high precision growth process. Then AlGaAs layer is selectively removed only in the vicinity of formed ridges, and in this part, grooves on two stripes are formed from the cap layer surface, leaving the second clad layer with an intact thickness of, for example, only 3000 .ANG.. An insulation layer made of, for example, SiN is then formed in the groove area and the AlGaAs layer region, thereby creating a current stripe structure, in which only two grooves provide for current passages, that is, the light-emitting regions.

Abstract: A method for the production of semiconductor devices comprising: subjecting a GaAs substrate with an oxidized film thereon to a degasification treatment, heating the substrate during a radiation treatment by a molecular beam within a pre-treatment chamber to remove the oxidized film from the substrate, and growing a phosphorous compound semiconductor layer on the substrate by molecular beam epitaxy within a growth chamber connected to the pre-treatment chamber.

Abstract: A semiconductor device having a superlattice composed of two kinds of semiconductor materials, wherein the lattice unit of said superlattice is composed of periodically laminated layers consisting of four or more kinds of thin layers which are different from each other in the combination of materials and thickness.

Abstract: A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.

Abstract: A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 .ANG. to 150 .ANG..

Abstract: A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.

Abstract: An optical semiconductor device comprising a GaAs substrate and a lamination of molecular layer units formed on said GaAs substrate, said molecular layer units being composed of binary compound semiconductors of InP, GaP and AlP.

Abstract: A semiconductor laser device comprises a superlatticed layer which is composed of alternate layers consisting of GAP thin layers and AlP thin layers. The superlatticed layer is formed as an active layer on a GaP substrate. The semiconductor laser device also is composed of two superlatticed cladding layers formed on either side of the active layer. The laser device of the present invention has an oscillation wavelength in the visible short-wavelength region.

Abstract: An active layer for laser oscillation and optical guiding layers for guiding laser light sandwiching the active layer therebetween are included in the device. At least one of the optical guiding layers is formed by a superlattice, the optical refractive index of which is lower than that of the active layer. Further, the optical refractive index is gradually decreased in the direction from the portion of the optical guiding layer adjacent to the active layer, to the outside of the optical guiding layer.

Abstract: An optical semiconductor device comprising laminated thin layers made of two kinds of binary compounds to form a superlatticed optical waveguiding structure and a superlatticed active region structure, thereby achieving a quantum well effect.

Abstract: The laser device has an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.3) quantum well active region having a thickness of 200 angstroms or less. Al.sub.y Ga.sub.1-y As (y>x) carrier supplying layers sandwich the quantum well active region therebetween. An Al.sub.z Ga.sub.1-z As (z>y) cladding layer is disposed on each of the carrier supplying layers. Finally an Al.sub.w Ga.sub.1-w As (w>z) barrier layer is disposed between each of the carrier supplying layers and each of the cladding layers.

Abstract: A semiconductor laser array device comprising a substrate having a plurality of adjacent striped channels on its surface, and a plurality of laser operation areas each of which contains a cladding layer, an active layer and another cladding layer which have been successively formed on the surface of said substrate by molecular beam epitaxy or metal organic chemical vapor deposition in such a manner that the surface of each of these layers becomes parallel to the surface of said substrate.

Abstract: A semiconductor laser array includes a plurality of stripe-shaped stimulated regions of the index guide type. A plurality of buried layers are disposed between each of the plurality of stripe-shaped stimulated regions. A light absorption layer is formed in each of the plurality of stripe-shaped stimulated regions so that the stimulated region has the optical loss greater than an buried layer, whereby optical coupling is performed with no phase difference.

Abstract: A semiconductor laser apparatus comprising: a semiconductor laser array device in which a plurality of laser operation areas are disposed in a parallel manner to attain optical phase coupling therebetween and laser lights are propagated with a 180.degree. phase shift therebetween in the adjacent laser operation areas, resulting in a far-field pattern having a peak in each of the two different directions of the emission of said laser beams therefrom, and a stem containing the semiconductor laser array device therein in such a manner that one of the the laser lights from the semiconductor laser array device is blocked with the inner wall of the stem and the other laser beam passes outside of the stem.

Abstract: A stripe geometry semiconductor laser comprising a multi-layered crystal structure having a substrate and an active layer for laser oscillation; an etching blocking layer on said multi-layered crystal structure; and a striped mesa-type multi-layered crystal having a cladding layer, which serves as an electroconductive region, on said etching blocking layer, resulting in a difference in the distribution of the refractive index of light with regard to the active layer between the inside and the outside of said striped mesa-type multi-layered crystal.

Abstract: An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth.

Abstract: An optical semiconductor apparatus comprising an optical semiconductor device at the side of one facet of a conductive substrate, an electrical circuit device at the side of the other facet of the conductive substrate, an insulating crystal layer formed by an epitaxial growth technique between the conductive substrate and the electrical circuit device to thereby electrically isolate the electrical circuit device from the optical semiconductor device, and a wiring layer formed on the exterior surface of the insulating crystal layer to connect an electrical connection terminal of the electrical circuit device to an electrical connection terminal of the optical semiconductor device.

Abstract: A GaAlAs semiconductor laser element includes a Ga.sub.1-x Al.sub.x As active layer sandwiched by a first and second Ga.sub.1-y Al.sub.y As cladding layers. A Ga.sub.1-z Al.sub.z As substrate layer supports the first cladding layer, and a Ga.sub.1-z Al.sub.z As cap layer covers the second cladding layer. The AlAs mole fraction (z) of the substrate layer and the cap layer is selected slightly smaller than the AlAs mole fraction (x) of the active layer. Further, the active layer is located in the laser element so that the active layer is separated from the mounted surface by more than 35% of the laser element thickness, and is separated from the opposing surface by more than 18% of the laser element thickness.

Abstract: A GaAs semiconductor laser includes a GaAs semiconductor laser element, and a Cu heat sink attached to the GaAs semiconductor laser element through the use of an In solder. The GaAs semiconductor laser element includes an active layer sandwiched by cladding layers, and a substrate upon which various layers are formed. The GaAs semiconductor laser element is constructed so that the active layer is separated from the mounted surface by at least a distance which corresponds to about 32 to 35% of the entire thickness of the GaAs semiconductor laser element, thereby minimizing the stress applied to the active layer.