Patents by Inventor Toshiroh Abe

Toshiroh Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5075751
    Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.
    Type: Grant
    Filed: September 17, 1990
    Date of Patent: December 24, 1991
    Assignee: Matsushita Electric Works, Ltd.
    Inventors: Kazushi Tomii, Toshiroh Abe, Takuya Komoda