Abstract: The present invention relates to a novel salt of 2-(4-(5,6-diphenylpyrazin-2-yl)(isopropyl)amino)butoxy)acetic acid (hereinafter referred to as “Compound B”) and a crystal of the salt thereof.

Abstract: The present invention provides a technology capable of shortening a TAT of a microcomputer with a nonvolatile memory built therein and achieving a reduction in cost. Flash ROMs comprising memory cells each substantially identical in structure to each of memory cells of a flash memory are formed in their corresponding chips lying in a wafer. Subsequently, memory information is written into each of the memory cells of the flash ROM in a probe test process. Thereafter, the memory information written into the memory cell thereof is made unreprogrammable to thereby disable rewriting of the post-shipment memory information. Thus, the shortening of a TAT can be achieved as compared with a mask ROM built-in microcomputer, and management and fabrication costs can be reduced.

Abstract: The present invention provides a technology capable of shortening a TAT of a microcomputer with a nonvolatile memory built therein and achieving a reduction in cost. Flash ROMs comprising memory cells each substantially identical in structure to each of memory cells of a flash memory are formed in their corresponding chips lying in a wafer. Subsequently, memory information is written into each of the memory cells of the flash ROM in a probe test process. Thereafter, the memory information written into the memory cell thereof is made unreprogrammable to thereby disable rewriting of the post-shipment memory information. Thus, the shortening of a TAT can be achieved as compared with a mask ROM built-in microcomputer, and management and fabrication costs can be reduced.

Abstract: The present invention provides a technology capable of shortening a TAT of a microcomputer with a nonvolatile memory built therein and achieving a reduction in cost. Flash ROMs comprising memory cells each substantially identical in structure to each of memory cells of a flash memory are formed in their corresponding chips lying in a wafer. Subsequently, memory information is written into each of the memory cells of the flash ROM in a probe test process. Thereafter, the memory information written into the memory cell thereof is made unreprogrammable to thereby disable rewriting of the post-shipment memory information. Thus, the shortening of a TAT can be achieved as compared with a mask ROM built-in microcomputer, and management and fabrication costs can be reduced.

Abstract: The present invention provides a technology capable of shortening a TAT of a microcomputer with a nonvolatile memory built therein and achieving a reduction in cost. Flash ROMs comprising memory cells each substantially identical in structure to each of memory cells of a flash memory are formed in their corresponding chips lying in a wafer. Subsequently, memory information is written into each of the memory cells of the flash ROM in a probe test process. Thereafter, the memory information written into the memory cell thereof is made unreprogrammable to thereby disable rewriting of the post-shipment memory information. Thus, the shortening of a TAT can be achieved as compared with a mask ROM built-in microcomputer, and management and fabrication costs can be reduced.

Abstract: An arm member having a folding expansion/contraction mechanism is fixed to a rotary shaft. A support member is rotatively mounted on the distal end of the arm member. This support member maintains a constant relationship with the rotary shaft. An auxiliary support member is mounted on a support shaft fixed to the support member, the auxiliary support member being able to swing. A cam mechanism is provided at rotation portions of the support member and auxiliary support member. The auxiliary support member is swung by this cam mechanism in accordance with a folding expansion/contraction motion of the arm member.

Abstract: In a microcomputer with a programmable ROM, there is provided an external pin at which a mode select signal is entered so as to select one of three modes, including a MCU mode in which an application system is controlled by an application program which has been stored in the programmable ROM, a PROM mode in which the application program is written into the programmable ROM, and an inline mode in which predetermined data is written to a part of the programmable ROM with the microcomputer mounted on a user system.

Abstract: A method of forming a number of discrete solder layers on a semiconductor wafer of a large area. A number of regions which are easy to be wetted with solder are formed on one of the major surfaces of the wafer. A solder foil is positioned on the one major surface and a plate-like jig including a plate and projections formed on one surface thereof is disposed on the solder foil with the projections facing the latter. By heating the stacked assembly at a sufficiently high temperature for the solder foil to be molten, a number of the discrete solder layers having a uniform thickness are formed on the semiconductor wafer.