Abstract: A hand mechanism (2) comprises a plurality of finger units. Each of the plurality finger units is equipped with a first finger link unit (211) including a fingertip, a first joint unit (22) provided at an end portion on a finger base side of the first finger link unit (211), a second finger link unit (212) connected to the first finger link unit (211) via the first joint unit (22), and a second joint unit (23) provided at an end portion on a finger base side of the second finger link unit (212). A suction mechanism (600) is provided on at least one predetermined finger unit of the plurality of finger units (21). The suction mechanism (600) is provided on a dorsal surface (216) of the first finger link unit (211) in a predetermined finger, and suctions and retains a target object by generating negative pressure.

Abstract: To manufacture a semiconductor device by a method including the steps of: forming an oxide over a substrate, a first conductor over the oxide, and a second conductor over the first conductor; forming a first insulator to cover the oxide, the first conductor, and the second conductor; forming an opening in the first insulator to divide the second conductor into a third conductor and a fourth conductor; forming a second insulator and a third insulator to cover the oxide and the first insulator; processing the second insulator and the third insulator into a fourth insulator and a fifth insulator; processing the first conductor using the fourth insulator and the fifth insulator as a mask to divide the first conductor into a fifth conductor and a sixth conductor; and removing the fifth insulator.

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: Realized is reliable fixation of a material in a fluid state containing a monovalent metal salt of alginic acid when the material is applied to a subject. A combination of compositions comprising a first material composition containing a monovalent metal salt of alginic acid and a second material composition containing a cross-linking agent having an action of cross-linking the monovalent metal salt of alginic acid, wherein the combination is to be used in such a way as to apply the first material composition to a subject in a fluid state and contact the second material composition with the first material composition applied to the subject to gel at least a part of the first material composition, wherein the first material composition further contains a coloring component so that a formation state of a gel coat on a surface of the first material composition applied to the subject can be evaluated.

Abstract: A retractor is provided that can form a joint cavity internal space for a field of view for an endoscope and practice of a treatment in a state where a wound area is spread. A retractor includes first arm portions 2 and 3 and a second arm portion 4 positioned between the first arm portions 2 and 3. The first arm portions 2 and 3 include first claw portions 12 and 13 to be hung on a wound area entrance edge. The second arm portion 4 includes a second claw portion 14 to be hung on the wound area entrance edge. When the first arm portions 2 and 3 and the second arm portion 4 are in a closed state, the first claw portions 12 and 13 and the second claw portion 14 overlap with each other.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor including a gate electrode, a source electrode, and a drain electrode; a first insulator over the transistor; a second insulator over the first insulator; a third insulator over the second insulator; a first electrode in contact with the top surface of the source electrode; and a second electrode in contact with the top surface of the drain electrode. The second insulator includes a first opening portion overlapping with the source electrode and a second opening portion overlapping with the drain electrode. The third insulator is in contact with the side surface of the second insulator and the top surface of the first insulator inside the first opening portion and the second opening portion. The first electrode is positioned through the first opening portion. The second electrode is positioned through the second opening portion.

Abstract: A semiconductor device with high on-state current is provided.

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract: A semiconductor device with high on-state current is provided.

Abstract: There is provided an on-vehicle display controller including a video data acquiring unit configured to acquire captured video data obtained through imaging by an imager that is configured to image surroundings of a vehicle, a detecting unit configured to detect at least one following vehicle in the captured video data, an identifying unit configured to identify a lower part of the following vehicle detected by the detecting unit, a display video data generating unit configured to set a clipping area of the captured video data so as to include the lower part of the following vehicle identified by the identifying unit, and generate display video data by performing clipping the clipping area from the captured video data, and a display controller configured to cause a display used in the vehicle to display the display video data generated by the display video data generating unit.

Abstract: A vehicular display control device includes a video acquiring unit configured to acquire video data captured by a rear camera configured to capture a rear view of a vehicle, a frequency detecting unit configured to detect a frequency of a driver's action in the vehicle for changing a range of view with respect to a display installed in front of the driver, a video data generating unit configured to clip, when the frequency of the driver's action detected by the frequency detecting unit becomes high, a clipping range in the captured video data acquired by the video acquiring unit wider than a clipping range before the frequency of the driver's action becomes high to generate video data for a predetermined time, and a display controller configured to cause a display installed in front of the driver to display the video data generated by the video data generating unit.

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

Abstract: A vehicular display control device includes a video acquiring unit configured to acquire video data captured by a rear camera configured to capture a rear view of a vehicle, a frequency detecting unit configured to detect a frequency of a driver's action in the vehicle for changing a range of view with respect to a display installed in front of the driver, a video data generating unit configured to clip, when the frequency of the driver's action detected by the frequency detecting unit becomes high, a clipping range in the captured video data acquired by the video acquiring unit wider than a clipping range before the frequency of the driver's action becomes high to generate video data for a predetermined time, and a display controller configured to cause a display installed in front of the driver to display the video data generated by the video data generating unit.