Abstract: A distance-measuring imaging device includes: a drive control unit; a light source unit; an image processing unit including light receiving units and charge reading units arranged one-to-one; and an image processing unit. The charge reading units are arranged partly at the left side of corresponding ones of the light receiving units and partly at the right side of corresponding ones of the same. In each of a period in which the exposure is performed when the exposure control signal is received after a first delay time since when the light emission control signal is received and a period in which the exposure is performed when the exposure control signal is received after a second delay time longer than the first delay time, since when the light emission control signal is received, the left-side charge reading units read charge leftward, and the right-side charge reading units read charge rightward.

Abstract: A distance-measuring/imaging apparatus having a high S/N and a high distance measurement accuracy is provided. The distance-measuring/imaging apparatus includes: a signal generation unit for generating an emission signal and exposure signal; a light source unit for performing light irradiation by receiving the emission signal; an imaging unit for performing exposure by receiving the exposure signal and for acquiring the exposure amount of the reflected light; and a calculation unit for calculating and outputting the distance information on the basis of the exposure amount. The imaging unit acquires a first exposure amount corresponding to the exposure in a first emission/exposure period, in which the exposure is performed by receiving the exposure signal simultaneously with a receiving timing of the emission signal.

Abstract: An imaging apparatus includes: an optical lens; light receiving units each reading a photoelectric conversion signal; microlenses each placed for every two or more of the adjacent light receiving units; a signal generating unit generating (i) a full-addition signal by adding all of the photoelectric conversion signals obtained in a predetermined frame by the two or more adjacent light receiving units, (ii) a partial addition signal by adding the photoelectric conversion signals obtained by at least one but not all of the two or more adjacent light receiving units, and (iii) non-addition independent signals that are the photoelectric conversion signals of one of the light receiving units; a phase difference detecting unit detecting a focal point from the partial addition signal and the non-addition independent signals; and a camera YC processing unit generating a main image from the full-addition signal.

Abstract: This solid-state image sensor includes an array of photosensitive cells and an array of dispersive elements. The photosensitive cell array is comprised of a plurality of unit blocks 40, each including four photosensitive cells 2a, 2b, 2c and 2d. A condensing element 4c is further arranged to cover the photosensitive cells 2a and 2b and condenses incoming light onto the photosensitive cells 2a and 2b.

Abstract: This solid-state image sensor includes an array of photosensitive cells and an array of dispersive elements. The photosensitive cell array is comprised of a plurality of unit blocks 40, each including four photosensitive cells 2a, 2b, 2c and 2d. An optical filter 11a is arranged to cover those photosensitive cells 2a through 2d. A portion of the optical filter 11a that covers the photosensitive cells 2a and 2b is located closer to the imaging area than another portion thereof that covers the photosensitive cells 2c and 2d.

Abstract: This solid-state image sensor includes a photosensitive cell array including first through fourth photosensitive cells 2a to 2d and a light dispersing element array that is arranged to face the photosensitive cell array and that includes first and second types of light dispersing elements 1a, 1b.

Abstract: Read electrodes are provided to drain signal charge of pixels from photoelectric conversion units provided in the pixels separately to a vertical transfer unit. During a first exposure period during which an object is illuminated with infrared light, signal charge obtained from a first pixel, and signal charge obtained from a second pixel adjacent to the first pixel, are added together in the vertical transfer unit to produce first signal charge. During a second exposure period during which the object is not illuminated with infrared light, signal charge obtained from the first pixel, and signal charge obtained from the second pixel adjacent to the first pixel, are transferred without being added to the first signal charge in the vertical transfer unit, and are added together in another packet to produce second signal charge.

Abstract: An imaging apparatus includes: an optical lens; light receiving units each reading a photoelectric conversion signal; microlenses each placed for every two or more of the adjacent light receiving units; a signal generating unit generating (i) a full-addition signal by adding all of the photoelectric conversion signals obtained in a predetermined frame by the two or more adjacent light receiving units, (ii) a partial addition signal by adding the photoelectric conversion signals obtained by at least one but not all of the two or more adjacent light receiving units, and (iii) non-addition independent signals that are the photoelectric conversion signals of one of the light receiving units; a phase difference detecting unit detecting a focal point from the partial addition signal and the non-addition independent signals; and a camera YC processing unit generating a main image from the full-addition signal.

Abstract: A solid-state image sensor includes a photosensitive cell array and a dispersing element array. Each unit block 40 of the photosensitive cell array includes four photosensitive cells 2a, 2b, 2c and 2d.

Abstract: This solid-state image sensor includes an array of photosensitive cells and an array of dispersing elements. The photosensitive cell array is comprised of multiple unit blocks, each of which includes four photosensitive cells arranged two dimensionally. The dispersing element array is arranged so as to face the photosensitive cell array and includes a plurality of dispersing elements. The dispersing element array directs light respectively onto the four photosensitive cells by selectively subtracting certain complementary color components from the incoming white light, and adding a light ray with a selected complementary color component to the remainder. The dispersing element array is configured such that the combination of color component that is subtracted from the incoming light and the color component in the added light ray is selected for the incident light on each of the four photosensitive cells.

Abstract: This solid-state image sensor includes a photosensitive cell array including first through fourth photosensitive cells 2a to 2d, a dispersing element array including first and second dispersing elements 1a and 1b arranged to face the first and third photosensitive cells 2a and 2c, respectively, and a microlens array including first and second microlenses 4a and 4b. The first dispersing element 1a makes parts of incoming light that have come through the first microlens 4a and that have first and second color components incident on the first and second photosensitive cells 2a and 2b, respectively. The second dispersing element 1b makes parts of incoming light that have come through the second microlens 4b and that have third and fourth color components incident on the third and fourth photosensitive cells 2c and 2d, respectively. In addition, light that has not passed through the first and second microlenses 4a and 4b is also incident on the second and fourth photosensitive cells 2b and 2d.

Abstract: This solid-state image sensor 10 includes an array of photosensitive cells and an array of dispersing elements. The photosensitive cell array is comprised of multiple unit blocks 40, each of which includes four photosensitive cells 2a, 2b, 2c and 2d.

Abstract: This solid-state image sensor includes an array of photosensitive cells and an array of dispersive elements. The photosensitive cell array is comprised of a plurality of unit blocks 40, each including four photosensitive cells 2a, 2b, 2c and 2d. An optical filter 11a is arranged to cover those photosensitive cells 2a through 2d. A portion of the optical filter 11a that covers the photosensitive cells 2a and 2b is located closer to the imaging area than another portion thereof that covers the photosensitive cells 2c and 2d.

Abstract: This solid-state image sensor includes a photosensitive cell array including first through fourth photosensitive cells 2a to 2d and a light dispersing element array that is arranged to face the photosensitive cell array and that includes first and second types of light dispersing elements 1a, 1b.

Abstract: This solid-state image sensor includes an array of photosensitive cells and an array of dispersive elements. The photosensitive cell array is comprised of a plurality of unit blocks 40, each including four photosensitive cells 2a, 2b, 2c and 2d. A condensing element 4c is further arranged to cover the photosensitive cells 2a and 2b and condenses incoming light onto the photosensitive cells 2a and 2b.

Abstract: In a basic pixel arrangement of a solid-state image sensor, a dispersing element is arranged to face each of pixels that are located at row 1, column 2 and row 3, column 1 positions in order to make a light ray with a first color component incident on a horizontally adjacent pixel and also make a light ray with a complementary color component with respect to the first color component incident on that pixel that faces the dispersing element. A dispersing element is arranged to face each of pixels that are located at row 2, column 1 and row 4, column 1 positions in order to make a light ray with a second color component incident on a horizontally adjacent pixel and also make a light ray with a complementary color component with respect to the second color component incident on that pixel that faces the dispersing element. On the other hand, no dispersing elements are arranged to face pixels that are located at row 1, column 1, row 2, column 2, row 3, column 2 and row 4, column 2 positions.

Abstract: A solid-state image sensor includes a photosensitive cell array and a dispersing element array. Each unit block 40 of the photosensitive cell array includes four photosensitive cells 2a, 2b, 2c and 2d.

Abstract: In a basic pixel arrangement of a solid-state image sensor, a dispersing element is arranged to face each of pixels that are located at row 1, column 2 and row 3, column 1 positions in order to make a light ray with a first color component incident on a horizontally adjacent pixel and also make a light ray with a complementary color component with respect to the first color component incident on that pixel that faces the dispersing element. A dispersing element is arranged to face each of pixels that are located at row 2, column 1 and row 4, column 1 positions in order to make a light ray with a second color component incident on a horizontally adjacent pixel and also make a light ray with a complementary color component with respect to the second color component incident on that pixel that faces the dispersing element. On the other hand, no dispersing elements are arranged to face pixels that are located at row 1, column 1, row 2, column 2, row 3, column 2 and row 4, column 2 positions.

Abstract: Color signals that have passed through a multilayer film filter and been photoelectrically converted are inputted into an image processing LSI. A color signal processing section of the image processing LSI corrects the color signals on a color matrix. The color matrix is divided into a plurality of regions corresponding to the color signals, and the correction is made for each of the regions.

Abstract: A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets an accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).