Abstract: A memory controller includes an address converter configured to convert an address designated by a host device for writing and reading into a physical address of a non-volatile memory, and an invalid-area manager configured to manage an invalid area of the non-volatile memory, the address converter making no reference to the invalid area, and, upon receipt of an invalid-data read command from the host device, data in the invalid area, managed by the invalid-area manager, of the non-volatile memory is output to the host device.

Abstract: A memory controller includes a data discard controller, calculates a physical address of discard object data designated by a logical address by a host device, and registers the calculated physical address as discard object data information. With respect to a predetermined command from the host device, the data discard controller outputs current discard object data information to the host device. When no command is received from the host device, the data discard controller physically erases the discard object data on the basis of the discard object data information.

Abstract: A memory controller includes: a memory that holds a physical block counter including the number of erase times, a logical block counter including the number of write times, and a logical-physical conversion table; and a control unit that writes data to any physical block address. When the control unit receives a writing data instruction, the control unit updates the number of write times corresponding to the write destination logical block address, if the number of write times corresponding to the write destination logical block address is large, the control unit allocates to the write destination logical block address a physical block address with the number of erase times which is small among spare blocks not allocated to the logical block addresses in the logical-physical conversion table, updates the number of erase times corresponding to the allocated physical block address, and updates the logical-physical conversion table.

Abstract: A non-volatile storage device of the present disclosure includes non-volatile memory configured to have a plurality of areas for storing data, and a memory controller configured to write the data to the non-volatile memory and to read the data from the non-volatile memory. The memory controller includes a memory interface (I/F) connected to the non-volatile memory, a threshold calculator calculating a threshold for the number of error bits of the data based on a storage condition in the case of storing the data in the non-volatile memory without power, and a refresh controller determining whether refresh processing of the data is necessary, based on the threshold and the number of error bits of the data, and executing the refresh processing of the data if the refresh processing of the data is necessary.

Abstract: A memory controller controls a nonvolatile memory having physical blocks. The memory controller includes a control unit and a host interface unit. The control unit writes data into a physical block. The host interface unit receives and transmits data from and to the external device. The control unit manages first vacant blocks and second vacant blocks based on a physical-block management table for managing states of the physical blocks. The first vacant block can be used in garbage collection processing of arranging data stored in the nonvolatile memory. The second vacant block cannot be used in garbage collection processing. The control unit increases a quantity of the second vacant blocks when the control unit does not receive an instruction from the external device. The control unit writes data into the second vacant blocks when the control unit receives an instruction for writing data from the external device.

Abstract: A non-volatile storage device of the present disclosure includes non-volatile memory configured to have a plurality of areas for storing data, and a memory controller configured to write the data to the non-volatile memory and to read the data from the non-volatile memory. The memory controller includes a memory interface (I/F) connected to the non-volatile memory, a threshold calculator calculating a threshold for the number of error bits of the data based on a storage condition in the case of storing the data in the non-volatile memory without power, and a refresh controller determining whether refresh processing of the data is necessary, based on the threshold and the number of error bits of the data, and executing the refresh processing of the data if the refresh processing of the data is necessary.

Abstract: A memory controller includes: a memory that holds a physical block counter including the number of erase times, a logical block counter including the number of write times, and a logical-physical conversion table; and a control unit that writes data to any physical block address. When the control unit receives a writing data instruction, the control unit updates the number of write times corresponding to the write destination logical block address, if the number of write times corresponding to the write destination logical block address is large, the control unit allocates to the write destination logical block address a physical block address with the number of erase times which is small among spare blocks not allocated to the logical block addresses in the logical-physical conversion table, updates the number of erase times corresponding to the allocated physical block address, and updates the logical-physical conversion table.

Abstract: The electric-vehicle control device is used in an electric vehicle which is provided with a vehicle body having a driving tire and an axle shaft and with a driving motor which imparts torque to the driving tire. The electric-vehicle control device issues a motor control command to the driving motor. The electric-vehicle control device is provided with a control unit, and the control unit gives feedback control to the driving motor by vibration parameters indicating vertical vibration of the electric vehicle at the center of the axle shaft.

Abstract: It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.

Abstract: A host device includes a voltage source which is connected to a voltage line via a host voltage switch and which supplies a first voltage to the voltage line, a host regulator which is connected to the voltage line and which outputs the first voltage or a second voltage that is lower than the first voltage, a host IO driver for driving a data line with the output of the host regulator as a power source, a host voltage detection circuit for detecting whether the voltage of the data line is the second voltage or a voltage that is higher than the second voltage, and a host control unit for detecting a mismatch of interface voltages between the host device and a memory card based on the output voltage of the host regulator and the detection result of the host voltage detection circuit.

Abstract: A non-volatile storage device, which communicates with an access device and carries out reading and/or writing of data in accordance with a command from the access device, the device comprises one or more non-volatile memories for storing data and a memory controller for carrying out control of the non-volatile memory. The memory controller writes data to the error correcting group and writes a provisional error correcting code with respect to the data to the parity table if a data size is smaller than the first size when writing the data.

Abstract: A non-volatile storage device comprises non-volatile memories for storing data; and a memory controller for carrying out control of the non-volatile memory. The memory controller stores second error correcting code as well as first error correcting code stored in the same page of the data. The memory controller, when writing data smaller than a predefined size, does not add the second error correcting code, and stores duplexed data of the data and the first correcting code in a different page. The memory controller, when reading, corrects data using the first and/or second correcting code. The valid data management table manages which logical block stores valid data with respect to an identical logical address.

Abstract: Upon copying data stored on a page in a copy source block of a nonvolatile memory to a page of a copy destination block, an access control unit of a memory controller copies data stored on a page associated with a first copy method to a page of the copy destination block after error correction by an error correction control unit copies data stored on a page associated with a second copy method to a page of the copy destination block without performing the error correction by the error correction control unit according to a copy mode stored in a copy mode storage area, and changes the copy mode associated with the copy destination block to a copy mode that is different from the copy mode of the copy source block.

Abstract: A memory controller includes a reading/writing control unit for controlling writing and reading of data to and from a physical block of a nonvolatile memory, a writing mode table for storing one of a first writing mode of protecting data against a power shutdown during writing and a second writing mode of writing data at a higher speed than the first writing mode, and a setting unit for setting the writing mode received from an access device in a writing mode table. The reading/writing control unit performs data writing based on the writing mode that has been set in the writing mode table.

Abstract: The memory controller writes and reads data in and from a nonvolatile memory. The nonvolatile memory has a plurality of memory cell blocks, each memory cell block includes a plurality of multi-level cells each capable of storing m-bit data (m is a natural number of two or more), a first page to a m-th page are allocated to the respective m bits of the multi-level cell, the memory controller sequentially writes the data to the memory cells from the first page in ascending order, and comprises a backup unit, and when a write command is received from the outside of the memory controller, in a case where a data write destination of the data in the nonvolatile memory is a n-th (n is a natural number of two to m) page of the multi-level cell, and data is already written in the first to (n-1)th pages, the backup unit copies the already written data to a nonvolatile storable backup region.

Abstract: An access device 100 includes an access speed information part 112 for informing an access speed required for data recording by the access device 100 to a nonvolatile memory device 200. The nonvolatile memory device includes an access condition determination part 212 for determining an access condition required for meeting the informed access speed and an access area determination unit 213 for determining an access area according to the determined access condition. The access device 100 informs the required access speed to the nonvolatile memory device 200 in advance so that the access condition determination part 212 and the access area determination part 213 in the nonvolatile memory device 200 realize data recording which meets the access speed informed in advance upon the data recording. Thus, it is possible to access all the nonvolatile memory devices at a desired speed regardless of difference in characteristics of the recording speed of each of the nonvolatile memory devices.

Abstract: A non-volatile storage device includes one or more non-volatile memories for storing data, and a memory controller for carrying out the control of the non-volatile memory. The non-volatile memory includes the plurality of blocks, which are erase units, and the block includes the plurality of pages, which are write units of data, in each of the blocks at least one set of pages existing which include at least two pages sharing one word line. The memory controller configures a plurality of error correcting groups, each including at least one data page, which is a page for storing data, and at least one error correcting code page for storing a code for error correcting calculation of the data page, and assigns a page of a separate word line with respect to each of the data page and the error correcting page in the same error correcting group.

Abstract: A flash memory unit includes a plurality of physical blocks including a plurality of memory cells and serving as erase units of data, wherein each of the memory cells is capable of recording information of 1 bit or more and degradation in the characteristics of the memory cells differs according to the amount of information that is recorded. A controller includes a control unit for controlling the reading, writing and erasure of data to and from the flash memory unit, and a degradation level table for recording a degradation level of the memory cells in physical block units. The control unit stores, in the degradation level table, the degradation level of the memory cells according to the amount of information stored in the memory cells for each cycle of data erasure from the physical blocks.

Abstract: A nonvolatile memory system includes a memory card (102) and host equipment (101). The memory card (102) includes a nonvolatile memory (106) including a plurality of physical blocks, and a memory controller (105) for writing data into the nonvolatile memory (106). The host equipment (101) provides to the memory card (102) an access instruction that designates a logical address and a channel number. The memory controller (105) has an address conversion function for converting the logical address into a physical address in the nonvolatile memory (106), a write destination determination function for determining in relation to the channel number a physical address in the nonvolatile memory (106) to which the data is to be written, and a channel management function for individually managing for each channel number a write state in which data of a smaller size than each physical block is written.

Abstract: A nonvolatile storage device includes a nonvolatile memory that stores data and a memory controller that controls the nonvolatile memory. The memory controller accepts a pause instruction to pause writing from the access device within a period in which data from the access device are written, and writes the data received from the access device to the nonvolatile memory within a predetermined time interval, then pauses the writing and accepts read and/or write of new data from the access device.