Patents by Inventor Toshiyuki Ikedo

Toshiyuki Ikedo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11904401
    Abstract: A practical plasma processing machine is provided, in which attachment mechanism is provided for attaching plasma head to attachment section of a head moving device that moves the plasma head. Since the plasma head can be attached or detached, for example, it is easy to exchange it with a different type of plasma head, remove for maintenance, attaching after maintenance, or the like.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: February 20, 2024
    Assignee: FUJI CORPORATION
    Inventors: Toshiyuki Ikedo, Takahiro Jindo
  • Patent number: 11632851
    Abstract: A plasma emitting device includes plasma head configured to generate a plasmarized gas and jet the plasmarized gas so generated from a nozzle thereof, a gas supply device configured to supply a gas to the plasma head while controlling a flow rate of the gas, gas tube connecting the gas supply device with the plasma head to constitute a gas flow path, and pressure detector configured to detect a pressure of the gas supplied from the gas supply deice. Pressures of gases which are supplied to the plasma head are detected for use for various purposes, whereby the practical plasma emitting device is made up. Specifically, for example, a head clogging, which is a clog impeding a gas flow in the plasma head, can be determined without difficulty based on the detected pressure.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: April 18, 2023
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo, Shinji Takikawa, Akihiro Niwa
  • Patent number: 11295932
    Abstract: Atmospheric-pressure plasma generation device of the present invention includes heat sinks. Flow paths are formed in the heat sinks, and cooling gas flows in the flow paths, thereby cooling lower housing in which a reaction chamber is formed. Here, the gas used for cooling is warmed by the heat of the lower housing. The warmed gas is supplied into heated gas supply device and heated by heater. The heated gas flows in lower cover and is emitted together with plasma gas from lower cover toward a processing object. Consequently, it is possible to perform cooling of the lower housing heated by electric discharge and perform heating of the processing object, and it is possible to reduce energy required for heating gas.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: April 5, 2022
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo
  • Patent number: 11259396
    Abstract: A plasma generation system capable of more accurately measuring the actual temperature of a plasma gas applied to a target object. The plasma generation system includes: an emitting head configured to generate plasma gas by supplying power to electrodes provided in a reaction chamber to generate a plasma gas by converting a processing gas into plasma, and apply the generated plasma gas to a target object; and a temperature sensor configured to detect a temperature of the plasma gas and output a detection signal corresponding to the detected temperature. The temperature sensor is arranged at a position separated from an emission port of the emitting head from which the plasma gas is emitted. The emitting head is configured to be movable between the target object the temperature sensor.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: February 22, 2022
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo
  • Patent number: 11195702
    Abstract: A plasma-generating device including: a pair of electrodes; a pair of holders configured to hold ends of the pair of electrodes in a protruding state; and a casing in which is formed a first recess and that is configured to combine with the pair of holders in a state with the ends of the pair of electrodes that protrude from the pair of holders inserted into the first recess, wherein the combined casing and the pair of holders contact each other only at an opposite side to a side between the ends of the pair of electrodes that project from the pair of holders.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: December 7, 2021
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo
  • Publication number: 20210151293
    Abstract: Atmospheric-pressure plasma generation device 10 of the present invention includes heat sinks 27 and 28. Flow paths are formed in the heat sinks, and cooling gas flows in the flow paths, thereby cooling lower housing 20 in which a reaction chamber is formed. Here, the gas used for cooling is warmed by the heat of the lower housing. The warmed gas is supplied into heated gas supply device 14 and heated by heater 112. The heated gas flows in lower cover 22 and is emitted together with plasma gas from lower cover 22 toward a processing object. Consequently, it is possible to perform cooling of the lower housing heated by electric discharge and perform heating of the processing object, and it is possible to reduce energy required for heating gas.
    Type: Application
    Filed: August 11, 2016
    Publication date: May 20, 2021
    Applicant: FUJI CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO
  • Publication number: 20210111006
    Abstract: A plasma-generating device including: a pair of electrodes; a pair of holders configured to hold ends of the pair of electrodes in a protruding state; and a casing in which is formed a first recess and that is configured to combine with the pair of holders in a state with the ends of the pair of electrodes that protrude from the pair of holders inserted into the first recess, wherein the combined casing and the pair of holders contact each other only at an opposite side to a side between the ends of the pair of electrodes that project from the pair of holders.
    Type: Application
    Filed: April 4, 2017
    Publication date: April 15, 2021
    Applicant: FUJI CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO
  • Patent number: 10950420
    Abstract: An atmospheric pressure plasma device including a plasma head; a gas tube configured to supply a gas to the plasma head; a flow rate controller configured to control a flow rate of the gas supplied to the gas tube; a pressure sensor arranged downstream of the flow rate controller and configured to detect a pressure in the gas tube; and a determining section configured to determine a state of the device based on how the pressure in the gas tube deviates from a standard value specified for each flow rate of the supplied gas. As a result, it is possible to determine the gas leakage of the atmospheric pressure plasma device. Further, it is possible to determine whether plasma is being generated in a favorable state.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: March 16, 2021
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo, Akihiro Niwa
  • Publication number: 20210076480
    Abstract: A practical plasma processing machine is provided, in which attachment mechanism is provided for attaching plasma head to attachment section of a head moving device that moves the plasma head. Since the plasma head can be attached or detached, for example, it is easy to exchange it with a different type of plasma head, remove for maintenance, attaching after maintenance, or the like.
    Type: Application
    Filed: January 30, 2018
    Publication date: March 11, 2021
    Applicant: FUJI CORPORATION
    Inventors: Toshiyuki IKEDO, Takahiro JINDO
  • Patent number: 10879047
    Abstract: In a plasma generator, a reaction chamber is divided into a pair of insertion portions, for inserting a pair of electrodes, and a connecting segment that connects the pair of insertion portions. The connecting segment is narrower than the pair of insertion portions. Since the connecting segment is narrower than the insertion portions, the volume of the connecting segment is small. Accordingly, the process gas having a small volume is converted into plasma over the entire region of the connecting segment and along the wall surfaces that are continuous from each insertion portion to the connecting segment, thereby enabling the process gas to be converted to plasma efficiently. Further, the junctures of each of the pair of insertion portions and the connecting segment are smooth surfaces. As a result, heat from discharging is dispersed over the entire smooth surface, thereby suppressing carbonization from discharging.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: December 29, 2020
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo
  • Publication number: 20200396821
    Abstract: A plasma emitting device includes plasma head configured to generate a plasmarized gas and jet the plasmarized gas so generated from a nozzle thereof, a gas supply device configured to supply a gas to the plasma head while controlling a flow rate of the gas, gas tube connecting the gas supply device with the plasma head to constitute a gas flow path, and pressure detector configured to detect a pressure of the gas supplied from the gas supply device. Pressures of gases which are supplied to the plasma head are detected for use for various purposes, whereby the practical plasma emitting device is made up. Specifically, for example, a head clogging, which is a clog impeding a gas flow in the plasma head, can be determined without difficulty based on the detected pressure.
    Type: Application
    Filed: December 20, 2017
    Publication date: December 17, 2020
    Applicant: FUJl CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO, Shinji TAKIKAWA, Akihiro NIWA
  • Patent number: 10734194
    Abstract: Plasma generating apparatus includes a pair of electrodes configured to generate plasma by discharge, a first supply path configured to supply processing gas along an outer periphery of each of the pair of electrodes, a second supply path configured to supply processing gas between the pair of electrodes, and a suction path configured to suck the processing gas supplied along an outer peripheral surface of each of the pair of electrodes via the first supply path.
    Type: Grant
    Filed: November 24, 2016
    Date of Patent: August 4, 2020
    Assignee: FUJI CORPORATION
    Inventors: Takahiro Jindo, Toshiyuki Ikedo
  • Publication number: 20200118801
    Abstract: An atmospheric pressure plasma device including a plasma head; a gas tube configured to supply a gas to the plasma head; a flow rate controller configured to control a flow rate of the gas supplied to the gas tube; a pressure sensor arranged downstream of the flow rate controller and configured to detect a pressure in the gas tube; and a determining section configured to determine a state of the device based on how the pressure in the gas tube deviates from a standard value specified for each flow rate of the supplied gas. As a result, it is possible to determine the gas leakage of the atmospheric pressure plasma device. Further, it is possible to determine whether plasma is being generated in a favorable state.
    Type: Application
    Filed: April 4, 2017
    Publication date: April 16, 2020
    Applicant: FUJI CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO, Akihiro NIWA
  • Publication number: 20200060017
    Abstract: A plasma generation system capable of more accurately measuring the actual temperature of a plasma gas applied to a target object. The plasma generation system includes: an emitting head configured to generate plasma gas by supplying power to electrodes provided in a reaction chamber to generate a plasma gas by converting a processing gas into plasma, and apply the generated plasma gas to a target object; and a temperature sensor configured to detect a temperature of the plasma gas and output a detection signal corresponding to the detected temperature. The temperature sensor is arranged at a position separated from an emission port of the emitting head from which the plasma gas is emitted. The emitting head is configured to be movable between the target object the temperature sensor.
    Type: Application
    Filed: April 4, 2017
    Publication date: February 20, 2020
    Applicant: FUJI CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO
  • Publication number: 20190378694
    Abstract: Plasma generating apparatus includes a pair of electrodes configured to generate plasma by discharge, a first supply path configured to supply processing gas along an outer periphery of each of the pair of electrodes, a second supply path configured to supply processing gas between the pair of electrodes, and a suction path configured to suck the processing gas supplied along an outer peripheral surface of each of the pair of electrodes via the first supply path.
    Type: Application
    Filed: November 24, 2016
    Publication date: December 12, 2019
    Applicant: FUJI CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO
  • Patent number: 10343132
    Abstract: Water is flowed inside main body section formed from an insulating material such that a specified space remains inside the main body section. Electrodes and are arranged along the outer walls of the main body section and voltage is applied to the electrodes. Processing gas present inside the main body section is plasmarized and plasma is emitted to the water flowing inside the main body section.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: July 9, 2019
    Assignee: FUJI CORPORATION
    Inventors: Akihiro Niwa, Takahiro Jindo, Toshiyuki Ikedo
  • Publication number: 20190131109
    Abstract: In a plasma generator, a reaction chamber is divided into a pair of insertion portions, for inserting a pair of electrodes, and a connecting segment that connects the pair of insertion portions. The connecting segment is narrower than the pair of insertion portions. Since the connecting segment is narrower than the insertion portions, the volume of the connecting segment is small. Accordingly, the process gas having a small volume is converted into plasma over the entire region of the connecting segment and along the wall surfaces that are continuous from each insertion portion to the connecting segment, thereby enabling the process gas to be converted to plasma efficiently. Further, the junctures of each of the pair of insertion portions and the connecting segment are smooth surfaces. As a result, heat from discharging is dispersed over the entire smooth surface, thereby suppressing carbonization from discharging.
    Type: Application
    Filed: March 14, 2016
    Publication date: May 2, 2019
    Applicant: FUJI CORPORATION
    Inventors: Takahiro JINDO, Toshiyuki IKEDO
  • Patent number: 9960017
    Abstract: Plasma gas is ejected from inner gas ejection ports that are formed in a downstream side housing, and nitrogen gas is supplied as protective gas to a protective gas source between a housing and a cover section. Nitrogen gas is sucked in accompanying exhaust from inner gas ejection ports of plasma gas, and is ejected from the outer gas ejection ports. In this case, since a layer of nitrogen gas is formed in the periphery of plasma gas, it is possible to make it difficult to bring the plasma gas into contact with air, and it is possible to make it difficult to react a reactive species such as a radical in the plasma gas, oxygen in the air, and the like.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: May 1, 2018
    Assignee: FUJI MACHINE MFG. CO., LTD.
    Inventors: Toshiyuki Ikedo, Takahiro Jindo
  • Publication number: 20170287679
    Abstract: Plasma gas is ejected from inner gas ejection ports that are formed in a downstream side housing, and nitrogen gas is supplied as protective gas to a protective gas source between a housing and a cover section. Nitrogen gas is sucked in accompanying exhaust from inner gas ejection ports of plasma gas, and is ejected from the outer gas ejection ports. In this case, since a layer of nitrogen gas is formed in the periphery of plasma gas, it is possible to make it difficult to bring the plasma gas into contact with air, and it is possible to make it difficult to react a reactive species such as a radical in the plasma gas, oxygen in the air, and the like.
    Type: Application
    Filed: September 16, 2014
    Publication date: October 5, 2017
    Applicant: FUJI MACHINE MFG. CO., LTD
    Inventors: Toshiyuki IKEDO, Takahiro JINDO
  • Patent number: D951194
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: May 10, 2022
    Assignee: FUJI CORPORATION
    Inventors: Toshiyuki Ikedo, Takuya Iwata