Patents by Inventor Toshiyuki Isa
Toshiyuki Isa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170315589Abstract: An electronic device with a large display region and improved portability is provided. An electronic device with improved reliability is provided. The information processing device includes a first film, a second film, a panel substrate, and at least a first housing. The panel substrate has flexibility and includes a display region. The first film has visible light transmittance and flexibility, and the second film has flexibility. The first housing includes a first slit, the panel substrate includes a region interposed between the first film and the second film, the first slit is configured to store the region, and one or more of the panel substrate, the first film, and the second film can slide along the first slit.Type: ApplicationFiled: April 26, 2017Publication date: November 2, 2017Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki ISA, Akio ENDO, Yosuke TSUKAMOTO, Jun KOYAMA
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Patent number: 9720277Abstract: A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.Type: GrantFiled: August 4, 2011Date of Patent: August 1, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Toriumi, Toshiyuki Isa
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Patent number: 9519183Abstract: A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.Type: GrantFiled: August 4, 2011Date of Patent: December 13, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Toriumi, Toshiyuki Isa
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Patent number: 9356152Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: GrantFiled: January 27, 2014Date of Patent: May 31, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Patent number: 9356082Abstract: To improve image quality of a full-color organic EL display panel. A partition has a stacked structure formed using different materials. A lower partition has a curved shape, and an upper partition has a flat top surface. An angle formed between a plane surface connecting a lower end of a side surface with an upper end of the side surface of the upper partition and the top surface of the upper partition is less than or equal to 90°. The height of the partition is controlled to be greater than or equal to 0.5 ?m and less than or equal to 1.3 ?m. With such a structure, a large color organic EL display panel achieves high-definition display.Type: GrantFiled: March 13, 2015Date of Patent: May 31, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Toshiyuki Isa
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Publication number: 20160027967Abstract: A novel stacked structure that is highly convenient or reliable is provided. A method for manufacturing a novel stacked structure that is highly convenient or reliable is also provided. Furthermore, a novel semiconductor device is provided. The stacked structure includes first to fifth regions in this order. Each of the first to fifth regions includes a first base and a second base. The first region, the third region, and the fifth region each include a spacer that makes a predetermined distance between the first base and the second base.Type: ApplicationFiled: July 21, 2015Publication date: January 28, 2016Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Toshiyuki ISA
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Publication number: 20150325631Abstract: A highly reliable display device or electronic appliance is provided. The display device or a light-emitting device includes a substrate; a light-emitting element including a first electrode, an EL layer, and a second electrode; an organic resin film in contact with the light-emitting element; and an oxide semiconductor film in contact with the light-emitting element and the organic resin film. The oxide semiconductor film is in contact with the first electrode or the second electrode included in the light-emitting element. The oxide semiconductor film is in contact with an exposed portion of the organic resin film, typically, a side surface of the organic resin film. The light-emitting element and the organic resin film are positioned between the substrate and the oxide semiconductor film.Type: ApplicationFiled: May 6, 2015Publication date: November 12, 2015Inventors: Shunpei YAMAZAKI, Shingo EGUCHI, Toshiyuki ISA, Sayaka KAGA
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Patent number: 9184221Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.Type: GrantFiled: March 26, 2015Date of Patent: November 10, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuhiro Jinbo, Toshiyuki Isa, Tatsuya Honda
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Publication number: 20150270321Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.Type: ApplicationFiled: March 26, 2015Publication date: September 24, 2015Inventors: Yasuhiro JINBO, Toshiyuki ISA, Tatsuya Honda
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Publication number: 20150187852Abstract: To improve image quality of a full-color organic EL display panel. A partition has a stacked structure formed using different materials. A lower partition has a curved shape, and an upper partition has a flat top surface. An angle formed between a plane surface connecting a lower end of a side surface with an upper end of the side surface of the upper partition and the top surface of the upper partition is less than or equal to 90°. The height of the partition is controlled to be greater than or equal to 0.5 ?m and less than or equal to 1.3 ?m. With such a structure, a large color organic EL display panel achieves high-definition display.Type: ApplicationFiled: March 13, 2015Publication date: July 2, 2015Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Toshiyuki Isa
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Patent number: 9069202Abstract: Provided are a liquid crystal display device with horizontal electric field mode, in which a decrease in driving speed can be suppressed by reducing the resistance of a wiring even when the number of pixels is increased, and a manufacturing method thereof. One of a scan wiring and a signal wiring is divided in an intersection portion where the scan wiring and the signal wiring intersect with each other, and the separated wirings are connected with a connection electrode positioned over a thick insulating film. Accordingly, parasitic capacitance at the intersection portion can be reduced, preventing the decrease in the driving speed. The connection electrode is formed at the same time as formation of a pixel electrode and a common electrode using a low-resistance metal, which contributes to the reduction in manufacturing process of the liquid crystal display device.Type: GrantFiled: February 29, 2012Date of Patent: June 30, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Miyairi, Tetsuji Ishitani, Daisuke Kubota, Toshiyuki Isa, Kouhei Toyotaka, Susumu Kawashima
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Patent number: 8994060Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.Type: GrantFiled: June 21, 2011Date of Patent: March 31, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuhiro Jinbo, Toshiyuki Isa, Tatsuya Honda
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Patent number: 8981638Abstract: To improve image quality of a full-color organic EL display panel. A partition has a stacked structure formed using different materials. A lower partition has a curved shape, and an upper partition has a flat top surface. An angle formed between a plane surface connecting a lower end of a side surface with an upper end of the side surface of the upper partition and the top surface of the upper partition is less than or equal to 90°. The height of the partition is controlled to be greater than or equal to 0.5 ?m and less than or equal to 1.3 ?m. With such a structure, a large color organic EL display panel achieves high-definition display.Type: GrantFiled: July 31, 2013Date of Patent: March 17, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Toshiyuki Isa
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Patent number: 8956934Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.Type: GrantFiled: December 6, 2012Date of Patent: February 17, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Miyako Nakajima, Hidekazu Miyairi, Toshiyuki Isa, Erika Kato, Mitsuhiro Ichijo, Kazutaka Kuriki, Tomokazu Yokoi
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Patent number: 8742421Abstract: An object of the present invention is to provide a display device which can be manufactured with usability of a material improved and with a manufacturing step simplified and to provide a manufacturing technique thereof. One feature of a display device of the present invention is to comprise an insulating layer having an opening, a first conductive layer formed in the opening, and a second conductive layer formed over the insulating layer and the first conductive layer, wherein the first conductive layer is wider and thicker than the second conductive layer, and the second conductive layer is formed by spraying a droplet including a conductive material.Type: GrantFiled: November 29, 2004Date of Patent: June 3, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hideaki Kuwabara, Shinji Maekawa, Gen Fujii, Toshiyuki Isa
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Publication number: 20140138680Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: ApplicationFiled: January 27, 2014Publication date: May 22, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Patent number: 8648346Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: GrantFiled: September 23, 2011Date of Patent: February 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Publication number: 20140035456Abstract: To improve image quality of a full-color organic EL display panel. A partition has a stacked structure formed using different materials. A lower partition has a curved shape, and an upper partition has a flat top surface. An angle formed between a plane surface connecting a lower end of a side surface with an upper end of the side surface of the upper partition and the top surface of the upper partition is less than or equal to 90°. The height of the partition is controlled to be greater than or equal to 0.5 ?m and less than or equal to 1.3 ?m. With such a structure, a large color organic EL display panel achieves high-definition display.Type: ApplicationFiled: July 31, 2013Publication date: February 6, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Toshiyuki Isa
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Patent number: 8637866Abstract: A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.Type: GrantFiled: June 24, 2009Date of Patent: January 28, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Yasuhiro Jinbo, Sachiaki Tezuka, Koji Dairiki, Hidekazu Miyairi, Shunpei Yamazaki, Takuya Hirohashi
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Patent number: 8624254Abstract: A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.Type: GrantFiled: September 7, 2011Date of Patent: January 7, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuji Egi, Tetsuhiro Tanaka, Toshiyuki Isa, Hidekazu Miyairi, Koji Dairiki, Yoichi Kurosawa, Kunihiko Suzuki