Patents by Inventor Toshiyuki Ohdaira

Toshiyuki Ohdaira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low dielectric constant insulating film and method of forming the same
    Publication number: 20060251825
    Abstract: The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.
    Type: Application
    Filed: June 26, 2006
    Publication date: November 9, 2006
    Applicants: National Institute of Advanced Industrial Science and Technology, Semiconductor Process Laboratory Co., Ltd.
    Inventors: Toshiyuki Ohdaira, Yoshimi Shioya
  • Low dielectric constant insulating film and method of forming the same
    Patent number: 7132171
    Abstract: The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: November 7, 2006
    Assignees: National Institute of Advanced Industrial Science and Technology, Semiconductor Process Laboratory Co., Ltd.
    Inventors: Toshiyuki Ohdaira, Yoshimi Shioya
  • Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system
    Publication number: 20050263719
    Abstract: The present invention relates to an ultraviolet ray generator 101, and the generator 101 has an ultraviolet ray lamp 1, a protective tube 2 being made of a material which is transparent with respect to ultraviolet ray and housing the ultraviolet ray lamp 1, and gas introduction port 6a introducing nitrogen gas or inert gas into the protective tube 2.
    Type: Application
    Filed: March 22, 2005
    Publication date: December 1, 2005
    Inventors: Toshiyuki Ohdaira, Yoshimi Shioya
  • Low dielectric constant insulating film and method of forming the same
    Publication number: 20050003213
    Abstract: The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.
    Type: Application
    Filed: May 18, 2004
    Publication date: January 6, 2005
    Inventors: Toshiyuki Ohdaira, Yoshimi Shioya