Patents by Inventor Toshiyuki Samejima
Toshiyuki Samejima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8305538Abstract: A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: GrantFiled: September 22, 2011Date of Patent: November 6, 2012Assignee: Mikuni Electoron Co., Ltd.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20120149139Abstract: A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture: forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode, forming a separate thin film semiconductor layer component, and a contact hole, forming a source electrode, a drain electrode, a common electrode at the center of a pixel and a comb common electrode, such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided.Type: ApplicationFiled: December 22, 2011Publication date: June 14, 2012Applicant: MIKUNI ELECTORON CO. LTD.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20120094416Abstract: A method of fabricating MVA active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed three times for the manufacture: forming a gate electrode, a pixel electrode, a common electrode and a contact pad in said pixel electrode, forming a separate thin film semiconductor layer component, and a contact hole,forming a source electrode, a drain electrode and an orientation control electrode such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided.Type: ApplicationFiled: December 22, 2011Publication date: April 19, 2012Applicant: MIKUNI ELECTORON CO. LTD.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20120038875Abstract: A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: ApplicationFiled: September 22, 2011Publication date: February 16, 2012Applicant: MIKUNI ELECTORON CO. LTD.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Patent number: 8094274Abstract: A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: GrantFiled: September 11, 2009Date of Patent: January 10, 2012Assignee: Mikuni Electoron Co., Ltd.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20100309420Abstract: An active matrix vertical alignment liquid crystal display apparatus comprises a transparent pixel electrode formed on a transparent substrate of TFT, and another transparent pixel electrode is connected to a drain electrode of the transparent substrate of TFT. A transparent insulating film is provided on the transparent pixel electrodes; and a plurality of slender slits are provided and have liquid crystal alignment power in the transparent pixel electrode, wherein the liquid crystal alignment control electrodes which are slender formed on the transparent insulating layer, and the liquid crystal alignment control electrode are connected to the transparent pixel electrode, and a transparent common electrode is located on an opposite transparent substrate, which is positioned opposite to the transparent TFT substrate, and the transparent TFT substrate is connected to common electrodes formed on the transparent TFT substrate.Type: ApplicationFiled: August 19, 2010Publication date: December 9, 2010Applicant: MIKUNI ELECTORON CO. LTD.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20100066962Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: ApplicationFiled: September 11, 2009Publication date: March 18, 2010Applicant: MIKUNI ELECTORON CO. LTD.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20100066930Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: ApplicationFiled: September 11, 2009Publication date: March 18, 2010Applicant: MIKUNI ELECTORON CO. LTD.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20100066931Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: ApplicationFiled: September 11, 2009Publication date: March 18, 2010Applicant: Mikuni Electoron Co. Ltd.Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Patent number: 7602456Abstract: The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.Type: GrantFiled: May 16, 2007Date of Patent: October 13, 2009Assignee: Mikuni Electoron Co. LtdInventors: Sakae Tanaka, Toshiyuki Samejima
-
Patent number: 7573271Abstract: An apparatus for measuring electric characteristics of a semiconductor includes a light irradiating means for irradiating light to a characteristic measured semiconductor, an alternating-current voltage source, an electric potential measuring means and an impedance regulator wherein impedance is regulated by an impedance regulator in such a manner that electric potential at an electric potential measuring point of the characteristic measured semiconductor may become zero electric potential in the state in which light is not irradiated on the characteristic measured semiconductor by the light irradiating means. Electric characteristics of the characteristic measured semiconductor are measured based on measurement of electric potential obtained with or without irradiation of light onto the characteristic measured semiconductor. With this arrangement, semiconductor electric characteristics can be measured with high accuracy by a simple arrangement.Type: GrantFiled: August 25, 2005Date of Patent: August 11, 2009Assignee: National University Corporation Tokyo University of Agriculture and TechnologyInventors: Toshiyuki Samejima, Hajime Watakabe
-
Publication number: 20080018323Abstract: An apparatus for measuring electric characteristics of a semiconductor includes a light irradiating means for irradiating light to a characteristic measured semiconductor, an alternating-current voltage source, an electric potential measuring means and an impedance regulator wherein impedance is regulated by an impedance regulator in such a manner that electric potential at an electric potential measuring point of the characteristic measured semiconductor may become zero electric potential in the state in which light is not irradiated on the characteristic measured semiconductor by the light irradiating means. Electric characteristics of the characteristic measured semiconductor are measured based on measurement of electric potential obtained with or without irradiation of light onto the characteristic measured semiconductor. With this arrangement, semiconductor electric characteristics can be measured with high accuracy by a simple arrangement.Type: ApplicationFiled: August 25, 2005Publication date: January 24, 2008Inventors: Toshiyuki Samejima, Hajime Watakabe
-
Publication number: 20070291209Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P—CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.Type: ApplicationFiled: May 3, 2007Publication date: December 20, 2007Inventors: Sakae Tanaka, Toshiyuki Samejima
-
Publication number: 20070269936Abstract: The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.Type: ApplicationFiled: May 16, 2007Publication date: November 22, 2007Inventors: Sakae Tanaka, Toshiyuki Samejima