Patents by Inventor Tosiho Miyamoto
Tosiho Miyamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7119446Abstract: A semiconductor device is provided which includes a semiconductor element having power pads for supplying a power potential, ground pads for supplying a ground potential, and signal pads for inputting and outputting a signal, all of which are formed on one main surface thereof. Power bumps for outside connection are connected with the power pad by power wiring sections, ground bumps for outside connection are connected with the ground pad by ground wiring sections, and signal bumps for outside connection are connected with the signal pad by signal wiring sections. The power wiring sections or the ground wiring sections are respectively located adjacently on both sides of the signal wiring sections and the power wiring sections are respectively located adjacently on sides of the ground wiring sections.Type: GrantFiled: February 7, 2006Date of Patent: October 10, 2006Assignee: Hitachi, Ltd.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Publication number: 20060125078Abstract: A semiconductor device is provided which includes a semiconductor element having power pads for supplying a power potential, ground pads for supplying a ground potential, and signal pads for inputting and outputting a signal, all of which are formed on one main surface thereof. Power bumps for outside connection are connected with the power pad by power wiring sections, ground bumps for outside connection are connected with the ground pad by ground wiring sections, and signal bumps for outside connection are connected with the signal pad by signal wiring sections. The power wiring sections or the ground wiring sections are respectively located adjacently on both sides of the signal wiring sections and the power wiring sections are respectively located adjacently on sides of the ground wiring sections.Type: ApplicationFiled: February 7, 2006Publication date: June 15, 2006Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Patent number: 7030478Abstract: A semiconductor device including a semiconductor element having external terminals at a first level and external electrodes at a second level, higher than the first level. The external terminals include power terminals, ground terminals and signal terminals formed on a main surface of the semiconductor element. The external electrodes include power electrodes connected to the power terminals via power connecting sections, ground electrodes connected to the ground terminals via ground connecting sections and signal electrodes connected to the signal terminals via signal connecting sections. One of the signal terminals, signal electrodes and corresponding signal connecting sections are surrounded by either the power connecting sections connecting the power terminals and power electrodes or by the ground connection sections connecting the ground terminals and ground electrodes.Type: GrantFiled: April 19, 2005Date of Patent: April 18, 2006Assignee: Renesas Technology Corp.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Publication number: 20050184391Abstract: A semiconductor device including a semiconductor element having external terminals at a first level and external electrodes at a second level, higher than the first level. The external terminals include power terminals, ground terminals and signal terminals formed on a main surface of the semiconductor element. The external electrodes include power electrodes connected to the power terminals via power connecting sections, ground electrodes connected to the ground terminals via ground connecting sections and signal electrodes connected to the signal terminals via signal connecting sections. One of the signal terminals, signal electrodes and corresponding signal connecting sections are surrounded by either the power connecting sections connecting the power terminals and power electrodes or by the ground connection sections connecting the ground terminals and ground electrodes.Type: ApplicationFiled: April 19, 2005Publication date: August 25, 2005Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Patent number: 6882039Abstract: A semiconductor device including a semiconductor element having external terminals at a first level and external electrodes at a second level, higher than the first level. The external terminals include power terminals, ground terminals and signal terminals formed on a main surface of the semiconductor element. The external electrodes include power electrodes connected to the power terminals via power connecting sections, ground electrodes connected to the ground terminals via ground connecting sections and signal electrodes connected to the signal terminals via signal connecting sections. One of the signal terminals, signal electrodes and corresponding signal connecting sections are surrounded by either the power connecting sections connecting the power terminals and power electrodes or by the ground connection sections connecting the ground terminals and ground electrodes.Type: GrantFiled: August 3, 2004Date of Patent: April 19, 2005Assignee: Renesas Technology Corp.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Patent number: 6784533Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: GrantFiled: August 6, 2002Date of Patent: August 31, 2004Assignee: Renesas Technology Corp.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Patent number: 6531785Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: GrantFiled: November 20, 2001Date of Patent: March 11, 2003Assignee: Hitachi, Ltd.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Publication number: 20020190336Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: ApplicationFiled: August 6, 2002Publication date: December 19, 2002Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Publication number: 20020047179Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: ApplicationFiled: November 20, 2001Publication date: April 25, 2002Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Patent number: 6326699Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: GrantFiled: December 8, 2000Date of Patent: December 4, 2001Assignee: Hitachi, Ltd.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Publication number: 20010000116Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: ApplicationFiled: December 8, 2000Publication date: April 5, 2001Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura
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Patent number: 6211576Abstract: A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.Type: GrantFiled: September 17, 1999Date of Patent: April 3, 2001Assignee: Hitachi, Ltd.Inventors: Hiroya Shimizu, Asao Nishimura, Tosiho Miyamoto, Hideki Tanaka, Hideo Miura