Abstract: Silicon carbide (SiC) etchants with a generic formula of MXO2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO2 etchant. Typical metal in the formula MXO2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing.

Abstract: Silicon carbide (SiC) etchants with a generic formula of MXO2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO2 etchant. Typical metal in the formula MXO2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing.

Abstract: Contacts of an electrical device can be made of carbon nanotube columns. Contact tips can be disposed at ends of the columns. The contact tips can be made of an electrically conductive paste applied to the ends of the columns and cured (e.g., hardened). The paste can be applied, cured, and/or otherwise treated to make the contact tips in desired shapes. The carbon nanotube columns can be encapsulated in an elastic material that can impart the dominant mechanical characteristics, such as spring characteristics, to the contacts. The contacts can be electrically conductive and can be utilized to make pressure-based electrical connections with electrical terminals or other contact structures of another device.

Abstract: Carbon nanotube columns each comprising carbon nanotubes can be utilized as electrically conductive contact probes. The columns can be grown, and parameters of a process for growing the columns can be varied while the columns grow to vary mechanical characteristics of the columns along the growth length of the columns. Metal can then be deposited inside and/or on the outside of the columns, which can enhance the electrical conductivity of the columns. The metalized columns can be coupled to terminals of a wiring substrate. Contact tips can be formed at or attached to ends of the columns. The wiring substrate can be combined with other electronic components to form an electrical apparatus in which the carbon nanotube columns can function as contact probes.

Abstract: A technique for anchoring carbon nanotube columns to a substrate can include use of a filler material placed onto the surface of the substrate into area between the columns and surrounding a base portion of each of the columns.

Abstract: Contacts of an electrical device can be made of carbon nanotube columns. Contact tips can be disposed at ends of the columns. The contact tips can be made of an electrically conductive paste applied to the ends of the columns and cured (e.g., hardened). The paste can be applied, cured, and/or otherwise treated to make the contact tips in desired shapes. The carbon nanotube columns can be encapsulated in an elastic material that can impart the dominant mechanical characteristics, such as spring characteristics, to the contacts. The contacts can be electrically conductive and can be utilized to make pressure-based electrical connections with electrical terminals or other contact structures of another device.

Abstract: A composite spring contact structure includes a structural component and a conduction component distinct from each other and having differing mechanical and electrical characteristics. The structural component can include a group of carbon nanotubes. A mechanical characteristic of the composite spring contact structure can be dominated by a mechanical characteristic of the structural component, and an electrical characteristic of the composite spring contact structure can be dominated by an electrical characteristic of the conduction component. Composite spring contact structures can be used in probe cards and other electronic devices. Various ways of making contact structures are also disclosed.

Abstract: A technique for anchoring carbon nanotube columns to a substrate can include use of a filler material placed onto the surface of the substrate into area between the columns and surrounding a base portion of each of the columns.

Abstract: Carbon nanotube columns each comprising carbon nanotubes can be utilized as electrically conductive contact probes. The columns can be grown, and parameters of a process for growing the columns can be varied while the columns grow to vary mechanical characteristics of the columns along the growth length of the columns. Metal can then be deposited inside and/or on the outside of the columns, which can enhance the electrical conductivity of the columns. The metalized columns can be coupled to terminals of a wiring substrate. Contact tips can be formed at or attached to ends of the columns. The wiring substrate can be combined with other electronic components to form an electrical apparatus in which the carbon nanotube columns can function as contact probes.

Abstract: Systems and methods for depositing a plurality of droplets in a three-dimensional array are disclosed. The array can comprise a first type of droplets disposed to form a support structure and a second type of droplets forming a conductive seed layer on the support structure. A structure material can be electrodeposited onto the seed layer to create a three-dimensional structure.

Abstract: A composite spring contact structure includes a structural component and a conduction component distinct from each other and having differing mechanical and electrical characteristics. The structural component can include a group of carbon nanotubes. A mechanical characteristic of the composite spring contact structure can be dominated by a mechanical characteristic of the structural component, and an electrical characteristic of the composite spring contact structure can be dominated by an electrical characteristic of the conduction component. Composite spring contact structures can be used in probe cards and other electronic devices. Various ways of making contact structures are also disclosed.

Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercaptopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercatopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

Abstract: Probe array structures and methods of making probe array structures are disclosed. A plurality of electrically conductive elongate contact structures disposed on a first substrate can be provided. The contact structures can then be partially encased in a securing material such that ends of the contact structures extend from a surface of the securing material. The exposed portions of the contact structures can then be captured in a second substrate.

Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercaptopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

Abstract: Systems and methods for depositing a plurality of droplets in a three-dimensional array are disclosed. The array can comprise a first type of droplets disposed to form a support structure and a second type of droplets forming a conductive seed layer on the support structure. A structure material can be electrodeposited onto the seed layer to create a three-dimensional structure.

Abstract: A method for preparing a metal surface (34) for a soldering operation is provided. In accordance with the method, the metal surface is treated with a solder flux (31) comprising a supersaturated solution of a carboxylic acid.

Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercatopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercaptopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

Abstract: A probe cleaning apparatus for cleaning a probe tip use to test semiconductors dies having an abrasive substrate layer an a tacky gel layer on top of the abrasive surface of the abrasive substrate layer. The probe tip is cleaned by passing it through the tacky gel layer so that it comes in contact with the abrasive surface of the abrasive substrate, moving the probe tip across the abrasive surface of the substrate layer, and then removing the probe tip from the successive layers of the cleaning apparatus. The probe tip emerges from the cleaning apparatus free from debris associated with testing the semiconductor dies.