Abstract: A package device (10, 100) has one integrated circuit (22, 122) in a cavity (20, 120) in a package substrate (12, 122) and electrically coupled to one side (50, 150) of the package substrate. A second integrated circuit (32, 132) is mounted on another side of the package device and electrically coupled to that side as well. A third integrated circuit (38, 138) or more may be mounted on the second integrated circuit. Pads (16, 116, 116) useful for testing are present on both sides of the package substrate. The integrated circuits may be tested before final encapsulation to reduce the risk of providing completed packages with non-functional integrated circuits therein.

Abstract: A packaged semiconductor device (20) has a first integrated circuit die (28) having a top surface with active electrical circuitry implemented thereon. The first die (28) is mounted in a cavity (21) of a first heat spreader (22). A second die (36) having electrical circuitry implemented on a top surface is attached to the top surface of the first die (28). Both of the die (28 and 36) are electrically connected to a substrate (24) mounted on the first heat spreader (22). A second heat spreader (40) is mounted on the top surface of the second die (36). The second heat spreader (40) provides an additional path for thermal dissipation of heat generated by the second die (36).

Abstract: A package substrate (12, 52) has a first surface, a second surface opposite a first surface, and a cavity (22, 70) formed in the first surface that extends into the package substrate. The cavity has a cavity wall substantially perpendicular to the first and second surfaces. An integrated circuit die (20, 60) is placed in the cavity, and a conductive material (24, 72) is placed in the cavity to thermally couple an outer wall of the integrated circuit to the cavity wall. The conductive material improves the heat dissipation path between the integrated circuit die and the package substrate. The cavity may extend through the package substrate to the second surface such that the second surface of the package substrate is substantially coplanar to a surface of the integrated circuit die. An encapsulation layer (28, 78) may be formed over the conductive material, integrated circuit die, and at least a portion of the first surface of the package substrate.

Abstract: A package substrate (12, 52) has a first surface, a second surface opposite a first surface, and a cavity (22, 70) formed in the first surface that extends into the package substrate. The cavity has a cavity wall substantially perpendicular to the first and second surfaces. An integrated circuit die (20, 60) is placed in the cavity, and a conductive material (24, 72) is placed in the cavity to thermally couple an outer wall of the integrated circuit to the cavity wall. The conductive material improves the heat dissipation path between the integrated circuit die and the package substrate. The cavity may extend through the package substrate to the second surface such that the second surface of the package substrate is substantially coplanar to a surface of the integrated circuit die. An encapsulation layer (28, 78) may be formed over the conductive material, integrated circuit die, and at least a portion of the first surface of the package substrate.

Abstract: A packaged semiconductor device (20) has a first integrated circuit die (28) having a top surface with active electrical circuitry implemented thereon. The first die (28) is mounted in a cavity (21) of a first heat spreader (22). A second die (36) having electrical circuitry implemented on a top surface is attached to the top surface of the first die (28). Both of the die (28 and 36) are electrically connected to a substrate (24) mounted on the first heat spreader (22). A second heat spreader (40) is mounted on the top surface of the second die (36). The second heat spreader (40) provides an additional path for thermal dissipation of heat generated by the second die (36).

Abstract: A package device (10, 100) has one integrated circuit (22, 122) in a cavity (20, 120) in a package substrate (12. 122) and electrically coupled to one side (50, 150) of the package substrate. A second integrated circuit (32, 132) is mounted on another side of the package device and electrically coupled to that side as well. A third integrated circuit (38, 138) or more may be mounted on the second integrated circuit. Pads (16, 116, 116) useful for testing are present on both sides of the package substrate. The integrated circuits may be tested before final encapsulation to reduce the risk of providing completed packages with non-functional integrated circuits therein.

Abstract: A semiconductor device and its method of formation are disclosed wherein a first semiconductor substrate (20) and a second semiconductor substrate (21) are encapsulated in a no lead package (100). In some embodiments, a plurality of off die bond pads (30) is coupled to at least one of the first and second semiconductor substrates (20, 21). In some embodiments, the first semiconductor substrate (20) has a backside (40) which remains exposed after encapsulation.