Abstract: A temperature controlled source cell for use in the practice of thin film depositions by molecular beam epitaxy is described which includes an optical sensor for monitoring source temperature, the sensor including a light pipe having one end near the source and the other end coupled to a fiber optic probe which carries light from the light pipe to a remote optical detector.

Abstract: Thin films of solid lubricious metal chalcogenides, such as MoS.sub.2, are grown on stainless steel substrates by pulsed laser evaporation (P.L.E.). X-ray photoelectron spectroscopy of PLE deposited MoS.sub.2 films grown at substrate temperatures up to 300.degree. C. have the same stoichiometry as bulk MoS.sub.2. MoS.sub.2 PLE deposited films grown at 450.degree. C. are sulfur rich. These laser-deposited films have a granular structure and exhibit none of the dendritic structures typically observed in sputter-deposited films. The coefficients of friction of PLE films were measured in laboratory air and ranged from 0.09-0.25; the majority of values were between 0.16 and 0.20. These frictional coefficients are in the appropriate range for a solid lubricant.

Abstract: A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C60, and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The crucibles are installed into first and second effusion cells which are placed within the MBE growth chamber. A substrate is prepared by cleaning and polishing and loaded into the MBE growth chamber. The substrate and effusion cells are heated and a layer of SiC is grown by MBE onto the substrate.