Patents by Inventor Troy A. Giniecki

Troy A. Giniecki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrogenated silicon carbide as a liner for self-aligning contact vias
    Patent number: 6362094
    Abstract: The present invention provides a method of fabricating a self-aligning contact opening comprising: (a) forming a dielectric layer over a semiconductor substrate and gate electrodes located on the semiconductor substrate, (b) forming a carbide liner over the dielectric layer, and (c) etching at least a portion the carbide liner to form a self-aligning contact opening between the gate electrodes.
    Type: Grant
    Filed: August 16, 2000
    Date of Patent: March 26, 2002
    Assignee: Agere Systems Guardian Corp.
    Inventors: Gary Dabbaugh, Gerald W. Gibson, Jr., Troy A. Giniecki, Kurt G. Steiner
  • Shallow trench isolation method
    Patent number: 6191001
    Abstract: A method of manufacturing a semiconductor device using shallow trench isolation is provided, wherein a plurality of protrusions are formed in the exposed surface of the mask layer overlying the active area of the device. The protrusions are preferably formed by forming a photo-resist layer on the surface of the mask layer and patterning the photo-resist layer such that the photo-resist layer defines a plurality of protrusion areas and a depression area within the defined active area. A portion of the mask layer is removed in the defined depression area to form a plurality of protrusions in the mask layer. Thereafter, a dielectric layer is deposited on the exposed surface of the mask layer and in the shallow trench and evenly planarized.
    Type: Grant
    Filed: August 25, 1999
    Date of Patent: February 20, 2001
    Assignee: Lucent Technologies, Inc.
    Inventors: Alan Sangone Chen, Seungmoo Choi, Donald Thomas Cwynar, Timothy Edward Doyle, Troy A. Giniecki
  • Method for tapered etching
    Patent number: 4919748
    Abstract: A method for etching metal layers including aluminum to create tapered sidewalls is disclosed. The method features the use of trifluoromethane and chlorine in controlled amounts to create a tapered metal layer profile.
    Type: Grant
    Filed: June 30, 1989
    Date of Patent: April 24, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: Craig N. Bredbenner, Troy A. Giniecki, Nur Selamoglu, Hans J. Stocker